Issue 40, 2015

Self-assisted nucleation and growth of [010]-oriented Sb2Se3 whiskers: the crystal structure and thermoelectric properties

Abstract

The layered-chalcogenide Sb2Se3 has potential for use in photovoltaic devices and thermoelectric coolers, but its practical applications are restricted as bulk Sb2Se3 exhibits high electrical resistivity (ρ). Herein, we synthesize n-type Te-doped Sb2Se3 whiskers with the average feature size of 1 cm length and 200 μm width via a self-assisted vapor–solid (VS) method. In particular, based on the crystallographic identification using techniques of powder X-ray diffraction and transmission electron microscopy, the Te-doped Sb2Se3 whisker grows along a preferred orientation of [010], which is rarely reported for an orthorhombic structure due to the fact that the bonding energy along the c-axis is much stronger. The [010]-oriented Sb2Se3 whisker shows enhanced electrical conductivity, especially compared with its bulk form, and exhibits a high Seebeck value (S) within 300–400 K, resulting in a peak power factor (S2/ρ) of ∼7.6 (μW m K−2) at 350 K. The peak PF value is 104 higher than that of Sb2Se3 bulk and is comparable to that of Sb2Se3 nanotubes, respectively, giving rise to the possibility of utilizing Sb2Se3 in the application of thermoelectric coolers.

Graphical abstract: Self-assisted nucleation and growth of [010]-oriented Sb2Se3 whiskers: the crystal structure and thermoelectric properties

Article information

Article type
Paper
Submitted
14 Maijs 2015
Accepted
24 Jūl. 2015
First published
24 Jūl. 2015

J. Mater. Chem. C, 2015,3, 10488-10493

Author version available

Self-assisted nucleation and growth of [010]-oriented Sb2Se3 whiskers: the crystal structure and thermoelectric properties

H. Wu, P. Lee, F. Chiu, S. Chen and Y. Chen, J. Mater. Chem. C, 2015, 3, 10488 DOI: 10.1039/C5TC01364J

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements