Issue 8, 2023

Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues

Abstract

Memristors, a two-terminal device, have a resistance that can be changed and retained in two or more different states when subjected to electrical stresses. This unique function makes memristors now an attractive area of research for next-generation electronic devices such as memory and advanced computation. However, credible characterization methods for memristors are not fully established yet to understand fundamental working mechanisms and objectively evaluate figures of merit performance. This review encompasses various characterization methods from materials to electrical characteristics to identify the fundamentals of memristor operations. Meanwhile, large performance variation is the main bottleneck hindering the adoption of this class of devices in practical applications. Thus, the second part of this article focuses on the types of variation and other reliability issues of memristors. Possible strategies to enhance reliability are suggested as well. Topics covered in this review on memristors’ characterization techniques and reliability are of significant relevance to many studies that seek to advance the state of the art in electronic devices and systems towards neuromorphic computing.

Graphical abstract: Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues

Article information

Article type
Review Article
Submitted
13 Febr. 2023
Accepted
23 Marts 2023
First published
31 Marts 2023
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2023,4, 1850-1875

Enhancing memristor fundamentals through instrumental characterization and understanding reliability issues

F. Qin, Y. Zhang, H. W. Song and S. Lee, Mater. Adv., 2023, 4, 1850 DOI: 10.1039/D3MA00069A

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