Maps of reaction rate constants across all surface orientations vicinal to Cu(111) reveal that D-tartaric acid decomposes preferentially on Cu(hkl)S surfaces while L-tartaric acid decomposes preferentially on Cu(hkl)R orientations.
Al addition modifies the interfacial energy of SiC/solution during the growth of SiC single crystals via TSSG, and is beneficial to smoothing the growth surface, improving the crystalline quality, stabilizing the 4H polytype, and increasing the growth rate.
Surface kinetics in Al-rich AlGaN growth are regulated to realize a growth window allowing a higher rate as well as a lower temperature. Hence a rate of 2.3 μm h−1 at 1050 °C is achieved for n-Al0.55Ga0.45N with the typical step-terrace morphology.
This study explored the epitaxial growth of 4H-SiC under various source gas flow rates, growth pressures, and pre-etching times, and their effects on growth rate, thickness uniformity, doping concentration and uniformity, and surface roughness.
This highlight presents advances in computational studies for epitaxial crystal growth of nitride semiconductors, showcasing case studies that reveal realistic reconstructions of GaN(0001) and AlN(0001) surfaces.