Revealing the effect of substitutional cation doping in the A-site of nanoscale APbI3 perovskite layers for enhanced retention and endurance in optoelectronic resistive switching for non-volatile bipolar memory devices

Twinkle George and Arumugam Vadivel Murugan

Nanoscale, 2023, 15, 6960
DOI: 10.1039/D2NR07007C

Highly stable two-dimensional Ruddlesden–Popper perovskite-based resistive switching memory devices

Milon Kundar, Koushik Gayen, Rajeev Ray, Dushyant Kushavah and Suman Kalyan Pal

Nanoscale, 2024, 16, 16159
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A solution-processable benzothiazole-substituted formazanate zinc(ii) complex designed for a robust resistive memory device

Sunita Birara, Shalu Saini, Moumita Majumder, Shree Prakash Tiwari and Ramesh K. Metre

Dalton Trans., 2024, 53, 15338
DOI: 10.1039/D4DT01640H

Polymer-enhanced perovskite oxide-based photocatalysts: a review

Gregory Soon How Thien, Kah-Yoong Chan, Ab Rahman Marlinda and Boon Kar Yap

Nanoscale, 2023, 15, 19039
DOI: 10.1039/D3NR03874B

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Michalis Loizos, Konstantinos Rogdakis, Weifan Luo, Paul Zimmermann, Alexander Hinderhofer, Jovan Lukić, Marinos Tountas, Frank Schreiber, Jovana V. Milić and Emmanuel Kymakis

Nanoscale Horiz., 2024, 9, 1146
DOI: 10.1039/D4NH00104D

Unlocking the resistive switching in Acacia Senegal-based electrolyte for neuromorphic computation

Aziz Lokhandwala, Parth Thakkar, Jeny Gosai, Suvik Oza and Ankur Solanki

J. Mater. Chem. C, 2024, 12, 2173
DOI: 10.1039/D3TC03451H

Principles, fabrication, and applications of halide perovskites‐based memristors

Xiaozhe Cheng, Zhitao Dou, Hong Lian, Zhitao Qin, Hongen Guo, Xifeng Li, Wai‐Yeung Wong and Qingchen Dong

FlexMat, 2024, 1, 127
DOI: 10.1002/flm2.25

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications

Bixin Li, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang and Junliang Yang

Advanced Science, 2024, 11
DOI: 10.1002/advs.202310263

Performance Regulation of a ZnO/WOx-Based Memristor and Its Application in an Emotion Circuit

Xizi Qin, Junda Hu, Hao Liu, Xin Xu, Feng Yang, Bai Sun, Yong Zhao, Mei Huang and Yong Zhang

J. Phys. Chem. Lett., 2023, 14, 3039
DOI: 10.1021/acs.jpclett.3c00063

2D and Quasi-2D Halide Perovskite-Based Resistive Switching Memory Systems

Hyojung Kim, Daijoon Hyun, Muhammad Hilal, Zhicheng Cai and Cheon Woo Moon

Electronics, 2024, 13, 3572
DOI: 10.3390/electronics13173572

One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing

Pan‐Ke Zhou, Yiping Li, Tao Zeng, Mun Yin Chee, Yuxing Huang, Ziyue Yu, Hongling Yu, Hong Yu, Weiguo Huang and Xiong Chen

Angew Chem Int Ed, 2024, 63
DOI: 10.1002/anie.202402911

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Jianghua Xu, Jianping Xu, Shaobo Shi, Weihao Bian, Jing Chen, Songyao Gao, Xue Zhou, Lina Kong, Xiaosong Zhang and Lan Li

Journal of Alloys and Compounds, 2023, 968, 171886
DOI: 10.1016/j.jallcom.2023.171886

Optoelectronic synaptic properties of Y-doped HfO2 ferroelectric memristor for neuromorphic computing

Zhi-Liang Tong, Yan-Pin Jiang, Min-Huang, Xin-Gui Tang, Zhen-Hua Tang, Xiao-Bin Guo, Wen-Hua Li and Yi-Chun Zhou

Physica B: Condensed Matter, 2025, 714, 417412
DOI: 10.1016/j.physb.2025.417412

One‐Dimensional Covalent Organic Framework‐Based Multilevel Memristors for Neuromorphic Computing

Pan‐Ke Zhou, Yiping Li, Tao Zeng, Mun Yin Chee, Yuxing Huang, Ziyue Yu, Hongling Yu, Hong Yu, Weiguo Huang and Xiong Chen

Angewandte Chemie, 2024, 136
DOI: 10.1002/ange.202402911

Scanning Tunneling Microscopy Investigation of Synaptic Behavior in AgInS2 Quantum Dots: Effect of Ion Transport in Neuromorphic Applications

Atanu Betal, Anupam Chetia, Jayanta Bera, Dibyajyoti Saikia, Ashish Sharma, Arup K. Rath and Satyajit Sahu

ACS Appl. Nano Mater., 2024, 7, 7226
DOI: 10.1021/acsanm.3c06272

Active polymer-based halide perovskites for light-driven applications: A review

Gregory Soon How Thien, Kah-Yoong Chan, Ab Rahman Marlinda, Mohd Arif Mohd Sarjidan, Wan Haliza Abd Majid and Boon Kar Yap

Applied Surface Science Advances, 2024, 19, 100538
DOI: 10.1016/j.apsadv.2023.100538

Stable Halide Perovskite Memristor Utilizing Innovative Silver/Bismuth Electrode as an Alternative to Gold

Jiuchao Feng, Yanwei Fan, Yue Wang, Qing Song, Yang Liu, Yonghua Chen, Deli Li and Wei Huang

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202420547

Electro-Optically Tunable Passivated Double-Cation Perovskite-Based ReRAM for Low-Power Memory Applications

Manvendra Chauhan, Ranbir Singh and Satinder K. Sharma

ACS Appl. Electron. Mater., 2024, 6, 2709
DOI: 10.1021/acsaelm.4c00257

A carbon electrode approach for TiO2-write-once-read-many resistive memories

Gregory Soon How Thien, Azfar Razif Azlan Razif, Abdelrahman Hamed Ebrahem Abdelhamed, Chu-Liang Lee, Lini Lee, Wai-Leong Pang, Akella Sivaramakrishna, Ramesh Thamankar, Natarajan Rajasekar and Kah-Yoong Chan

Materials Science in Semiconductor Processing, 2024, 184, 108839
DOI: 10.1016/j.mssp.2024.108839

Nonvolatile resistive switching in interface-dominated memristors utilizing two-dimensional Cs2Pb(SCN)2Br2 perovskite films

Jia Xu, Yu Zhang, Ying Ding, Yuhua Gong and Jianxi Yao

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0196160