Reversible modulation of critical electric fields for a field-induced ferroelectric effect with field-cycling in ZrO2 thin films

Jonghoon Shin, Dong Hoon Shin, Kyung Do Kim, Haengha Seo, Kun Hee Ye, Jeong Woo Jeon, Tae Kyun Kim, Heewon Paik, Haewon Song, Suk Hyun Lee, Jung-Hae Choi and Cheol Seong Hwang

J. Mater. Chem. C, 2024, 12, 15423
DOI: 10.1039/D4TC03024A

Improvement of leakage and fatigue properties of Hf0.5Zr0.5O2 thin film by embedding ultra-thin Al2O3 interlayer

Dao Wang, Zihao Lu, Jianing Wang, Yabing Sun, Yan Zhang and Danfeng He

J Mater Sci, 2025, 60, 328
DOI: 10.1007/s10853-024-10527-5

Impact of Tetrakis(ethylmethylamino)-based precursor and oxygen source selection on atomic layer deposition of ferroelectric HfxZr1-xO2 thin films

Jin-Hyun Kim, Siun Song, Dushyant M. Narayan, Dan N. Le, Thi Thu Huong Chu, Minjong Lee, Geon Park, Seungbin Lee, Jongmug Kang, Jeffrey Spiegelman, Marshall Benham, Si Joon Kim, Rino Choi and Jiyoung Kim

Applied Surface Science, 2025, 686, 162197
DOI: 10.1016/j.apsusc.2024.162197

Internal strain identification of seed-layered ZrO2, aluminum-, and yttrium-doped ZrO2 thin films via grazing incidence x-ray diffraction

Haengha Seo, Han Sol Park, Seong Tak Cho, Jonghoon Shin, Junil Lim, Tae Kyun Kim, Heewon Paik, Haewon Song and Cheol Seong Hwang

Journal of Applied Physics, 2024, 136
DOI: 10.1063/5.0217554

Reservoir computing utilizing HfO2‐based ferroelectric neuromorphic devices with WOx nano insertion layers for efficient speech recognition

Xiaoheng Zhou, Liwei Liang, Yuning Gu, Yuzhi Fang, Zibo Zhou and He Tian

InfoMat, 2025
DOI: 10.1002/inf2.70068

Enhancing the ferroelectric performance of Hf0.5Zr0.5O2 films by optimizing the incorporation of Al dopant

Xin Liu, Weidong Zhao, Jiawei Wang, Lulu Yao, Man Ding and Yonghong Cheng

Nanotechnology, 2025, 36, 135704
DOI: 10.1088/1361-6528/adaf2c

Capacitance Boosting of Antiferroelectric‐Hf0.2Zr0.8O2/Al2O3 Blocking Layer Using Y2O3 Interfacial Layer for Charge Trap Flash Memory

Jehoon Lee, Deokjoon Eom, Heesoo Lee, Woohui Lee, Joohee Oh, Changyu Park and Hyoungsub Kim

Physica Rapid Research Ltrs, 2025, 19
DOI: 10.1002/pssr.202400332

Ultra-high energy storage performance of field-induced ferroelectric Al2O3-inserted Hf0.5Zr0.5O2 thin films for electrostatic supercapacitors

Jonghoon Shin, Dong Hoon Shin, Haengha Seo, Kyung Do Kim, Seungheon Choi, Tae Kyun Kim, Heewon Paik, Haewon Song, Seungyong Byun, In Soo Lee and Cheol Seong Hwang

Energy Storage Materials, 2025, 79, 104306
DOI: 10.1016/j.ensm.2025.104306

Enhanced plasma resistance of uniform ALD-Y2O3 thin films for chamber components’ coatings

Jun-Hyeok Jeon, Sun Gil Kim, Hyun-Mi Kim, Hye-Young Kim, Chang-sub Park, Yong Soo Lee, Seul-Gi Kim, Hyeongkeun Kim and Jae-Boong Choi

Journal of Vacuum Science & Technology A, 2025, 43
DOI: 10.1116/6.0004256

Effect of HZO Thickness Scaling in the Bilayer Ferroelectric Tunnel Junction

Luca Carpentieri, Thomas Mikolajick and Stefan Slesazeck

ACS Appl. Electron. Mater., 2025, 7, 5008
DOI: 10.1021/acsaelm.5c00469