Issue 13, 2024

Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector

Abstract

The structure and process of the graphene/Si heterojunction near-infrared photodetector were optimized to enhance the operating speed limit. The introduction of a well-designed structure improved the rise time from 12.6 μs to 115 ns, albeit at the expense of the responsivity, which decreased from 1.25 A W−1 to 0.56 A W−1. Similarly, the falling time was improved from 38 μs to 288 ns with a sacrifice in responsivity from 1.25 A W−1 to 0.29 A W−1, achieved through the introduction of Ge-induced defect-recombination centers within the well. Through a judicious well design and the introduction of recombination defect centers, the minimum pulse width could be improved from 50.6 μs to 435 ns, facilitating 2 MHz operation. This represents more than 100 times increase compared to previously reported graphene and graphene/Si hybrid photodetectors.

Graphical abstract: Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector

Supplementary files

Article information

Article type
Paper
Submitted
04 apr 2024
Accepted
18 mai 2024
First published
20 mai 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2024,6, 3391-3398

Demonstration of a low power and high-speed graphene/silicon heterojunction near-infrared photodetector

M. G. Kwon, C. Kim, S. Kim, T. J. Yoo, Y. Lee, H. J. Hwang, S. Lee and B. H. Lee, Nanoscale Adv., 2024, 6, 3391 DOI: 10.1039/D4NA00286E

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