Issue 2, 2024

A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision

Abstract

In-sensor reservoir computing (RC) is a promising technology to reduce power consumption and training costs of machine vision systems by processing optical signals temporally. This study demonstrates a high-dimensional in-sensor RC system with optoelectronic memristors to enhance the performance of the in-sensor RC system. Because optoelectronic memristors can respond to both optical and electrical stimuli, optical and electrical masks are proposed to improve the dimensionality and performance of the in-sensor RC system. An optical mask is employed to regulate the wavelength of light, while an electrical mask is used to control the initial conductance of zinc oxide optoelectronic memristors. The distinct characteristics of these two masks contribute to the representation of various distinguishable reservoir states, making it possible to implement diverse reservoir configurations with minimal correlation and to increase the dimensionality of the in-sensor RC system. Using the high-dimensional in-sensor RC system, handwritten digits are successfully classified with an accuracy of 94.1%. Furthermore, human action pattern recognition is achieved with a high accuracy of 99.4%. These high accuracies are achieved with the use of a single-layer readout network, which can significantly reduce the network size and training costs.

Graphical abstract: A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision

Supplementary files

Article information

Article type
Communication
Submitted
30 Sept. 2023
Accepted
06 Nov. 2023
First published
15 Nov. 2023

Mater. Horiz., 2024,11, 499-509

A high-dimensional in-sensor reservoir computing system with optoelectronic memristors for high-performance neuromorphic machine vision

Y. H. Jang, J. Han, S. Moon, S. K. Shim, J. Han, S. Cheong, S. H. Lee and C. S. Hwang, Mater. Horiz., 2024, 11, 499 DOI: 10.1039/D3MH01584J

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