Issue 18, 2023

Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Abstract

A one-step, simple, scalable, reproducible, low-temperature, and in situ solvothermal deposition method has been established for the growth of Sb2S3 on FTO using [Sb{S2P{O(Pr)2}3] as a single source precursor without a binding agent. XRD, Raman, SAED, and HRTEM results revealed the crystalline orthorhombic stibnite phase. The sheaf-like Sb2S3 exhibited a band gap energy of 1.72 eV. The Sb2S3 film is uniform and well-adhered and is further developed as a novel resistive random-access memory material. The Ag/Sb2S3/FTO memristive device demonstrated low operating voltage and the performance of the device over multiple cycles revealed dependable bipolar resistive switching behaviour and an ON/OFF ratio of ca. 10.

Graphical abstract: Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

Supplementary files

Article information

Article type
Paper
Submitted
01 Maijs 2023
Accepted
01 Aug. 2023
First published
16 Aug. 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 4119-4128

Solution-based in situ deposition of Sb2S3 from a single source precursor for resistive random-access memory devices

S. S. Harke, T. Zhang, R. Huang and C. Gurnani, Mater. Adv., 2023, 4, 4119 DOI: 10.1039/D3MA00205E

This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence. You can use material from this article in other publications, without requesting further permission from the RSC, provided that the correct acknowledgement is given and it is not used for commercial purposes.

To request permission to reproduce material from this article in a commercial publication, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party commercial publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements