Issue 15, 2016
From the journal:

Nanoscale

Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals†

Arzu Angı,a   Regina Sinelnikov,b   Al Meldrum,c   Jonathan G. C. Veinot,b   Isacc Balberg,d   Doron Azulay,d   Oded Millo*d  and  Bernhard Rieger*a  

* Corresponding authors

a WACKER-Lehrstuhl für Makromolekulare Chemie, Technische Universität München, Lichtenbergstrasse 4, 85747 Garching, Germany
E-mail: rieger@tum.de

b Department of Chemistry, University of Alberta, 11227 Saskatchewan Drive, Edmonton, Alberta, Canada T6G 2G2

c Department of Physics, University of Alberta, Edmonton, Alberta T6G 2G2, Canada

d Racah Institute of Physics, The Hebrew University of Jerusalem, Jerusalem 91904, Israel
E-mail: milode@mail.huji.ac.il

Abstract

Optoelectronic properties of Si nanocrystals (SiNCs) were studied by combining scanning tunneling spectroscopy (STS) and optical measurements. The photoluminescence (PL) of phenylacetylene functionalized SiNCs red shifts relative to hexyl- and phenyl-capped counterparts, whereas the absorption spectra and the band gaps extracted from STS are similar for all surface groups. However, an in-gap state near the conduction band edge was detected by STS only for the phenylacetylene terminated SiNCs, which can account for the PL shift via relaxation across this state.

Graphical abstract: Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

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Article information

DOI
https://doi.org/10.1039/C6NR01435F
Article type
Communication
Submitted
19 feb 2016
Accepted
16 mar 2016
First published
17 mar 2016
This article is Open Access
Creative Commons BY-NC license

Nanoscale, 2016,8, 7849-7853

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Photoluminescence through in-gap states in phenylacetylene functionalized silicon nanocrystals

A. Angı, R. Sinelnikov, A. Meldrum, J. G. C. Veinot, I. Balberg, D. Azulay, O. Millo and B. Rieger, Nanoscale, 2016, 8, 7849 DOI: 10.1039/C6NR01435F

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