Issue 7, 2016

The effect of indium substitution on the structure and NLO properties of Ba6Cs2Ga10Se20Cl4

Abstract

The nonlinear optical (NLO) susceptibility and laser induced damage threshold (LIDT) of a material are two inversely correlated indicators of the NLO performance. Here two new NLO active indium substituted chalcohalides, Ba6Cs2InxGa10−xSe20Cl4 (x = 2, 1; x = 1, 2) possessing a T1–T2 supertetrahedron anionic framework structure, have been successfully synthesized by solid-state reactions. Unlike the transition metal, the indium substitutes gallium at both T1 and T2 sites according to a series of single crystal diffraction data. Property measurements on the polycrystalline samples reveal that such a substitution improves the crystallinity and LIDT without adversely affecting the SHG power if compared with the transition metal substitution. Consequently, the title compounds show an optimal NLO performance among the compounds of this type of structure obtained so far.

Introduction to the international collaboration

The collaboration between Fujian Institute of Research on the Structure of Matter (FJIRSM: Ling Chen) and Paul Scherrer Institute (PSI: Meitian Wang) started back in 1993 when they were master's degree students in the Chemistry Department, Beijing Normal University, and jointly worked on the project of rare earth metal iodides with low valence states focusing on solid-state syntheses, crystal structures and theoretical analyses (L. Chen, M. T. Wang, S. H. Wang, Synthesis and structure of new iodides Cs4EuI6 and Rb4EuI6, J. Alloys Comp. 1997, 256, 112–114.). Since then, the cooperation continued when they were scattered in Alberta University in Canada, and Iowa State University in USA. No matter where they were, their cooperation has never been interrupted. This work is their second joint publication.

Graphical abstract: The effect of indium substitution on the structure and NLO properties of Ba6Cs2Ga10Se20Cl4

Supplementary files

Article information

Article type
Research Article
Submitted
25 ဧပြီ 2016
Accepted
25 မေ 2016
First published
27 မေ 2016

Inorg. Chem. Front., 2016,3, 952-958

The effect of indium substitution on the structure and NLO properties of Ba6Cs2Ga10Se20Cl4

Y. Li, P. Liu, H. Lin, M. Wang and L. Chen, Inorg. Chem. Front., 2016, 3, 952 DOI: 10.1039/C6QI00104A

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