Issue 10, 2024

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Abstract

Ferroelectric memory devices such as ferroelectric memristors, ferroelectric tunnel junctions, and field-effect transistors are considered among the most promising candidates for neuromorphic computing devices. The promise arises from their defect-independent switching mechanism, low energy consumption and high power efficiency, and important properties being aimed for are reliable switching at high speed, excellent endurance, retention, and compatibility with complementary metal–oxide–semiconductor (CMOS) technology. Binary or doped binary materials have emerged over conventional complex-composition ferroelectrics as an optimum solution, particularly in terms of CMOS compatibility. The current state-of-the-art route to achieving superlative ferroelectric performance of binary oxides is to induce ferroelectricity at the nanoscale, e.g., in ultra-thin films of doped HfO2, ZrO2, Zn1−xMgxO, Al−xScxN, and Bi1−xSmxO3. This short review article focuses on the materials science of emerging new ferroelectric materials, including their different properties such as remanent polarization, coercive field, endurance, etc. The potential of these materials is discussed for neuromorphic applications.

Graphical abstract: Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

Article information

Article type
Review Article
Submitted
09 Febr. 2024
Accepted
27 Febr. 2024
First published
27 Febr. 2024
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2024,11, 2355-2371

Growth of emergent simple pseudo-binary ferroelectrics and their potential in neuromorphic computing devices

A. R. Jayakrishnan, J. S. Kim, M. Hellenbrand, L. S. Marques, J. L. MacManus-Driscoll and J. P. B. Silva, Mater. Horiz., 2024, 11, 2355 DOI: 10.1039/D4MH00153B

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