Issue 7, 2024

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Abstract

Hybrid halide perovskites are attractive candidates for resistive switching memories in neuromorphic computing applications due to their mixed ionic-electronic conductivity. Moreover, their exceptional optoelectronic characteristics make them effective as semiconductors in photovoltaics, opening perspectives for self-powered memory elements. These devices, however, remain unexploited, which is related to the variability in their switching characteristics, weak endurance, and retention, which limit their performance and practical use. To address this challenge, we applied low-dimensional perovskite capping layers onto 3D mixed halide perovskites using two perfluoroarene organic cations, namely (perfluorobenzyl)ammonium and (perfluoro-1,4-phenylene)dimethylammonium iodide, forming Ruddlesden–Popper and Dion–Jacobson 2D perovskite phases, respectively. The corresponding mixed-dimensional perovskite heterostructures were used to fabricate resistive switching memories based on perovskite solar cell architectures, showing that the devices based on perfluoroarene heterostructures exhibited enhanced performance and stability in inert and ambient air atmosphere. This opens perspectives for multidimensional perovskite materials in durable self-powered memory elements in the future.

Graphical abstract: Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

Supplementary files

Article information

Article type
Communication
Submitted
09 Marts 2024
Accepted
03 Maijs 2024
First published
20 Maijs 2024
This article is Open Access
Creative Commons BY-NC license

Nanoscale Horiz., 2024,9, 1146-1154

Resistive switching memories with enhanced durability enabled by mixed-dimensional perfluoroarene perovskite heterostructures

M. Loizos, K. Rogdakis, W. Luo, P. Zimmermann, A. Hinderhofer, J. Lukić, M. Tountas, F. Schreiber, J. V. Milić and E. Kymakis, Nanoscale Horiz., 2024, 9, 1146 DOI: 10.1039/D4NH00104D

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