Issue 10, 2024

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Abstract

Black phosphorus (BP) field-effect transistors with ultrathin channels exhibit unipolar p-type electrical conduction over a wide range of temperatures and pressures. Herein, we study a device that exhibits mobility up to 100 cm2 V−1 s−1 and a memory window up to 1.3 μA. Exposure to a supercontinuum white light source reveals that negative photoconductivity (NPC) and positive photoconductivity (PPC) coexist in the same device. Such behavior is attributed to the chemisorbed O2 molecules, with a minor role of physisorbed H2O molecules. The coexistence of NPC and PPC can be exploited in neuromorphic vision sensors, requiring the human eye retina to process the optical signals through alerting and protection (NPC), adaptation (PPC), followed by imaging and processing. Our results open new avenues for the use of BP and other two-dimentional (2D) semiconducting materials in transistors, memories, and neuromorphic vision sensors for advanced applications in robotics, self-driving cars, etc.

Graphical abstract: Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

Supplementary files

Article information

Article type
Communication
Submitted
08 Janv. 2024
Accepted
04 Marts 2024
First published
04 Marts 2024
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2024,11, 2397-2405

Memory effect and coexistence of negative and positive photoconductivity in black phosphorus field effect transistor for neuromorphic vision sensors

A. Kumar, K. Intonti, L. Viscardi, O. Durante, A. Pelella, O. Kharsah, S. Sleziona, F. Giubileo, N. Martucciello, P. Ciambelli, M. Schleberger and A. Di Bartolomeo, Mater. Horiz., 2024, 11, 2397 DOI: 10.1039/D4MH00027G

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