Issue 37, 2023

Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems

Abstract

A heterogeneous bimetallic system (HBS), composed of two metallic thin films with inherently different Fermi levels, is potentially usable for the fine tuning of interfacial charge dynamics. Here, we propose a viable methodology for adjusting the turn-on voltage (Vto) of Schottky-barrier TFTs (SB-TFTs) based on new insights into the utilization of the physical properties of metallic materials. HBS-based thin films are demonstrated to provide a designable workfunction at a structural level. The acquired spatial gradients of the Fermi level, formed in the HBS, are considered a critical factor for achieving the structurally designable workfunction. During device testing, a significant correlation is observed between the Vto of SB-TFTs and the workfunction of their HBS-based source–drain (SD) electrodes. The ability to tailor the Vto property through the HBS strategy is attributed to the variation in workfunction of the HBS-based SD electrodes, which modulates the charge injection across the Schottky barrier. The Vto variation is extensively investigated by exploring various structural aspects of the HBS-based SD electrodes. Lastly, the HBS strategy enables clear off-states in both n-type and p-type SB-TFTs and their balanced electrical performances, through which a complementary inverter is successfully demonstrated.

Graphical abstract: Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems

  • This article is part of the themed collection: #MyFirstJMCC

Supplementary files

Article information

Article type
Paper
Submitted
20 Jūl. 2023
Accepted
27 Aug. 2023
First published
30 Aug. 2023

J. Mater. Chem. C, 2023,11, 12675-12684

Guiding charge injection in Schottky-barrier transistors through the spatial Fermi-level gradients of heterogeneous bimetallic systems

M. Kim, W. Kim, C. Kim, J. Kwon and M. Kim, J. Mater. Chem. C, 2023, 11, 12675 DOI: 10.1039/D3TC02561F

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