Issue 40, 2023

Plasma-free metal-assisted chemical etching producing three-dimensional gallium nitride structures

Abstract

Gallium nitride (GaN) is a third-generation wide bandgap semiconductor well-suited for power electronics and ultraviolet optoelectronics. Traditional plasma-based dry etching is widely used for producing three-dimensional (3D) GaN structures, nevertheless resulting in plasma-induced surface damage, which is unfavorable for device performance. This paper seeks to provide a plasma-free metal-assisted chemical etching (MacEtch) method as an alternative to the traditional dry etching method to fabricate 3D GaN structures. As a novel wet etching method, MacEtch is able to produce various GaN structures with dimensions from several to hundreds of micrometers with a nearly vertical sidewall profile. The formation process and mechanism of the GaN structures, and the influence of the etchant components are carefully studied. By means of potassium hydroxide post-treatment, GaN structures with vertical and smooth sidewalls are produced. MacEtch of GaN in this work has demonstrated simplicity and versatility for fabricating a wide range of 3D GaN structures with the etching mechanism fully elucidated.

Graphical abstract: Plasma-free metal-assisted chemical etching producing three-dimensional gallium nitride structures

Supplementary files

Article information

Article type
Paper
Submitted
01 Aug. 2023
Accepted
11 Sept. 2023
First published
15 Sept. 2023

J. Mater. Chem. C, 2023,11, 13707-13713

Plasma-free metal-assisted chemical etching producing three-dimensional gallium nitride structures

Y. Liao, Y. J. Kim, S. An and M. Kim, J. Mater. Chem. C, 2023, 11, 13707 DOI: 10.1039/D3TC02731G

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