Issue 46, 2022

Decoupling the metal–insulator transition temperature and hysteresis of VO2 using Ge alloying and oxygen vacancies

Abstract

The metal-to-insulator transition of VO2 underpins applications in thermochromics, neuromorphic computing, and infrared vision. Ge alloying is shown to elevate the transition temperature by promoting V–V dimerization, thereby expanding the stability of the monoclinic phase to higher temperatures. By suppressing the propensity for oxygen vacancy formation, Ge alloying renders the hysteresis of the transition exquisitely sensitive to oxygen stoichiometry.

Graphical abstract: Decoupling the metal–insulator transition temperature and hysteresis of VO2 using Ge alloying and oxygen vacancies

Supplementary files

Article information

Article type
Communication
Submitted
20 မတ် 2022
Accepted
09 မေ 2022
First published
10 မေ 2022

Chem. Commun., 2022,58, 6586-6589

Author version available

Decoupling the metal–insulator transition temperature and hysteresis of VO2 using Ge alloying and oxygen vacancies

P. Schofield, E. J. Braham, B. Zhang, J. L. Andrews, H. K. Drozdick, D. Zhao, W. Zaheer, R. M. Gurrola, K. Xie, P. J. Shamberger, X. Qian and S. Banerjee, Chem. Commun., 2022, 58, 6586 DOI: 10.1039/D2CC01599D

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements