Issue 9, 2022

Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

Abstract

A GaOOH/Ga2O3 heterojunction was obtained by a one-step annealing treatment at a certain temperature. The solar blind photoresponse performance of the GaOOH/Ga2O3 heterojunction was characterized through photoelectrochemical detectors, providing a simple and effective method for pure solar-blind ultraviolet detection. The results showed that the maximum responsivity of the α-GaOOH/α-Ga2O3 heterojunction detector is 0.29 mA W−1 at 250 nm, which is 370% and 145% higher than that of the α-GaOOH and α-Ga2O3 detectors, respectively. The calculated solar-blind/visible detection ratio and light-to-dark current ratio of the detector are also significantly improved compared with the α-Ga2O3 and α-GaOOH detectors, reflecting better pure solar-blind ultraviolet detection performance. The photoresponse mechanism has been studied systemically.

Graphical abstract: Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

Article information

Article type
Paper
Submitted
22 Nov. 2021
Accepted
25 Janv. 2022
First published
02 Febr. 2022

CrystEngComm, 2022,24, 1789-1794

Study on the evolution from α-GaOOH to α-Ga2O3 and solar-blind detection behavior of an α-GaOOH/α-Ga2O3 heterojunction

Y. Zhang, S. Jiao, J. Zhang, S. Liu, D. Wang, S. Gao and J. Wang, CrystEngComm, 2022, 24, 1789 DOI: 10.1039/D1CE01559A

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