Issue 19, 2024

MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

Abstract

Organic field-effect floating-gate transistors combine the advantages of organic semiconductor materials to produce more functionality by sensing changes in photogenerated carriers, allowing data to be stored efficiently. Herein, a novel metal–organic framework (MOF) floating gate optical memory transistor was engineered using a two-dimensional molecular crystal (2DMC) as the active layer via a layer-by-layer assembly technique. Highly uniform ultra-thin MOF films were synthesized at the gas–liquid interface and subsequently transferred to serve as the floating gate layer. The device exhibited a substantial memory window of 36 V upon optical pulse stimulation and maintained its performance without degradation after 100 cycles of optical programming and electrical erasure testing, demonstrating exceptional durability. Moreover, it displayed remarkable current-holding characteristics about 10 000 seconds under varying light intensities and achieved multi-level memory functionality with significant current differences. These findings substantiate its potential commercial viability in high-performance information memory devices.

Graphical abstract: MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

Supplementary files

Article information

Article type
Paper
Submitted
30 Janv. 2024
Accepted
13 Apr. 2024
First published
17 Apr. 2024

J. Mater. Chem. C, 2024,12, 6943-6951

MOF-enabled high-density 2D molecular crystal optoelectronic memory transistor with floating gate architecture

S. Gao, Y. Ren, D. Zhang, X. Wu, Y. Xie, L. Sun, R. Li, F. Yang and W. Hu, J. Mater. Chem. C, 2024, 12, 6943 DOI: 10.1039/D4TC00421C

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