Issue 5, 2023

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Abstract

We demonstrate the programmable light intensity of a micro-LED by compensating threshold voltage variability of thin-film transistors (TFTs) by introducing a non-volatile programmable ferroelectric material, HfZrO2 (HZO) into the gate stack of the TFT. We fabricated an amorphous ITZO TFT, ferroelectric TFTs (FeTFTs), and micro-LEDs and verified the feasibility of our proposed current-driving active matrix circuit. Importantly, we successfully present the programmed multi-level lighting of the micro-LED, utilizing partial polarization switching in the a-ITZO FeTFT. We expect that this approach will be highly promising for the next-generation display technology, replacing complicated threshold voltage compensation circuits with a simple a-ITZO FeTFT.

Graphical abstract: Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

Article information

Article type
Paper
Submitted
17 Okt. 2022
Accepted
06 Dec. 2022
First published
12 Dec. 2022
This article is Open Access
Creative Commons BY-NC license

Nanoscale Adv., 2023,5, 1316-1322

Demonstration of programmable light intensity of a micro-LED with a Hf-based ferroelectric ITZO TFT for Mura-free displays

T. Jin, S. Kim, J. Han, D. Ahn, S. U. An, T. H. Noh, X. Sun, C. J. Kim, J. Park and Y. Kim, Nanoscale Adv., 2023, 5, 1316 DOI: 10.1039/D2NA00713D

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