Yifu
Zhuo
a,
Yaping
Niu
a,
Fugen
Wu
*b,
Jie
Li
a,
Yun
Wang
a,
Qi
Zhang
cde,
Yun
Teng
de,
Xiaozhu
Xie
f,
Huafeng
Dong
g and
Zhongfei
Mu
*ah
aSchool of Materials and Energy, Guangdong University of Technology, Waihuan Xi Road, No. 100, Guangzhou 510006, People's Republic of China. E-mail: muzhongfei@gdut.edu.cn
bThe College of Information Engineering, Guangzhou Vocational University of Science and Technology, Guangcong Nine Road, Guangzhou, 510550, People's Republic of China. E-mail: wufugen@gkd.edu.cn
cThe School of Information Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
dThe School of Electronic Engineering, Beijing University of Posts and Telecommunications, Bejing100876, People's Republic of China
eBeijing Key Laboratory of Space-Ground Interconnection and Convergence, Beijing 100876, People's Republic of China
fLaser Micro/Nano Processing Lab, School of Electromechanical Engineering, Guangdong University of Technology, Guangzhou 510006, People's Republic of China
gSchool of Physics and Optoelectronic Engineering, Guangdong University of Technology, Waihuan Xi Road, No. 100, Guangzhou, 510006, People's Republic of China
hDepartment of Experimental Teaching, Guangdong University of Technology, Waihuan Xi Road, No. 100, Guangzhou, 510006, People's Republic of China
First published on 16th April 2025
Long-wavelength (1000–2500 nm) near-infrared (LWNIR) phosphors present important application prospects in biomedical and nondestructive testing. A major challenge for current researchers is obtaining phosphors with super-wide-range emission across the NIR-II and NIR-III spectral regions, which is highly advantageous for the development of NIR light sources. Ni2+ is a prominent activator for LWNIR emission and is sensitive to the octahedral crystal field environment. Herein, a series of Ni2+-doped Sr2B′B′′O6 (B′3+ = Ga, Sc; B′′5+ = Ta, Sb) phosphors with double perovskite structures was investigated. Through crystal field engineering of B-site cations, specifically Sc3+–Sb5+ co-substitution for Ga3+–Ta5+, the emission peak of Ni2+ was tuned from 1295 to 1665 nm. Such a super-wide-range tunable emission of up to 370 nm was unprecedented. The emission spectra of Sr2Ga1−xScxTa1−ySbyO6:0.01Ni2+ solid solution phosphors ranged from 1000 to 2100 nm (across NIR-II and NIR-III). The excitation peak was correspondingly shifted from 398 to 454 nm, which was suitable for commercial near-ultraviolet and blue LEDs. The potential applications of our phosphors in biomedical imaging and nondestructive testing were demonstrated. This work not only developed an efficient super-wide-range tunable emission phosphor suitable for LWNIR light sources but also revealed the emission characteristics of Ni2+-doped double perovskites, providing important technical guidance for achieving LWNIR emission and developing large-range tunable phosphors.
The activators of NIR phosphors mainly include rare earth metal ions and transition metal ions. Emission from the former is primarily attributed to 4f–4f spin forbidden transitions, which exhibit sharp line emission characteristics, while emission from the latter is broadband due to 3d–3d spin-allowed transitions. Broadband NIR spectroscopy offers broader application potential because it can cover a larger detection range. So far, there have been numerous investigations on transition metal ion-doped (such as Mn2+, Mn4+, Cr3+, Fe3+) phosphors.10–13 Among these transition metal ions, Cr3+ ions have become a focus of research owing to their strong absorption in the blue light region and super-broadband emission in many hosts, such as La2MgZrO6:Cr3+14 (full width at half maximum (FWHM) = 210 nm), Mg7Ga2GeO12:Cr3+15 (FWHM = 226 nm), Li3Sc2(PO4)3:Cr3+16 (FWHM = 240 nm), and LaTiTaO6:Cr3+17 (FWHM = 300 nm). Exploration of the NIR emission from non-toxic Fe3+ is also rapidly emerging; however, relevant applications are limited because its excitation is mainly located in the ultraviolet range. Examples include MgGa2O4:Fe3+,18 Sr2LuSbO6:Fe3+,19 and Ca2.5Hf2.5(Ga, Al)3O12:Fe3+.20 In addition, NIR emission from transition metal ions is highly sensitive to the surrounding crystal field environment. Luminescence tuning and enhancement can be achieved by constructing chemical unit substitutions in solid solutions to modify the crystal field environment within the host lattice. For example, Liu et al.21 reported LiIn2SbO6:Cr3+ phosphors, and controllable emission tuning from 965 to 892 nm is achieved by chemical unit co-substitution of [Zn2+–Zn2+] for [Li+–In3+]. Zhao et al.22 developed a series of antimonate materials A2MSbO6:Cr3+ (A2+ = Ca, Sr, Ba; M3+ = Ga, In, Sc, Y) with double perovskite structure. Through a composition modulation, the NIR emission peaks ranged from 825 to 1010 nm. Zhang et al.23 designed ABO4:Cr3+ (A3+ = Ga, Sc, In; B5+ = Ta, Nb) NIR emission phosphors based on crystal field engineering. Through cation substitution, spectral tuning of nearly 200 nm (from 825 to 1025 nm) is achieved as the crystal field strength decreases. Moreover, Zhang et al.24 and Liu et al.25 reported the Fe3+ activated double perovskite NIR phosphors A2BSbO6:Fe3+ (A = Ca, Sr, Ba; B = Sc, Y, Ga) and A2BB′O6:Fe3+(A = Sr2+, Ca2+; B, B′ = In3+, Sb5+, Sn4+). The emission tuning in the range from 842 to 944 nm and from 885 to 1005 nm is achieved by crystal field engineering, respectively.
It is worth noting that emission from the above-mentioned transition metal ions is usually located in the NIR-I (700–1000 nm) region. Meanwhile, the vibration absorption of chemical groups, such as C–H, N–H, and O–H bonds, are located in the long-wavelength near-infrared (LWNIR) regions with longer wavelengths (1000–2500 nm).26 Therefore, there is an urgent need to develop efficient LWNIR emitting materials. Ni2+ with 3d8 electrical configuration is an ideal LWNIR emitting activator due to 3T2g(F) → 3A2g(F) spin-permitted transitions. Similarly, the emission from Ni2+ ions is also sensitive to the crystal field environment. Huang et al.27 studied Ca2GeO4:Ni2+ and found that Ni2+ ions can yield sharp emission (FWHM = 16 nm) when entering the [GeO4] tetrahedron with lower formation energy. However, studies have found that Ni2+ ions exhibit broadband emission in octahedral crystal fields, and the FWHM usually exceeds 200 nm.28–30 At present, one of the main systems for the investigation of Ni2+ ions is Cr3+ and Ni2+ co-doped luminescent materials.31–35 The aim is to improve the blue light absorption of Ni2+ with the help of energy transfer from Cr3+ to Ni2+. However, it does not solve the problem of tunable emission of Ni2+ ions to cover a larger LWNIR range. For the NIR pc-LEDs, the use of emission tunable phosphors makes it easy to achieve super-wide-range band emission using only a single solid solution phosphor, avoiding the use of multiple phosphors with unavoidable problems, such as differentiated optimal excitation wavelengths, reabsorption between different phosphors, complex preparation processes, and high cost. So far, few investigations have been reported on the tunability of the Ni2+ NIR emission. The octahedra in the double perovskite structure provide favorable conditions for the broadband emission of Ni2+ ions, and its B site can be flexibly adjusted by cation substitution. As with the Cr3+ and Fe3+ doped double perovskite structure described earlier, the luminescence tuning of Ni2+ in this structure can be expected.
Previous researchers have found that the emission wavelength of phosphors can be effectively tuned either by Sc3+ substitution for Ga3+ or Sb5+ substitution for Ta5+.36–39 This forms the basis of the current work. We designed and synthesized a series of Ni2+ doped Sr2B′B′′O6 (B′3+ = Ga, Sc; B′′5+ = Ta, Sb) phosphors and obtained LWNIR emissions covering 1000–2100 nm across the NIR-II and NIR-III spectral region. When the cations Ga3+ and Ta5+ at the B sites are gradually substituted by Sc3+ and Sb5+, the emission peak is shifted from 1295 to 1665 nm. The super-wide emission tuning range of nearly 370 nm is unprecedented. Simultaneously, the excitation wavelength is also shifted from 398 to 454 nm. A super-wide-range emission with FWHM up to 368 nm of mixing Sr2Ga1−xScxTa1−ySbyO6:0.01Ni2+ solid solution phosphors in equal proportion was presented under the excitation of a 395 nm near-ultraviolet (NUV) chip. In addition, the applications of phosphors in qualitative and quantitative analyses of liquid substances and bioimaging were verified. This study provides an effective strategy for developing long-wavelength, high-efficiency NIR materials and obtaining a super-wide NIR tuning range.
:
4. Then, an equal proportion of solid solution phosphors were added to the mixed glue and stirred well for 10 min. The stirred mixture was integrated onto a 395 nm NUV chip and cured in a drying oven at 100 °C for 1 h. The NIR pc-LED device was prepared after complete solidification.
The XRD patterns of the synthesized Sr2B′B′′O6:0.01Ni2+ (B′3+ = Ga, Sc; B′′5+ = Ta, Sb) are shown in Fig. 1(b). All the diffraction peaks of the samples are consistent with the corresponding standard cards. The introduction of small amounts of Ni2+ does not bring additional phases. This indicates that the designed phosphors have been synthesized successfully. Fig. S1 (ESI†) shows the XRD pattern changes in two alternative routes (first: Sc3+ replaces Ga3+, then Sb5+ replaces Ta5+; second: Sb5+ replaces Ta5+, then Sc3+ replaces Ga3+). The deviation of diffraction peaks is caused by the difference in the cation radius. In the six coordinate environment, RSc3+ = 0.75 Å > RGa3+ = 0.62 Å, RSb5+ = 0.60 Å < RTa5+ = 0.64 Å. As a result, the Sc3+ substitution for Ga3+ causes lattice expansion and shifts the diffraction peak to a smaller angle, while the Sb5+ substitution for Ta5+ causes lattice contraction and shifts to a larger angle. Rietveld refinement results of solid solution phosphors are shown in Fig. 1(c) and Fig. S2 (ESI†). The values of Rp, Rwp, and χ2 are quite satisfactory, which further indicates the phase purity of the phosphors. The refined crystallographic parameters and main bond lengths are presented in Fig. S3 (ESI†) and Tables S1, S2 (ESI†). As expected, the change in the process of the two groups of samples indicates a significant increase in crystallographic parameters and average bond lengths by Sc3+ substitution for Ga3+, while a slight decrease in crystallographic parameters and average bond by Sb5+ substitution for Ta5+. This proves the formation of a continuous solid solution. The ionic radius of Ni2+ (RNi2+ = 0.69 Å) is similar to Sc3+, Ga3+, Ta5+ and Sb5+, and the radius ratio difference (Dr) calculated according to Formula S2 (ESI†) are all less than 30%. There is a significant difference in the valence states between Ni2+ and Ta5+/Sb5+. Thus, Ni2+ ions are more favorable for entering the [GaO6] and [ScO6] octahedra.
Two representative samples, Sr2GaTaO6:0.01Ni2+ and Sr2ScSbO6:0.01Ni2+, were selected to analyze the morphology, composition and valence states. The SEM and EDS images of the two samples are displayed in Fig. 2(a). The samples are composed of 5–10 μm particles, and the elements of Sr, Ga/Sc, Ta/Sb, O, and Ni are uniformly distributed on the surface, demonstrating that Ni2+ ions have been doped into the host lattice successfully. Fig. 2(b) shows the HRTEM images of two samples. The interplanar spacings of (112) and (![[1 with combining macron]](https://www.rsc.org/images/entities/char_0031_0304.gif)
2) planes, corresponding to the main diffraction peaks, increase from 2.918 to 2.995 Å, further confirming the lattice expansion caused by Sc3+ and Sb5+ co-substitution for Ga3+ and Ta5+. In addition, the crystal planes corresponding to the two diffraction peaks are distinguished in the SAED image. Fig. S4 (ESI†) shows the XPS full spectra of two samples and the main elements exhibiting a strong signal. The peaks of the Ni fine spectra are relatively weaker in Fig. 2(c) due to the low content in the system. However, there are mainly two peaks corresponding to the 2p3/2 and 2p1/2 orbitals of Ni, which is consistent with the binding energy of Ni2+.
As illustrated in Fig. 3(a), compared with the original structure Sr2GaTaO6:0.01Ni2+, four absorption bands present a significant red-shift trend by Sc3+ substitution for Ga3+ and Sb5+ substitution for Ta5+. This indicates that the 3d orbital crystal field environment of Ni2+ is strongly affected by ion substitution engineering. The effect of doping amount on the photoluminescence performance of the initial structure is exhibited in Fig. 3(b). The broadband emission from 1000 to 1700 nm is exhibited in Sr2GaTaO6:XNi2+ phosphors under the 398 nm excitation, which is attributed to the 3T2g (F) → 3A2g (F) transition of Ni2+. With the increase in Ni2+ doping concentration, the luminous intensity increases first, then decreases, and the optimal luminous intensity is obtained when X = 0.01, where the emission peak is located at 1295 nm. It can be observed that the emission peak position is red-shifted with the continuous introduction of Ni2+. This is attributed to the enhanced interaction of the exchange coupled Ni2+–Ni2+ ion pairs, which leads to the energy level splitting of the excited state, reducing the energy difference between 3T2g(F) and 3A2g(F).42
In order to explore the change in luminescence properties by Sc3+ substitution for Ga3+ and Sb5+ substitution for Ta5+, the excitation and emission spectra of Sr2B′B′′O6:0.01Ni2+ (B′3+ = Ga, Sc; B′′5+ = Ta, Sb) phosphors are depicted in Fig. 3(c) (the dashed line is the result of curve fitting owing to the testing range of the detector). Similar to the DR spectra, three characteristic excitation peaks of Ni2+ are all exhibited in the excitation spectra of four samples, and the excitation band of 300–350 nm is caused by the interband transition between the valence band and the conduction band. Significantly, the peak wavelengths of excitation and emission spectra of Ni2+ are changed by adjusting the cation composition. For Sr2ScTaO6:0.01Ni2+, the excitation and emission peaks are located at 421 and 1460 nm, respectively. For Sr2ScSbO6:0.01Ni2+, the excitation and emission peaks are located at 454 and 1665 nm, respectively. Owing to the strong absorption in the DR spectrum and low Eg value of Sr2GaSbO6:0.01Ni2+, the characteristic excitation and emission of Ni2+ are relatively weak. Localized amplification was performed on the characteristic excitation of Ni2+. For Sr2GaSbO6:0.01Ni2+, and the excitation and emission peaks are located at 435 and 1500 nm, respectively. In an effort to study the spectral change before and after substitution in more detail, Sr2Ga1−xScxTa1−ySbyO6:0.01Ni2+ solid solution phosphors were selected for analysis. All samples are pure phase (Fig. S6, ESI†). The normalized excitation and emission spectra of solid solution phosphors are presented in Fig. 3(d) and (e). With the increase in x value (Ga3+ is gradually substituted by Sc3+), the excitation and emission spectra were gradually red-shifted. After complete substitution, the excitation spectra show a red-shift from 398 to 421 nm, and the emission spectra show a red-shift from 1295 to 1460 nm. Similarly, with the increase in the y value (Ta5+ is gradually substituted by Sb5+), the excitation spectra show a further red-shift from 421 to 454 nm, and the emission spectra show a further red-shift from 1460 to 1665 nm. The results show that Ga3+ and Ta5+ are gradually substituted by Sc3+ and Sb5+ in Ni2+ doped Sr2Ga1−xScxTa1−ySbyO6 solid solution, and the emission peak causes an enormous red-shift of 370 nm, which is unprecedented. The entire emission range covers 1000–2100 nm, which realizes the super-wide-range emission across the NIR-II and NIR-III regions. Such a large spectral response range demonstrates it is suitable for LWNIR light sources and has an extensive application prospect. Furthermore, the excitation peak shifts from 398 (NUV) to 454 nm (blue), which better matches the current highly commercialized NUV and blue LED chips, further highlighting its application potential. Both luminous intensity and FWHM change with increasing substitution, as depicted in Fig. 3(f). It can be observed that a higher luminous intensity can be obtained when the B sites are completely occupied by one type of cation. The luminous intensity decreases and the FWHM increases accordingly in the intermediate solid solution. That might be due to the lattice distortions and defects caused by the difference in ionic radius during the substitution process. These distortions and defects can result in the enhancement of phonon scattering, and the stronger electron–phonon coupling (EPC) effect increases the non-radiative transition of Ni2+ ions. Among them, Sr2ScTaO6:0.01Ni2+ phosphor has the highest emission intensity, followed by Sr2GaTaO6:0.01Ni2+ and Sr2ScSbO6:0.01Ni2+. Generally, an increase in Stokes shift will reduce the emission intensity. Nevertheless, researchers have shown that crystal symmetry also has an effect on luminous intensity.21,43–45 The reduction of symmetry is beneficial for breaking the forbidden transition of Ni2+, thereby enhancing luminescence. The Raman spectra of three samples are presented in Fig. S7 (ESI†). Multiple vibrational stretches of 50–210 cm−1 are assigned to the Sr–O polyhedra, while vibrational stretches of 400–480 cm−1 and 730–930 cm−1 are attributed to the [B′O6] and [B′′O6] octahedra, respectively. The shift of Raman peaks to lower wave numbers is related to the bond length changes before and after substitution.24,25,39,46 Generally, the stronger the chemical bond, the higher the corresponding molecular vibration frequency. It can be clearly seen that the Raman peaks of Sr2ScTaO6:0.01Ni2+ are more split and sharper, indicating that its internal structure exhibits lower symmetry. In order to investigate the sites occupied by Ni2+ doping, two samples of Sr2GaTaO6:0.01Ni2+ and Sr2ScTaO6:0.01Ni2+ were selected for analysis. The emission spectra of the two samples were tested at 77 and 298 K (Fig. S8, ESI†). The results show that the asymmetry of the spectral profile is more obvious at low temperatures. An asymmetric spectrum may indicate the presence of multiple luminescent centers. However, the excitation spectra and fluorescence attenuation curves of the two samples monitored at different wavelengths are almost identical. Additionally, TRPL testing is shown in Fig. 3(g). (the slight change in intensity around 1380 nm is caused by the instrument). TRPL mapping shows a single luminous center and a uniform attenuation trend. A similar phenomenon exists in Sr2ScSbO6:Fe3+,24 Ca2InSbO6:Fe3+,25 and CaLaMgSbO6:Ni2+.47 These results imply that Ni2+ is highly likely to occupy the Ga3+/Sc3+ sites.
The emission region of Ni2+ is closely related to the octahedral crystal field environment. The crystal field strength of Ni2+ in the octahedron can be described by the Tanabe–Sugano theory. The crystal field strength Dq and Racah parameter B can be calculated by the Formula (S5) and (S6) (ESI†).48 The Tanabe–Sugano energy level diagram in Fig. 3(h) can be used to represent the 3d8 energy level splitting of Ni2+. Dq/B is the crystal field parameter, and the strong or weak crystal field is distinguished by the Dq/B value (≈1.75) corresponding to the intersection of 3T2g(F) and 1Eg(D) energy levels. The average bond length, degree of [(Ga/Sc)O6] octahedral distortion, crystal field parameters, and the corresponding excitation and emission wavelength of representative solid solution phosphors are listed in Table 1. The Dq/B value decreases from 1.040 to 0.877, indicating that Ni2+ is in a weak crystal field environment and presents a broadband emission. Different crystal field parameters correspond to different energy values, and the 3T1g(P) excited state is much higher than the 3T2g(F) excited state and the 3A2g(F) ground state. The substitution engineering causes a gradual decrease in Dq/B, and both of the required energy decreases for electrons to transition from the 3A2g(F) ground state to the 3T1g(P) excited state and return from the 3T2g (F) excited state to the 3A2g(F) ground state. As a result, the excitation and emission spectra of phosphors show a red-shift phenomenon. Under the same condition, the crystal field strength Dq is inversely proportional to the bond length of the metal–oxygen ligand (Formula S7 (ESI†)).49 The ionic radius of Sc3+ is much larger than that of Ga3+. With the process of ion substitution, the lattice expansion causes the average bond length of Sc–O to be significantly larger than that of Ga–O. Moreover, the nephelauxetic effect has a significant impact on Racah parameter B and is negatively correlated with ionic electronegativity.50,51 The electronegativity of Sc (1.35) is less than that of Ga (1.81), resulting in a decrease in the average cation electronegativity after substitution. The combined effect of factors causes a decrease in the crystal field parameters after Sc3+ substitution for Ga3+, resulting in the emission red-shift of Ni2+. For Sb5+ substitution Ta5+, Sb5+ has a slightly smaller ionic radius than Ta5+, but they have a significant difference in electronegativity (Sb: 2.05; Ta: 1.5). We speculate that the introduction of Sb5+ causes strong attraction to the surrounding oxygen ion ligands, making the average bond length of Sb–O smaller than that of Ta–O. The adjacent [ScO6] octahedron shows a trend of twisting and stretching. With an increase in the Sc–O bond length, the emission of Ni2+ presents a further red-shift. Besides the above effects, the crystal field splitting is enhanced with the degree of octahedral distortion; the distortion of [(Ga/Sc)O6] can be expressed by the Formula (S8) (ESI†).52 With the substitution of Sc3+ and Sb5+, the distortion degree of [(Ga/Sc)O6] octahedron continues to increase, causing a larger crystal field splitting to reduce the emission energy. These results illustrate that the change in host components can markedly influence the crystal field environment, thereby affecting the luminescence efficiency and emission peak position of the doped ions. These properties provide an idea for Ni2+ emission tuning, which is expected to achieve higher quantum efficiency and longer wavelength emission of LWNIR phosphors by changing the composition of the host.
| Sample | D ave (Ga/Sc–O) | D ave (Ta/Sb–O) | D dis [(Ga/Sc)O6] | Dq (cm−1) | B (nm−1) | Dq/B | λ ex (nm) | λ em (nm) | FWHM (nm) |
|---|---|---|---|---|---|---|---|---|---|
| Sr2GaTaO6:0.01Ni2+ | 1.97825 | 1.979 | 0.0024 | 896.9 | 862.0 | 1.040 | 398 | 1295 | 242 |
| Sr2Ga0.5Sc0.5TaO6:0.01Ni2+ | 2.0431 | 1.9861 | 0.0232 | 862.1 | 851.6 | 1.012 | 409 | 1390 | 261 |
| Sr2ScTaO6:0.01Ni2+ | 2.0593 | 2.0186 | 0.0377 | 819.7 | 848.1 | 0.966 | 421 | 1460 | 252 |
| Sr2ScTa0.5Sb0.5O6:0.01Ni2+ | 2.0643 | 2.0177 | 0.0419 | 781.3 | 874.8 | 0.893 | 425 | 1520 | ≈300 |
| Sr2ScSbO6:0.01Ni2+ | 2.069 | 2.0113 | 0.0567 | 724.6 | 826.4 | 0.877 | 454 | 1665 | ≈255 |
It can be observed that as the temperature increases, the FWHM of the phosphors gradually increases (Fig. S10 (ESI†)). This is related to the strength of the EPC effect inside the crystal material. The EPC strength can be assessed by the changes in FWHM (Formula S10 (ESI†)).17 The calculated S values for Sr2GaTaO6:0.01Ni2+ and Sr2ScTaO6:0.01Ni2+ are 3.098 and 7.134, respectively. Generally, the activation energy depends on the strength of the EPC. In materials with weaker EPC strength, electrons returning to the ground state through non-radiative transition will overcome higher energy barriers and exhibit better luminous thermal stability.54 Meanwhile, the strong EPC leads to a larger Stokes shift and FWHM, resulting in more serious thermal quenching. EPC also reflects the dependence of thermal stability on structural rigidity. Materials with shorter bond lengths show better structural rigidity, which is conducive to improving the luminous thermal stability of phosphors.55 Therefore, the selection of the host structure cations is crucial for obtaining high performance LWNIR phosphors. The thermal stability values (I373K/I298K) of Ni2+ doped phosphors were investigated and are shown in Fig. 4(d). Our designed phosphors have advantages in thermal stability among the Ni2+ doped phosphors. Fig. 4(e) presents the fluorescence attenuation curves of three samples at room temperature. The attenuation curves of all samples can be better fitted by double exponents, possibly due to charge imbalance caused by Ni2+ doping, which leads to the existence of defect induced non-radiative transition attenuation paths in the crystals. The fluorescence lifetime can be calculated by the Formula S11 and S12 (ESI†).56 The average fluorescence lifetime of the three samples is 626, 613 and 460 μs, respectively. The substitution of Sc3+ and Sb5+ gradually increases the Stokes shift and decreases the fluorescence lifetime. Internal quantum efficiency (IQE) is also an essential factor in evaluating the luminescence properties of phosphors. The IQE measurements of Sr2GaTaO6:0.01Ni2+, Sr2ScTaO6:0.01Ni2+ and Sr2ScSbO6:0.01Ni2+ are displayed in Fig. S11 (ESI†) and evaluated as 25.6%, 22.3% and 34%, respectively. The comparison of Ni2+ doped phosphors in this work and previously reported phosphors is shown in Table 2. It can be deduced that the titled phosphors present greater advantages in luminous region and performance.
| Phosphors | λ ex (nm) | λ em (nm) | Emission (nm) | FWHM (nm) | I 373 K (%) | IQE (%) | Ref. |
|---|---|---|---|---|---|---|---|
| SrTiO3:Ni2+ | 365 | 1250 | 1000–1600 | 220 | ≈55 | 7.9 | 57 |
| ZnAl2O4:Ni2+ | 365 | 1251 | 1000–1600 | 232 | 50 | — | 58 |
| Mg3Ga2GeO8:Ni2+ | 395 | 1410 | 1100–1700 | 300 | 52.7 | 36.7 | 48 |
| Ga2O3:Ni2+ | 410 | 1455 | 1100–1700 | 298 | 19.2 | 31.2 | 59 |
| MgAl2O4:Ni2+ | 390 | 1230 | 900–1600 | 251 | ≈30 | 18.8 | 60 |
| MgTi2O5:Ni2+ | 395 | 1470 | 1200–1700 | 245 | 20 | 23.7 | 61 |
| Mg14Ge5O24:Ni2+ | 418 | 1430 | 1100–1700 | 278 | ≈60 | 38.5 | 62 |
| MgTa2O6:Ni2+ | 470 | 1620 | 1300–2000 | — | ≈10 | 25.62 | 63 |
| La2MgSnO6:Ni2+ | 425 | 1470 | 1200–1800 | 250 | ≈45 | — | 64 |
| Ba2MgWO6:Ni2+ | 365 | 1630 | 1200–2000 | 255 | ≈70 | 16.67 | 65 |
| Sr2MgMoO6:Ni2+ | 400 | 1400 | 1100–2000 | — | 26 | 39.78 | 66 |
| Ba2MgMoO6:Ni2+ | 400 | 1610 | 1200–2000 | — | 22 | 21.75 | 66 |
| Sr2GaTaO6:Ni2+ | 398 | 1295 | 1000–1700 | 242 | 68 | 25.6 | This work |
| Sr2ScTaO6:Ni2+ | 421 | 1460 | 1100–1900 | 252 | 46 | 22.3 | This work |
| Sr2ScSbO6:Ni2+ | 454 | 1665 | 1100–2100 | — | 44 | ≈34 | This work |
In order to verify further applications of phosphors, Sr2Ga1−xScxTa1−ySbyO6:0.01Ni2+ solid solution phosphors were mixed in equal proportion and integrated into a 395 nm NUV chip. As illustrated in Fig. 5(g), the spectrum with FWHM up to 368 nm is displayed, covering almost the entire NIR-II region (the abnormal intensity at 1400 nm is caused by the absorption of A glue and B glue). Such a wide spectral range is extremely rare. The photos in the illustration express the conditions without and with current taking under a normal camera or NIR camera. Fig. 5(h) shows a photo of NIR light passing through a finger captured by the NIR camera. The clear blood vessel image highlights its application in biological imaging. Moreover, the location of the campus card chip can be accurately reflected by the NIR camera. The series of results prove that our phosphors present very broad application prospects.
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d5tc00613a |
| This journal is © The Royal Society of Chemistry 2025 |