Issue 39, 2013
From the journal:

Chemical Communications

Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature†‡

Pichaya Pattanasattayavong,§a   Guy Olivier Ngongang Ndjawa,§b   Kui Zhao,§b   Kang Wei Chou,b   Nir Yaacobi-Gross,a   Brian C. O'Regan,c   Aram Amassianb  and  Thomas D. Anthopoulos*a  

* Corresponding authors

a Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, UK
E-mail: t.anthopoulos@ic.ac.uk
Fax: +44 (0)2075942077
Tel: +44 (0)2075946669

b Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia

c Department of Chemistry and Centre for Plastic Electronics, Imperial College London, London SW7 2AZ, UK

Abstract

The optical, structural and charge transport properties of solution-processed films of copper(I) thiocyanate (CuSCN) are investigated in this work. As-processed CuSCN films of ∼20 nm in thickness are found to be nano-crystalline, highly transparent and exhibit intrinsic hole transporting characteristics with a maximum field-effect mobility in the range of 0.01–0.1 cm2 V−1 s−1.

Graphical abstract: Electric field-induced hole transport in copper(i) thiocyanate (CuSCN) thin-films processed from solution at room temperature

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Article information

DOI
https://doi.org/10.1039/C2CC37065D
Article type
Communication
Submitted
28 Sept. 2012
Accepted
21 Nov. 2012
First published
22 Nov. 2012

Chem. Commun., 2013,49, 4154-4156

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Electric field-induced hole transport in copper(I) thiocyanate (CuSCN) thin-films processed from solution at room temperature

P. Pattanasattayavong, G. O. N. Ndjawa, K. Zhao, K. W. Chou, N. Yaacobi-Gross, B. C. O'Regan, A. Amassian and T. D. Anthopoulos, Chem. Commun., 2013, 49, 4154 DOI: 10.1039/C2CC37065D

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