Issue 39, 2016

Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites

Abstract

Organic–inorganic hybrid perovskites have unique electronic properties in which deep level defects are rarely formed. This unique defect characteristic is the source of the long carrier diffusion length. This theoretical study shows what causes this characteristic formation of shallow level defects in lead tri-halide perovskites. Comparative studies between iodides and other halides showed that deep level defect states were generated for Cl based perovskites. Longer Pb–halide bond lengths and narrower band gaps are beneficial for preventing deep level defect states. Additionally, our study shows that the formation of shallow level defects does not change even when the lattice structures of the perovskites do not reach their equilibrium structures.

Graphical abstract: Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites

Supplementary files

Article information

Article type
Paper
Submitted
29 apr 2016
Accepted
01 sep 2016
First published
02 sep 2016

Phys. Chem. Chem. Phys., 2016,18, 27143-27147

Understanding of the formation of shallow level defects from the intrinsic defects of lead tri-halide perovskites

J. Kim, C. Chung and K. Hong, Phys. Chem. Chem. Phys., 2016, 18, 27143 DOI: 10.1039/C6CP02886A

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