Issue 25, 2012
From the journal:

Journal of Materials Chemistry

A single Alq3 submicro-wire Schottky diode and its negative differential resistance

Shih-Shou Lo,*a   Wei-Hsiu Hsu,a   Shu-Hao Siea  and  Hoang-Jyh Leub  

* Corresponding authors

a Department of Photonics, Feng-Chia University, No. 100, Wehhwa Rd., Seatwen Area, Taichung, Taiwan, R.O.C
E-mail: sslo@fcu.edu.tw
Fax: +886-4-24510182
Tel: +886-4-24517250 extn 5041

b Department of Fiber and Composite Materials, Feng-Chia University, No. 100, Wehhwa Rd., Seatwen Area, Taichung, Taiwan, R.O.C

Abstract

This study fabricated high-quality tris(8-hydroxyquinoline) aluminium (Alq3) submicro-wires as well as a Schottky diode with a single Alq3 submicro-wire across Ag electrodes. Rectifying and negative differential resistance (NDR) of the fabricated diode was obtained and the turn-on voltage and breakdown voltage was 4 V and 12 V, respectively. The NDR of the diode was observed when the forward bias exceeded 4 V and the peak-to-valley ratio in the current was more than 6 : 1 at room temperature. The mechanism of NDR in the Schottky diode was discussed. These results may facilitate applying Alq3 submicro-wires for advanced organic/inorganic hybrid nanostructure devices.

Graphical abstract: A single Alq3 submicro-wire Schottky diode and its negative differential resistance

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Article information

DOI
https://doi.org/10.1039/C2JM16102H
Article type
Paper
Submitted
23 Nov 2011
Accepted
18 Apr 2012
First published
22 May 2012

J. Mater. Chem., 2012,22, 12618-12621

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A single Alq3 submicro-wire Schottky diode and its negative differential resistance

S. Lo, W. Hsu, S. Sie and H. Leu, J. Mater. Chem., 2012, 22, 12618 DOI: 10.1039/C2JM16102H

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