Cross Reference Logo
Citations to this article as recorded by CrossRef and RSC Journals (149 citations).

In situ vulcanization synthesis of CuInS2 nanosheet arrays for a memristor with a high on–off ratio and low power consumption
Zijun Hu, Fa Cao, Tingting Yan, Li Su and Xiaosheng Fang
J. Mater. Chem. C, 2023, 11, 244
DOI: 10.1039/D2TC04003D

Recent advances in flexible memristors for advanced computing and sensing
Jiaming Xu, Ziwang Luo, Long Chen, Xuhui Zhou, Haozhe Zhang, Yuanjin Zheng and Lei Wei
Mater. Horiz., 2024, 11, 4015
DOI: 10.1039/D4MH00291A

A carbon-based memristor design for associative learning activities and neuromorphic computing
Yifei Pei, Zhenyu Zhou, Andy Paul Chen, Jingsheng Chen and Xiaobing Yan
Nanoscale, 2020, 12, 13531
DOI: 10.1039/D0NR02894K

Neuromorphic devices for electronic skin applications
Chandrashekhar S. Patil, Sourabh B. Ghode, Jungmin Kim, Girish U. Kamble, Somnath S. Kundale, Abdul Mannan, Youngbin Ko, Muhammad Noman, Qazi Muhammad Saqib, Swapnil R. Patil, Seo Yeong Bae, Jin Hyeok Kim, Jun Hong Park and Jinho Bae
Mater. Horiz., 2025, 12, 2045
DOI: 10.1039/D4MH01848F

‘Stateful’ threshold switching for neuromorphic learning
Zhijian Zhong, Zhiguo Jiang, Jianning Huang, Fangliang Gao, Wei Hu, Yong Zhang and Xinman Chen
Nanoscale, 2022, 14, 5010
DOI: 10.1039/D1NR05502J

The tunable interface charge transfer by polarization in two dimensional polar Al2O3/MoSO heterostructures
Xinli Wang, Juping Xu, Peng-Fei Liu, Bao-Tian Wang and Wen Yin
J. Mater. Chem. A, 2023, 11, 10628
DOI: 10.1039/D3TA01479G

Adapted MLP-Mixer network based on crossbar arrays of fast and multilevel switching (Co–Fe–B)x(LiNbO3)100−x nanocomposite memristors
Aleksandr I. Iliasov, Anna N. Matsukatova, Andrey V. Emelyanov, Pavel S. Slepov, Kristina E. Nikiruy and Vladimir V. Rylkov
Nanoscale Horiz., 2024, 9, 238
DOI: 10.1039/D3NH00421J

Promising functional two-dimensional lamellar metal thiophosphates: synthesis strategies, properties and applications
Min Zhu, Huari Kou, Ke Wang, Hu Wu, Dawei Ding, Guijiang Zhou and Shujiang Ding
Mater. Horiz., 2020, 7, 3131
DOI: 10.1039/D0MH00802H

A wafer-scale synthesis of monolayer MoS2 and their field-effect transistors toward practical applications
Yuchun Liu and Fuxing Gu
Nanoscale Adv., 2021, 3, 2117
DOI: 10.1039/D0NA01043J

Evolution of low-dimensional material-based field-effect transistors
Waqas Ahmad, Youning Gong, Ghulam Abbas, Karim Khan, Maaz Khan, Ghafar Ali, Ahmed Shuja, Ayesha Khan Tareen, Qasim Khan and Delong Li
Nanoscale, 2021, 13, 5162
DOI: 10.1039/D0NR07548E

Resistive switching memory from dielectric lignin for sustainable electronics
Sebastiano De Stefano, Ofelia Durante, Rosarita D’Orsi, Alessandra Operamolla, Marianna Ambrico, Paolo Francesco Ambrico, Nadia Martucciello, Filippo Giubileo and Antonio Di Bartolomeo
J. Mater. Chem. C, 2024, 12, 13621
DOI: 10.1039/D4TC02229G

Novel charm of 2D materials engineering in memristor: when electronics encounter layered morphology
Saima Batool, Muhammad Idrees, Shi-Rui Zhang, Su-Ting Han and Ye Zhou
Nanoscale Horiz., 2022, 7, 480
DOI: 10.1039/D2NH00031H

Surface group-governed charge storage in carbon dots for a visual memristor
Dongren Zheng, Tianyang Zhang, Haizhou Yu, Xiangyong Meng, Zhongshan Yang, Hui Huang, Yang Liu and Zhenhui Kang
Mater. Horiz., 2026, 13, 2958
DOI: 10.1039/D5MH02204E

Memristors based on carbon dots for learning activities in artificial biosynapse applications
Xiaoyu Li, Yifei Pei, Ying Zhao, Haoqiang Song, Jianhui Zhao, Lei Yan, Hui He, Siyu Lu and Xiaobing Yan
Mater. Chem. Front., 2022, 6, 1098
DOI: 10.1039/D2QM00151A

Solvent-assisted sulfur vacancy engineering method in MoS2 for a neuromorphic synaptic memristor
Jiyeon Kim, Changik Im, Chan Lee, Jinwoo Hwang, Hyoik Jang, Jae Hak Lee, Minho Jin, Haeyeon Lee, Junyoung Kim, Junho Sung, Youn Sang Kim and Eunho Lee
Nanoscale Horiz., 2023, 8, 1417
DOI: 10.1039/D3NH00201B

Characteristics, properties, synthesis and advanced applications of 2D graphdiyne versus graphene
Ying Zhao, Luxiao Chai, Xiaobing Yan, Weichun Huang, Taojian Fan, Omar A. Al-Hartomy, Ahmed Al-Ghamdi, Swelm Wageh, Abdullah G. Al-Sehemi, Zhongjian Xie and Han Zhang
Mater. Chem. Front., 2022, 6, 528
DOI: 10.1039/D1QM01342D

Highly Improved Performance in Ag-Doped BSA Films by Inserting the ZrO₂ Layer for Nonvolatile Resistive Switching Memory
Hongwei Wang, Chao Gao, Kaixuan Sun, Chenyang Shi and Xiaobing Yan
IEEE Trans. Electron Devices, 2021, 68, 510
DOI: 10.1109/TED.2020.3040208

Understanding and predicting trends in adsorption energetics on monolayer transition metal dichalcogenides
Brian H. Lee, Jameela Fatheema, Deji Akinwande and Wennie Wang
npj 2D Mater Appl, 2025, 9
DOI: 10.1038/s41699-025-00579-9

Multi-Level Neuromorphic Devices Built on Emerging Ferroic Materials: A Review
Cheng Wang, Amogh Agrawal, Eunseon Yu and Kaushik Roy
Front. Neurosci., 2021, 15
DOI: 10.3389/fnins.2021.661667

2D Material‐Based Bioinspired Devices for Neuromorphic Computing
Chenguang Zhu, Guangcheng Wu, Xingxia Sun, Jiali Yi, Tanghao Xie, Huawei Liu, Dong Li and Anlian Pan
Small, 2025
DOI: 10.1002/smll.202504118

Tunable Electronic and Optoelectronic Properties of MoS2 Through Molecular Coverage‐Controlled Polyoxometalate Doping
Jean‐Pierre Glauber, Marco Moors, Dmitry A. Ryndyk, Emad Najafidehaghani, Jonas Lorenz, Rahel‐Manuela Maas, Nils Boysen, Harish Parala, Thomas Heine, Anjana Devi and Kirill Monakhov
Adv Elect Materials, 2026, 12
DOI: 10.1002/aelm.202500706

Revealing switching statistics and artificial synaptic properties of Bi2S3 memristor
Priya Terdalkar, Dhananjay D. Kumbhar, Somnath D. Pawar, Kiran A. Nirmal, Tae Geun Kim, Shaibal Mukherjee, Kishorkumar V. Khot and Tukaram D. Dongale
Solid-State Electronics, 2025, 225, 109076
DOI: 10.1016/j.sse.2025.109076

A Low-Voltage Solution-Processed Organic Small Molecule Memristor Based on TIPS Pentacene
Nikhitha Rajan, Indranil Maity, Samayun Saikh and Ayash Kanto Mukherjee
ACS Appl. Electron. Mater., 2025, 7, 779
DOI: 10.1021/acsaelm.4c01921

Molybdenum Disulfide Memristors for Next Generation Memory and Neuromorphic Computing: Progress and Prospects
R. A. Wells and A. W. Robertson
Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202400121

Van der Waals Heterostructures for Photoelectric, Memory, and Neural Network Applications
Hang Xu, Yue Xue, Zhenqi Liu, Qing Tang, Tianyi Wang, Xichan Gao, Yaping Qi, Yong P. Chen, Chunlan Ma and Yucheng Jiang
Small Science, 2024, 4
DOI: 10.1002/smsc.202300213

Ferroelectric ferrite/MXene controlled graphene based free-standing memory devices for multifunctional non-volatile data storage
Lazare Kindohoun, Kubra Sattar, Nayab Gul, Syed Irfan, Yu Guoqiang and Syed Rizwan
Journal of Alloys and Compounds, 2025, 1038, 182786
DOI: 10.1016/j.jallcom.2025.182786

2D Material‐Based Memristor Arrays for Flexible and Thermally Stable Neuromorphic Applications
Seunghyeon Ji, Jeongkeun Kim, Juyeong Hong, Jonggyu Choi, Seokmin Yun, Ajit Kumar Katiyar, Frank Niklaus and Jong‐Hyun Ahn
Small, 2025
DOI: 10.1002/smll.202507845

Multielement 2D layered material photodetectors
Jiandong Yao and Guowei Yang
Nanotechnology, 2021, 32, 392001
DOI: 10.1088/1361-6528/ac0a16

Advancements in flexible memristors for neuromorphic computing: Materials, mechanisms, and applications in synaptic emulation
Weiwei Li, Chunbo Duan, Ying Wei and Hui Xu
FlexMat, 2025, 2, 390
DOI: 10.1002/flm2.70012

Free-Standing Multilayer Molybdenum Disulfide Memristor for Brain-Inspired Neuromorphic Applications
Amin Abnavi, Ribwar Ahmadi, Amirhossein Hasani, Mirette Fawzy, Mohammad Reza Mohammadzadeh, Thushani De Silva, Niannian Yu and Michael M. Adachi
ACS Appl. Mater. Interfaces, 2021, 13, 45843
DOI: 10.1021/acsami.1c11359

Nano Horizons: Exploring the untapped power of two-Dimensional materials
Junyoung Kim, Anuj Kumar, Sanket D. Bhoyate, Jinwoo Hwang, Hyoik Jang, Chaitanya Mahajan, Eunho Lee and Ram K. Gupta
Materials Science and Engineering: B, 2024, 310, 117673
DOI: 10.1016/j.mseb.2024.117673

Emerging two‐dimensional bismuth oxychalcogenides for electronics and optoelectronics
Fakun Wang, Sijie Yang, Jie Wu, Xiaozong Hu, Yuan Li, Huiqiao Li, Xitao Liu, Junhua Luo and Tianyou Zhai
InfoMat, 2021, 3, 1251
DOI: 10.1002/inf2.12215

Memristor based on two-dimensional titania nanosheets for multi-level storage and information processing
Gang Cao, Chao Gao, Jingjuan Wang, Jinling Lan and Xiaobing Yan
Nano Res., 2022, 15, 8419
DOI: 10.1007/s12274-022-4437-9

Synthesis of Amorphous‐Crystalline Mixture Boron Nitride for Balanced Resistive Switching Operation
Kyung Jin Ahn, Do Kyeong Yun, Mi Hyang Park, Hong Woon Yun, Minh Chien Nguyen, Van Tu Vu, Huamin Li, Pallavi Aggarwal and Woo Jong Yu
Small, 2025
DOI: 10.1002/smll.202503877

Growth of out-of-plane standing MoTe2(1-x)Se2x/MoSe2 composite flake films by sol–gel nucleation of MoOy and isothermal closed space telluro-selenization
A. Fernández García, V. Torres-Costa, O. de Melo, F. Agulló-Rueda, G.R. Castro and M. Manso Silvan
Applied Surface Science, 2021, 546, 149076
DOI: 10.1016/j.apsusc.2021.149076

Advances in two-dimensional heterojunction for sophisticated memristors
Shiwei Qin, Ye Tao, Ting Hu, Shaojie Zhang, Chenying Feng, Lin Lv, Guokun Ma, Yiheng Rao, Liangping Shen, Houzhao Wan and Hao Wang
Materials Today Physics, 2024, 41, 101336
DOI: 10.1016/j.mtphys.2024.101336

Memristive Effect in Ti3C2Tx (MXene) Polyelectrolyte Multilayers
Aleksandr Aglikov, Olga Volkova, Anna Bondar, Ivan Moskalenko, Alexander Novikov, Ekaterina V. Skorb and Evgeny Smirnov
ChemPhysChem, 2023, 24
DOI: 10.1002/cphc.202300187

Planar memristor and artificial synaptic simulating based on two-dimensional layered tungsten oxychloride WO2Cl2
Shuang Zhou, Yu Xing, Qingxu Xu, Qingyu Yan, Ping Liu, Lujun Wei, Wei Niu, Feng Li, Lu You and Yong Pu
Applied Physics Letters, 2023, 123
DOI: 10.1063/5.0177899

The synthesis of carbon-based quantum dots: A supercritical fluid approach and perspective
Y.X. Pang, X. Li, X. Zhang, J.X. Yeoh, C. Wong, S. Manickam, Y. Yan, T. Wu and C.H. Pang
Materials Today Physics, 2022, 27, 100752
DOI: 10.1016/j.mtphys.2022.100752

Van der Waals Epitaxy of Ultrathin β-In2Se3 on Insulators Used in Standard Silicon Microelectronics Technology
Marcel S. Claro and Sascha Sadewasser
Crystal Growth & Design, 2021, 21, 5268
DOI: 10.1021/acs.cgd.1c00599

Optimization strategy of the emerging memristors: From material preparation to device applications
Kaiyun Gou, Yanran Li, Honglin Song, Rong Lu and Jie Jiang
iScience, 2024, 27, 111327
DOI: 10.1016/j.isci.2024.111327

Organic two-dimensional nanostructures: Harnessing soft matter for multifunctional applications
Tarak Nath Das, Sourav Moyra, Russel Aliamintakath Sharafudheen, Arghya Ghosh, Aparna Ramesh, Tapas Kumar Maji and Goutam Ghosh
Journal of Molecular Liquids, 2024, 416, 126506
DOI: 10.1016/j.molliq.2024.126506

Artificial nociceptor based on TiO2 nanosheet memristor
Jinling Lan, Gang Cao, Jingjuan Wang and Xiaobing Yan
Sci. China Mater., 2021, 64, 1703
DOI: 10.1007/s40843-020-1564-y

Memristor based on α-In2Se3 for emulating biological synaptic plasticity and learning behavior
Ying Zhao, Yifei Pei, Zichang Zhang, Xiaoyu Li, Jingjuan Wang, Lei Yan, Hui He, Zhenyu Zhou, Jianhui Zhao, Jingsheng Chen and Xiaobing Yan
Sci. China Mater., 2022, 65, 1631
DOI: 10.1007/s40843-021-1925-x

Artificial synaptic simulating pain-perceptual nociceptor and brain-inspired computing based on Au/Bi3.2La0.8Ti3O12/ITO memristor
Hao Chen, Zhihao Shen, Wen-Tao Guo, Yan-Ping Jiang, Wenhua Li, Dan Zhang, Zhenhua Tang, Qi-Jun Sun and Xin-Gui Tang
Journal of Materiomics, 2024, 10, 1308
DOI: 10.1016/j.jmat.2024.03.011

2D Organic Materials: Status and Challenges
Xiaobing Yan, Ying Zhao, Gang Cao, Xiaoyu Li, Chao Gao, Luan Liu, Shakeel Ahmed, Faizah Altaf, Hui Tan, Xiaopeng Ma, Zhongjian Xie and Han Zhang
Advanced Science, 2023, 10
DOI: 10.1002/advs.202203889

Ultrafast Multilevel Switching and Synaptic Behavior in a Planar Quantum Topological Memristor
Mamoon Ur Rashid, Usman Safder, Sobia Ali Khan, Anh‐Tuan Pham, Muhammad Sheeraz, Nguyen‐Hoang Dang, Duy Le Thanh, Zeeshan Tahir, Faisal Maqbool, Koo‐Hyun Chung, Sunglae Cho, Jungdae Kim and Yong Soo Kim
Advanced Science, 2026, 13
DOI: 10.1002/advs.202520413

Interfacing Biology and Electronics with Memristive Materials
Ioulia Tzouvadaki, Paschalis Gkoupidenis, Stefano Vassanelli, Shiwei Wang and Themis Prodromakis
Advanced Materials, 2023, 35
DOI: 10.1002/adma.202210035

Squeeze-Printing Ultrathin 2D Gallium Oxide out of Liquid Metal for Forming-Free Neuromorphic Memristors
Yimeng Xu, Jie Zhang, Xu Han, Xiaojie Wang, Caiyang Ye, Wenxiang Mu, Zhitai Jia and Kai Qian
ACS Appl. Mater. Interfaces, 2023, 15, 25831
DOI: 10.1021/acsami.3c02998

The current hysteresis effect of tower-like MoS2 nanocrystalline film for field emission and memristor applications
Jiangtao Chen, Xiaofei Dong, Lunlin Shang, Jianbiao Chen, Yun Zhao, Bingjun Yang, Zhiguo Wu and Yan Li
Journal of Alloys and Compounds, 2022, 892, 162091
DOI: 10.1016/j.jallcom.2021.162091

Femtosecond laser thinning for resistivity control of tungsten ditelluride thin-films synthesized from sol-gel deposited tungsten oxide
A. Fernández García, M. Garcia-Lechuga, F. Agulló Rueda, J. Rubio Zuazo and M. Manso Silvan
Surfaces and Interfaces, 2024, 44, 103668
DOI: 10.1016/j.surfin.2023.103668

Resistive Switching Crossbar Arrays Based on Layered Materials
Mario Lanza, Fei Hui, Chao Wen and Andrea C. Ferrari
Advanced Materials, 2023, 35
DOI: 10.1002/adma.202205402

Observation of resistive switching in a graphite/hexagonal boron nitride/graphite heterostructure memristor
Yafeng Deng, Yixiang Li, Pengfei Wang, Shuang Wang, Xuan Pan and Dong Wang
J. Semicond., 2022, 43, 052003
DOI: 10.1088/1674-4926/43/5/052003

Memristors with tunable characteristics based on the tellurene/Nb-doped MoS2 heterojunction toward bio-realistic synaptic emulation
Xiangyu Zeng, Liang Zhang, Jiaqi Peng, Qikai Ye, Boyang Ma, Hongsheng Xu, Yulu Liu, Nazifi Sani Shuaibu, Xiaozhi Wang, Yixiu Wang, Yan Liu, Yue Hao and Genquan Han
Applied Physics Letters, 2023, 123
DOI: 10.1063/5.0170984

Transient N-GQDs/PVA nanocomposite thin film for memristor application
Akshaya Pisal Deshmukh, Kalyanee Patil, Kanchan Barve and Tejashree Bhave
Nanotechnology, 2024, 35, 265706
DOI: 10.1088/1361-6528/ad364b

Advances in Emerging Photonic Memristive and Memristive‐Like Devices
Wenxiao Wang, Song Gao, Yaqi Wang, Yang Li, Wenjing Yue, Hongsen Niu, Feifei Yin, Yunjian Guo and Guozhen Shen
Advanced Science, 2022, 9
DOI: 10.1002/advs.202105577

Resistive Switching in Bigraphene/Diamane Nanostructures Formed on a La3Ga5SiO14 Substrate Using Electron Beam Irradiation
Evgeny V. Emelin, Hak Dong Cho, Vitaly I. Korepanov, Liubov A. Varlamova, Darya O. Klimchuk, Sergey V. Erohin, Konstantin V. Larionov, Deuk Young Kim, Pavel B. Sorokin and Gennady N. Panin
Nanomaterials, 2023, 13, 2978
DOI: 10.3390/nano13222978

Resistive Switching Properties in Memristors for Optoelectronic Synaptic Memristors: Deposition Techniques, Key Performance Parameters, and Applications
Rajwali Khan, Naveed Ur Rehman, Shahid Iqbal, Sherzod Abdullaev and Haila M. Aldosari
ACS Appl. Electron. Mater., 2024, 6, 73
DOI: 10.1021/acsaelm.3c01323

Mixed‐Dimensional Cu‐Based Perovskites for Stable and Energy‐Efficient Neuromorphic Memristors
Swagata Panchanan, Subhajit Dutta, Ghulam Dastgeer, Russlan Jaafreh, Kotiba Hamad and Sang Il Seok
Adv Funct Materials, 2026, 36
DOI: 10.1002/adfm.202520665

Monolayer MoS2 synaptic devices synergistically modulated by Na+ ions and sulfur vacancies for neuromorphic computing and pain perception stimulation
Y.B. Liu, D. Cai, T.C. Zhao, M. Shen, X. Zhou, Z.H. Zhang, X.W. Meng and D.E. Gu
Journal of Materials Science & Technology, 2023, 163, 121
DOI: 10.1016/j.jmst.2023.04.025

Metal Penetration and Grain Boundary in MoS2 Memristors
Han Yan, Pingping Zhuang, Bo Li, Tian Ye, Changjie Zhou, Yushan Chen, Tiejun Li, Weiwei Cai, Daquan Yu, Jing Liu and Weiyi Lin
Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202400264

Synaptic Behavior of Iodine‐Enriched Copper‐Based Perovskite Memristors Developed Through a Sustainable Solution Approach
Subhajit Dutta, Swagata Panchanan, Jung Hyeon Yoo, Surjeet Kumar, Ho Chan Yoo, Sang Il Seok, Ghulam Dastgeer and Dae Ho Yoon
Adv Funct Materials, 2024, 34
DOI: 10.1002/adfm.202410810

Controllable high-performance memristors based on 2D Fe2GeTe3 oxide for biological synapse imitation
Xiangyu Zeng, Shuyi Huang, Qikai Ye, Pandey Rajagopalan, Wei Li, Haoze Kuang, Ge Ye, Chufan Chen, Menglu Li, Yulu Liu, Lin Shi, Yuzheng Guo, Xin Lu, Wenhua Shi, Jikui Luo and Xiaozhi Wang
Nanotechnology, 2021, 32, 325205
DOI: 10.1088/1361-6528/abfd58

Memristive system in 2D materials: redefining the landscape of future nanoelectronics
Prerona Singha and P K Kalita
Nanotechnology, 2026, 37, 072001
DOI: 10.1088/1361-6528/ae435a

Multiple Switching Modes of NiOx Memristors for Memory-Driven Multifunctional Device Applications
Young Ran Park, Haein Cho and Gunuk Wang
ACS Appl. Electron. Mater., 2022, 4, 3739
DOI: 10.1021/acsaelm.2c00780

Ferroelectric Memristor Based on Hf0.5Zr0.5O2 Thin Film Combining Memristive and Neuromorphic Functionalities
Zhen Zhao and Xiaobing Yan
Physica Rapid Research Ltrs, 2020, 14
DOI: 10.1002/pssr.202000224

Memristive, Spintronic, and 2D‐Materials‐Based Devices to Improve and Complement Computing Hardware
Dovydas Joksas, AbdulAziz AlMutairi, Oscar Lee, Murat Cubukcu, Antonio Lombardo, Hidekazu Kurebayashi, Anthony J. Kenyon and Adnan Mehonic
Advanced Intelligent Systems, 2022, 4
DOI: 10.1002/aisy.202200068

2D Material Based Synaptic Devices for Neuromorphic Computing
Guiming Cao, Peng Meng, Jiangang Chen, Haishi Liu, Renji Bian, Chao Zhu, Fucai Liu and Zheng Liu
Adv Funct Materials, 2021, 31
DOI: 10.1002/adfm.202005443

Epitaxial layered Sb2Te3 thin films for memory and neuromorphic applications
Hagen Bryja, Jürgen W Gerlach, Andrea Prager, Martin Ehrhardt, Bernd Rauschenbach and Andriy Lotnyk
2D Mater., 2021, 8, 045027
DOI: 10.1088/2053-1583/ac1e71

Unraveling Conductive Filament Formation in High Performance Halide Perovskite Memristor
José Carlos Pérez‐Martínez, Diego Martín‐Martín, Belén Arredondo and Beatriz Romero
Adv Elect Materials, 2024, 10
DOI: 10.1002/aelm.202400067

Memristive device with highly continuous conduction modulation and its underlying physical mechanism for electronic synapse application
Jing Zhang, Tao Yang, Jingjuan Wang, Jianhui Zhao and Xiaobing Yan
Sci. China Mater., 2021, 64, 179
DOI: 10.1007/s40843-020-1367-x

Plasma-modulated supercapacitive-coupled memristive behavior of two-dimensional gallium oxide channels towards the realization of tunable semiconductor–metal nanoelectronic gates
Mohammad Karbalaei Akbari, Nasrin Siraj Lopa and Serge Zhuiykov
Applied Surface Science, 2024, 669, 160592
DOI: 10.1016/j.apsusc.2024.160592

Analog Resistive Switching Devices for Training Deep Neural Networks with the Novel Tiki-Taka Algorithm
Tommaso Stecconi, Valeria Bragaglia, Malte J. Rasch, Fabio Carta, Folkert Horst, Donato F. Falcone, Sofieke C. ten Kate, Nanbo Gong, Takashi Ando, Antonis Olziersky and Bert Offrein
Nano Lett., 2024, 24, 866
DOI: 10.1021/acs.nanolett.3c03697

Metastable States of 2D-Material-on-Metal-Islands Structures Revealed by Thermal Cycling
Valeriya A. Ievleva, Valery A. Prudkoglyad, Leonid A. Morgun and Aleksandr Yu. Kuntsevich
Micromachines, 2025, 16, 1385
DOI: 10.3390/mi16121385

All inorganic and transparent ITO/boehmite/ITO structure by one-step synthesis method for flexible memristor
Weijie Duan
Solid-State Electronics, 2021, 186, 108180
DOI: 10.1016/j.sse.2021.108180

Tunable Switching Behavior of GO-Based Memristors Using Thermal Reduction
Muayad Abujabal, Heba Abunahla, Baker Mohammad and Anas Alazzam
Nanomaterials, 2022, 12, 1812
DOI: 10.3390/nano12111812

Low-Temperature Synthesis of WSe2 by the Selenization Process under Ultrahigh Vacuum for BEOL Compatible Reconfigurable Neurons
S. S. Teja Nibhanupudi, Anupam Roy, Sayema Chowdhury, Ryan Schalip, Matthew J. Coupin, Kevin C. Matthews, Md Hasibul Alam, Biswarup Satpati, Hema C. P. Movva, Christopher J. Luth, Siyu Wu, Jamie H. Warner and Sanjay K. Banerjee
ACS Appl. Mater. Interfaces, 2024, 16, 22326
DOI: 10.1021/acsami.3c18446

2D Layered Material Alloys: Synthesis and Application in Electronic and Optoelectronic Devices
Jiandong Yao and Guowei Yang
Advanced Science, 2022, 9
DOI: 10.1002/advs.202103036

Switchable domains in point contacts based on transition metal tellurides
Yu. G. Naidyuk, D. L. Bashlakov, O. E. Kvitnitskaya, B. R. Piening, G. Shipunov, D. V. Efremov, S. Aswartham and B. Büchner
Phys. Rev. Materials, 2021, 5
DOI: 10.1103/PhysRevMaterials.5.084004

Selection of Switching Layer Materials for Memristive Devices: from Traditional Oxide to 2D Materials
Yi Da Wang
MSF, 2021, 1027, 107
DOI: 10.4028/www.scientific.net/MSF.1027.107

Memtransistor-Based Ternary Content-Addressable Memories: Design and Evaluation
Denys R. B. Ly and Xuanyao Fong
IEEE Trans. Electron Devices, 2022, 69, 6745
DOI: 10.1109/TED.2022.3217996

Solution-Processed Robust Multifunctional Memristor of 2D Layered Material Thin Film
Puranjay Saha, Muhammed Sahad E, Sandaap Sathyanarayana and Bikas C. Das
ACS Nano, 2024, 18, 1137
DOI: 10.1021/acsnano.3c10775

Bipolar resistive switching and memristive properties of sprayed deposited Bi2WO6 thin films
Amitkumar R. Patil, Tukaram D. Dongale, Sunil S. Nirmale, Rajanish K. Kamat and Keshav Y. Rajpure
Materials Today Communications, 2021, 28, 102621
DOI: 10.1016/j.mtcomm.2021.102621

Self-Powered Memristive Systems for Storage and Neuromorphic Computing
Jiajuan Shi, Zhongqiang Wang, Ye Tao, Haiyang Xu, Xiaoning Zhao, Ya Lin and Yichun Liu
Front. Neurosci., 2021, 15
DOI: 10.3389/fnins.2021.662457

Capacitive and RRAM Forming-Free Memory Behavior of Electron-Beam Deposited Ta2O5 Thin Film for Nonvolatile Memory Application
Elangbam Rameshwar Singh, Mir Waqas Alam and Naorem Khelchand Singh
ACS Appl. Electron. Mater., 2023, 5, 3462
DOI: 10.1021/acsaelm.3c00452

A Review of MXene Memristive Networks: Atomic‐Scale Engineering to Neuromorphic System Integration
Shuai Yang, Jialin Wang, Dongchen Tan, Nan Sun, Haohao Shi, Sheng Bi and Chengming Jiang
Adv Materials Technologies, 2025, 10
DOI: 10.1002/admt.202500685

Resistive Switching Behaviors in Vertically Aligned MoS2 Films with Cu, Ag, and Au Electrodes
Shuei-De Huang, Touko Lehenkari, Topias Järvinen, Seyed Hossein Hosseini-Shokouh, Farzaneh Bouzari, Krisztian Kordas and Hannu-Pekka Komsa
ACS Appl. Electron. Mater., 2026, 8, 1390
DOI: 10.1021/acsaelm.5c02665

Recent Advance of Tellurium for Biomedical Applications
Hengliang Wang, Luxiao Chai, Zhongjian Xie and Han Zhang
Chem. Res. Chin. Univ., 2020, 36, 551
DOI: 10.1007/s40242-020-0193-0

Phosphorylation Enables Nano‐Graphene for Tunable Artificial Synapses
Zhenyu Zhang, Yuanduo Qu, Siran Chen, Shanwu Ke, Mengdi Hao, Yongyue Xiao, Shuai Zhang, Ziqiang Cheng, Jiangrong Xiao, Hao Huang, Cong Ye, Paul K. Chu, Xue‐Feng Yu and Jiahong Wang
Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202416794

Ion Migration in Monolayer MoS2 Memristors
Sotirios Papadopoulos, Tarun Agarwal, Achint Jain, Takashi Taniguchi, Kenji Watanabe, Mathieu Luisier, Alexandros Emboras and Lukas Novotny
Phys. Rev. Applied, 2022, 18
DOI: 10.1103/PhysRevApplied.18.014018

Electrodeposition of GeSbTe-Based Resistive Switching Memory in Crossbar Arrays
Ayoub H. Jaafar, Lingcong Meng, Yasir J. Noori, Wenjian Zhang, Yisong Han, Richard Beanland, David C. Smith, Gillian Reid, Kees de Groot, Ruomeng Huang and Philip N. Bartlett
J. Phys. Chem. C, 2021, 125, 26247
DOI: 10.1021/acs.jpcc.1c08549

Two-dimensional materials for artificial synapses: toward a practical application
I-Ting Wang, Chih-Cheng Chang, Yen-Yu Chen, Yi-Shin Su and Tuo-Hung Hou
Neuromorph. Comput. Eng., 2022, 2, 012003
DOI: 10.1088/2634-4386/ac5086

Recent Progress in 2-Dimensional Organic–Inorganic Heterojunction Optoelectronic Devices
Huchao Li, Zan Wang, Yilin Zhao, Dechao Geng, Deyang Ji and Wenping Hu
Adv Devices Instrum, 2025, 6
DOI: 10.34133/adi.0069

Black Phosphorus/Polymers: Status and Challenges
Ye Zhang, Chunyang Ma, Jianlei Xie, Hans Ågren and Han Zhang
Advanced Materials, 2021, 33
DOI: 10.1002/adma.202100113

Interface engineering in optoelectronic hafnium oxide-based heterojunction synaptic device for neuromorphic computing
Xiao-Fang Luo, Tian-Xiao Xu, Dan Zhang, Qi-Jun Sun, Zhenhua Tang, Yan-Ping Jiang and Xin-Gui Tang
Journal of Colloid and Interface Science, 2026, 704, 139324
DOI: 10.1016/j.jcis.2025.139324

In‐Memory Computing with Self‐Rectification and Dynamic Logical Reconfiguration of 12 Algorithms in a Single Halide Perovskites
Song He, Wenkang Zhong, Mufan Zhu, Shuaidi Wu, Wenju Xie, Zhiyong Ouyang, Baochang Cheng and Jie Zhao
Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202424114

Atomic Nb-doping of WS2 for high-performance synaptic transistors in neuromorphic computing
Kejie Guan, Yinxiao Li, Lin Liu, Fuqin Sun, Yingyi Wang, Zhuo Zheng, Weifan Zhou, Cheng Zhang, Zhengyang Cai, Xiaowei Wang, Simin Feng and Ting Zhang
Microsyst Nanoeng, 2024, 10
DOI: 10.1038/s41378-024-00779-1

Bio-inspired artificial heterosynapse based on carbon nanotubes memtransistor with dynamically tunable analog switching behavior
Yanmei Sun, Yufei Wang, Qi Yuan and Bingxun Li
Materials Today Nano, 2023, 24, 100398
DOI: 10.1016/j.mtnano.2023.100398

Application of Resistive Random Access Memory in Hardware Security: A Review
Gokulnath Rajendran, Writam Banerjee, Anupam Chattopadhyay and Mohamed M. Sabry Aly
Adv Elect Materials, 2021, 7
DOI: 10.1002/aelm.202100536

Emerging materials for resistive switching memories: Prospects for enhanced sustainability and performance for targeted applications
Michalis Loizos, Konstantinos Rogdakis, Ashitha Paingott Parambil, Monica Lira-Cantu and Emmanuel Kymakis
APL Energy, 2024, 2
DOI: 10.1063/5.0237386

Forming-free bipolar resistive switching characteristics in Al/Mn3O4/FTO RRAM device
Vidit Pandey, Adiba Adiba, Tufail Ahmad, Priyanka Nehla and Sandeep Munjal
Journal of Physics and Chemistry of Solids, 2022, 165, 110689
DOI: 10.1016/j.jpcs.2022.110689

Flexible Electro‐Optical Perovskite/Electrolyte Synaptic Transistor to Emulate Photoelectric‐Synergistic Neural Learning Rules and Reflex‐Arc Behavior
Huanhuan Wei, Ge Yao, Yao Ni, Lu Yang, Jiaqi Liu, Lin Sun, Xiaojuan Zhang, Jie Yang, Yue Xiao, Fangcai Zheng and Wentao Xu
Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202304000

Engineering the resistive switching properties of 2D WS2 memristor: role of band gap
Qing Cao, Pengfei Zou, Pengcheng Li, Limiao Xiong, Hailin Bi and Jun Wu
J Mater Sci: Mater Electron, 2023, 34
DOI: 10.1007/s10854-022-09612-9

A Review of the Synthesis, Properties, and Applications of 2D Materials
Vigneshwaran Shanmugam, Rhoda Afriyie Mensah, Karthik Babu, Sidique Gawusu, Avishek Chanda, Yongming Tu, Rasoul Esmaeely Neisiany, Michael Försth, Gabriel Sas and Oisik Das
Part & Part Syst Charact, 2022, 39
DOI: 10.1002/ppsc.202200031

Carbon Nanodots Memristor: An Emerging Candidate toward Artificial Biosynapse and Human Sensory Perception System
Cheng Zhang, Mohan Chen, Yelong Pan, Yang Li, Kuaibing Wang, Junwei Yuan, Yanqiu Sun and Qichun Zhang
Advanced Science, 2023, 10
DOI: 10.1002/advs.202207229

Intrinsically ionic conductive nanofibrils for ultra-thin bio-memristor with low operating voltage
Yi Zhang, Suna Fan, Qianqian Niu, Fang Han and Yaopeng Zhang
Sci. China Mater., 2022, 65, 3096
DOI: 10.1007/s40843-022-2115-6

A High‐Performance Memristor Device and Its Filter Circuit Application
Chao Gao, Hong Wang, Zhiping Zhu, Lei Zhang, Yongqiang Yang, Gang Cao and Xiaobing Yan
Physica Rapid Research Ltrs, 2020, 14
DOI: 10.1002/pssr.202000389

Optical Properties of Nanoscale-Thick 2H and 1T′ MoTe2 Films via Spectroscopic Ellipsometry: Implications for Optoelectronic Devices
Nand Kumar, Kamlesh Bhatt, Santanu Kandar, Gourav Rana, Chandan Bera, Ashok Kumar Kapoor and Rajendra Singh
ACS Appl. Nano Mater., 2024, 7, 23834
DOI: 10.1021/acsanm.4c04325

Modeling Photodetection at the Graphene/Ag2S Interface
Davide Spirito, Beatriz Martín-García, Vaidotas Mišeikis, Camilla Coletti, Francesco Bonaccorso and Roman Krahne
Physica Rapid Research Ltrs, 2021, 15
DOI: 10.1002/pssr.202100120

Advancements in 2D layered material memristors: unleashing their potential beyond memory
Kiran A. Nirmal, Dhananjay D. Kumbhar, Arul Varman Kesavan, Tukaram D. Dongale and Tae Geun Kim
npj 2D Mater Appl, 2024, 8
DOI: 10.1038/s41699-024-00522-4

Laser-induced graphene-based miniaturized, flexible, non-volatile resistive switching memory devices
Prasanth K. Enaganti, Avinash Kothuru and Sanket Goel
Journal of Materials Research, 2022, 37, 3976
DOI: 10.1557/s43578-022-00590-6

Circuit‐Level Memory Technologies and Applications based on 2D Materials
Jiahui Ma, Hefei Liu, Ning Yang, Jingyi Zou, Sen Lin, Yuhao Zhang, Xu Zhang, Jing Guo and Han Wang
Advanced Materials, 2022, 34
DOI: 10.1002/adma.202202371

Optically-controlled resistive switching effects of CdS nanowire memtransistor*
Jia-Ning Liu, Feng-Xiang Chen, Wen Deng, Xue-Ling Yu and Li-Sheng Wang
Chinese Phys. B, 2021, 30, 116105
DOI: 10.1088/1674-1056/ac16ce

Realization of a non-markov chain in a single 2D mineral RRAM
Rongjie Zhang, Wenjun Chen, Changjiu Teng, Wugang Liao, Bilu Liu and Hui-Ming Cheng
Science Bulletin, 2021, 66, 1634
DOI: 10.1016/j.scib.2021.04.025

Research Process of Carbon Dots in Memristors
Haotian Hao, Lingpeng Yan, Mixue Wang, Yanli Cao, Jintao He and Yongzhen Yang
Adv Elect Materials, 2023, 9
DOI: 10.1002/aelm.202201195

A biomimetic afferent nervous system based on the flexible artificial synapse
Kaiyang Wang, Yunfang Jia and Xiaobing Yan
Nano Energy, 2022, 100, 107486
DOI: 10.1016/j.nanoen.2022.107486

2D Halide Perovskites for High‐Performance Resistive Switching Memory and Artificial Synapse Applications
Bixin Li, Fei Xia, Bin Du, Shiyang Zhang, Lan Xu, Qiong Su, Dingke Zhang and Junliang Yang
Advanced Science, 2024, 11
DOI: 10.1002/advs.202310263

Advances in Memristor-Based Neural Networks
Weilin Xu, Jingjuan Wang and Xiaobing Yan
Front. Nanotechnol., 2021, 3
DOI: 10.3389/fnano.2021.645995

Memristor Based on Inorganic and Organic Two-Dimensional Materials: Mechanisms, Performance, and Synaptic Applications
Kanghong Liao, Peixian Lei, Meilin Tu, Songwen Luo, Ting Jiang, Wenjing Jie and Jianhua Hao
ACS Appl. Mater. Interfaces, 2021, 13, 32606
DOI: 10.1021/acsami.1c07665

Engineering TiO₂ memristors: A material-centric review
Shilpa Shivaram, S. K. Suresh Babu, Done Rinshun Paul and Archana Ashok
J. Mater. Res., 2025, 40, 1449
DOI: 10.1557/s43578-025-01600-z

Fabrication of Sb2S3/Sb2Se3 heterostructure for potential resistive switching applications
Pukhraj Prajapat, Pargam Vashishtha, Preeti Goswami and Govind Gupta
Nano Ex., 2024, 5, 015005
DOI: 10.1088/2632-959X/ad1695

Compacted Self‐Assembly Graphene with Hydrogen Plasma Surface Modification for Robust Artificial Electronic Synapses of Gadolinium Oxide Memristors
Ya‐Ting Chan, Yi Fu, Lu Yu, Feng‐Yu Wu, Ho‐Wei Wang, Ting‐Han Lin, Shun‐Hsiang Chan, Ming‐Chung Wu and Jer‐Chyi Wang
Adv Materials Inter, 2020, 7
DOI: 10.1002/admi.202000860

Capacitive Effects of Memristive Structure Composed of Multi-walled CNT and Sodium Alginate Under DC Offset
Yasemen Ince Keser, Yeter Sekertekin and Dincer Gokcen
J. Electron. Mater., 2023, 52, 2012
DOI: 10.1007/s11664-022-10165-0

Advancing Biosensing With Memristive Technologies and Machine Learning: A Review
Manel Bouzouita, Fakhreddine Zayer, Ioulia Tzouvadaki, Sandro Carrara and Hamdi Belgacem
IEEE Sensors J., 2026, 26, 3558
DOI: 10.1109/JSEN.2025.3647366

Topochemical Synthesis of Copper Phosphide Nanoribbons for Flexible Optoelectronic Memristors
Yanxin Liu, Lie Wu, Qian Liu, Lei Liu, Shanwu Ke, Zehui Peng, Tongyu Shi, Xinru Yuan, Hao Huang, Jia Li, Cong Ye, Paul K. Chu, Jiahong Wang and Xue‐Feng Yu
Adv Funct Materials, 2022, 32
DOI: 10.1002/adfm.202110900

Recent advances in synthesis and modulation of 2D heterostructures for sensing and detection applications
Rumaisa Tariq, Waseem Raza, Karma M. Albalawi, Arshad Hussain, Munir Ahmad, Muhammad Asim Mushtaq, Mohamed H. Helal, Ibrahim A. Shaaban, Shaukat Khan and Muhammad Sufyan Javed
Chemical Engineering Journal, 2025, 513, 162688
DOI: 10.1016/j.cej.2025.162688

Dependence of Ta2O5 memristor storage and synaptic performances on oxygen content
Kunming Liu, Fang Wang, Xin Shan, Ke Shan, Zexia Ma, Kai Hu, Hongling Guo, Zhitang Song and Kailiang Zhang
Appl. Phys. Express, 2023, 16, 061007
DOI: 10.35848/1882-0786/acdf3d

Hydrothermal Synthesis of Vinylidene-Linked Ionic Covalent Organic Frameworks for Robust Biomimetic Memristors
Hao Wang, Jianshan Zhao, Tianyue Huang, Fuzhen Xuan and Bin Zhang
ACS Appl. Mater. Interfaces, 2025, 17, 47337
DOI: 10.1021/acsami.5c13200

Boost of the Bio-memristor Performance for Artificial Electronic Synapses by Surface Reconstruction
Jingjuan Wang, Chenyang Shi, Maria L. Sushko, Jinling Lan, Kaixuan Sun, Jianhui Zhao, XiangYang Liu and Xiaobing Yan
ACS Appl. Mater. Interfaces, 2021, 13, 39641
DOI: 10.1021/acsami.1c07687

Crystal structure, synthesis and characterization of different chromium-based two-dimensional compounds
Maria Hasan, Huy Q. Ta, Sami Ullah, Xiaoqin Yang, Jingping Luo, Alicja Bachmatiuk, Thomas Gemming, Barbara Trzebicka, Azhar Mahmood, Mengqi Zeng, Lei Fu, Lijun Liu and Mark H. Rümmeli
Arabian Journal of Chemistry, 2023, 16, 104973
DOI: 10.1016/j.arabjc.2023.104973

Memristive Devices Based on Two-Dimensional Transition Metal Chalcogenides for Neuromorphic Computing
Ki Chang Kwon, Ji Hyun Baek, Kootak Hong, Soo Young Kim and Ho Won Jang
Nano-Micro Lett., 2022, 14
DOI: 10.1007/s40820-021-00784-3

Artificial Visual Perception Nervous System Based on Low-Dimensional Material Photoelectric Memristors
Yifei Pei, Lei Yan, Zuheng Wu, Jikai Lu, Jianhui Zhao, Jingsheng Chen, Qi Liu and Xiaobing Yan
ACS Nano, 2021, 15, 17319
DOI: 10.1021/acsnano.1c04676

Flexible memristors for next-generation electronics: materials, fabrication and applications
Soumyadip Paul, Chinmayee Mandar Mhaskar, René Weißing, Gaurav Pandey, Sangeeta Roy Chaudhuri, Sanjay Mathur and Ayan Roy Chaudhuri
Flex. Print. Electron., 2026, 11, 013002
DOI: 10.1088/2058-8585/ae4ca1

Memory-centric neuromorphic computing for unstructured data processing
Sang Hyun Sung, Tae Jin Kim, Hera Shin, Hoon Namkung, Tae Hong Im, Hee Seung Wang and Keon Jae Lee
Nano Res., 2021, 14, 3126
DOI: 10.1007/s12274-021-3452-6

Improved resistive switching performance of amorphous InGaZnO-based memristor with the TiO2 insertion layer
Xin Fang, Xiaofeng Zhao, Chunpeng Ai, Zhipeng Yu, Sen Ding and Dianzhong Wen
Ceramics International, 2024, 50, 7230
DOI: 10.1016/j.ceramint.2023.11.196

Emerging of two-dimensional materials in novel memristor
Zhican Zhou, Fengyou Yang, Shu Wang, Lei Wang, Xiaofeng Wang, Cong Wang, Yong Xie and Qian Liu
Front. Phys., 2022, 17
DOI: 10.1007/s11467-021-1114-5

Nanomaterials for Flexible Neuromorphics
Guanglong Ding, Hang Li, JiYu Zhao, Kui Zhou, Yongbiao Zhai, Ziyu Lv, Meng Zhang, Yan Yan, Su-Ting Han and Ye Zhou
Chem. Rev., 2024, 124, 12738
DOI: 10.1021/acs.chemrev.4c00369

Low-dimensional nanomaterials enabled autoimmune disease treatments: Recent advances, strategies, and future challenges
Lu-xiao Chai, Xing-xing Fan, Yi-han Zuo, Bin Zhang, Guo-hui Nie, Ni Xie, Zhong-jian Xie and Han Zhang
Coordination Chemistry Reviews, 2021, 432, 213697
DOI: 10.1016/j.ccr.2020.213697

Nanoionics driven reconfigurable heterojunctions for advanced information devices
Xiaoyu Ye, Kang Chen, Cong Hu, Xiaojian Zhu and Run-Wei Li
Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0268254

Advances of 2D‐Enabled Photothermal Materials in Hybrid Solar‐Driven Interfacial Evaporation Systems toward Water‐Fuel‐Energy Crisis
Muhammad Sultan Irshad, Naila Arshad, M. Sohail Asghar, Yabin Hao, Muneerah Alomar, Shaohui Zhang, Jian Zhang, Jinming Guo, Iftikhar Ahmed, Naveed Mushtaq, M. A. K. Yousaf Shah, Laila Noureen, S. Wageh, Omar A. Al‐Hartomy, Abul Kalam, Van‐Duong Dao, Hao Wang, Xianbao Wang and Han Zhang
Adv Funct Materials, 2023, 33
DOI: 10.1002/adfm.202304936

Uncorrelated stochastic bitstream generation and arithmetic computations using Cu:ZnO memristors
Pavan Kumar Reddy Boppidi, Bharathwaj Suresh, G. Abhijith, P. Michael Preetam Raj, Souri Banerjee and Souvik Kundu
Materials Science in Semiconductor Processing, 2022, 139, 106355
DOI: 10.1016/j.mssp.2021.106355

Highly Stable Chip-Scale Tellurium Memtransistor Based on Field-Induced Oxygen Vacancy Migration
Eunjeong Cho, Seyoung Oh, Ojun Kwon, Min Jeong Kim, Wondeok Seo, Minhee Kim, Shinhoi Kim, Yeongeun Kwon, Yedam Kim, Yujung Kim, Jongwon Yoon, Woojin Park and Byungjin Cho
ACS Appl. Mater. Interfaces, 2026, 18, 17947
DOI: 10.1021/acsami.5c20005

一种在空气中运行稳定的界面保护型光学神经突触器件
李欣蔚 Li Xinwei, 杨成东 Yang Chengdong, 苏琳琳 Su Linlin and 刘逸龙 Liu Yilong
光学学报, 2024, 44, 1423002
DOI: 10.3788/AOS240495

Polarizable Lattice Induced Persistent and Preferential Electron Self-Trapping in FePSe3 for Bimodal Operation Artificial Synapse
Jijian Liu, Guoquan Gao, Dan Guo, Lan Jiang, Weikang Dong, Keming Li, Shuang Du, Yanzhong Wang, Ping Wang, Tianyu Zang, Zhihang Zhang, Minghui Li, Qingmei Hu, Yadi Guan, Chunyu Zhao, Shoujun Zheng, Tong Zhu, Yao Zhou and Jiadong Zhou
ACS Nano, 2026, 20, 4313
DOI: 10.1021/acsnano.5c17513

Six Decades of Research on 2D Materials: Progress, Dead Ends, and New Horizons
Frank Schwierz and Martin Ziegler
IEEE J. Electron Devices Soc., 2022, 10, 443
DOI: 10.1109/JEDS.2022.3144500

Machine-learned search for the stable structures of silicene on Ag(111)
Yuji Hamamoto, Thanh Ngoc Pham, Malthe K. Bisbo, Bjørk Hammer and Yoshitada Morikawa
Phys. Rev. Materials, 2023, 7
DOI: 10.1103/PhysRevMaterials.7.124002

Novel memristor with Au/SnSe/ITO structure: First fabrication via a hydrothermal and sputtering approach
Wen Zhang, Mingyang Gao, Xiaoyi Lei, Chunxue Zhai and Zhiyong Zhang
Journal of Alloys and Compounds, 2024, 994, 174742
DOI: 10.1016/j.jallcom.2024.174742

Universal Approach for Calibrating Large‐Scale Electronic and Photonic Crossbar Arrays
Jichao Fan, Yingheng Tang and Weilu Gao
Advanced Intelligent Systems, 2023, 5
DOI: 10.1002/aisy.202300147

Resistive Switching in CsPbBr3 (0D)/MoS2 (2D) Heterojunction System: Trap-Controlled Space Charge Limited Transport Mechanism
Akshaya Pisal Deshmukh, Kalyanee Patil, Satishchandra Ogale and Tejashree Bhave
ACS Appl. Electron. Mater., 2023, 5, 1536
DOI: 10.1021/acsaelm.2c01590