Issue 4, 2023

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Abstract

Interfaces in complex oxides give rise to fascinating new physical phenomena arising from the interconnected spin, lattice, charge and orbital degrees of freedom. Most commonly, interfaces are engineered in epitaxial superlattice films. Of growing interest also are epitaxial vertically aligned nanocomposite films where interfaces form by self-assembly. These two thin film forms offer different capabilities for materials tuning and have been explored largely separately from one another. Ferroics (ferroelectric, ferromagnetic, multiferroic) are among the most fascinating phenomena to be manipulated using interface effects. Hence, in this review we compare and contrast the ferroic properties that arise in these two different film forms, highlighting exemplary materials combinations which demonstrate novel, enhanced and/or emergent ferroic functionalities. We discuss the origins of the observed functionalities and propose where knowledge can be translated from one materials form to another, to potentially produce new functionalities. Finally, for the two different film forms we present a perspective on underexplored/emerging research directions.

Graphical abstract: Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

Article information

Article type
Review Article
Submitted
15 Dec. 2022
Accepted
16 Febr. 2023
First published
21 Febr. 2023
This article is Open Access
Creative Commons BY license

Mater. Horiz., 2023,10, 1060-1086

Interface-related phenomena in epitaxial complex oxide ferroics across different thin film platforms: opportunities and challenges

J. L. MacManus-Driscoll, R. Wu and W. Li, Mater. Horiz., 2023, 10, 1060 DOI: 10.1039/D2MH01527G

This article is licensed under a Creative Commons Attribution 3.0 Unported Licence. You can use material from this article in other publications without requesting further permissions from the RSC, provided that the correct acknowledgement is given.

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