Recent progress of optoelectronic applications based on 2D WSe2 nanomaterials and heterostructures: a review
Abstract
Tungsten diselenide (WSe2) is extensively investigated as a channel optoelectrode material with remarkable optical, electrical, and magnetic properties and mechanical flexibility. Due to the high absorption coefficient, high switch ratio, exceptional quantum yield and adjustable direct band gap, nano-WSe2-based devices are well suitable for the fabrication of high-speed optoelectronic devices and are also possible candidates for nanoelectronics and flexible electronic applications. Considering the rapidly growing research enthusiasm on this topic over the past several years, here the recent progress in various optical and electrical devices of two-dimensional (2D) WSe2 nanomaterials and heterostructures, including sensors, photodetectors, light-emitting diodes (LEDs), memory devices and field effect transistors (FETs), is reviewed. In addition, the challenges and prospects for the future research direction of 2D WSe2 in the optoelectrical field are proposed which will provide new perspectives to facilitate the development of 2D nanomaterial-based optoelectronic applications.
- This article is part of the themed collection: Journal of Materials Chemistry C Recent Review Articles