Issue 7, 2022

A two-dimensional polymer memristor based on conformational changes with tunable resistive switching behaviours

Abstract

In this work, through rational monomer design we integrated the conformational change mechanism into a two-dimensional covalent polymer and implemented 3 different low-power memory behaviors on the same device by tuning the compliance current (ICC), including nonvolatile write-once-read-many-times (WORM) memory behaviour, nonvolatile FLASH memory behaviour and volatile dynamic random access memory (DRAM) behaviour. Furthermore, 2DP-based memory devices exhibit excellent flexibility and thermal stability, which is a desirable property for applications in wearable electronics and a high temperature environment. Finally, the conformation-induced conductance switching under an electric field was confirmed by UV-vis spectra. The differences in memory behaviour were attributed to the inherent differences in the degree of regioregularity and ease of the conformational relaxation of the field-induced rearrangement of carbazole groups.

Graphical abstract: A two-dimensional polymer memristor based on conformational changes with tunable resistive switching behaviours

Supplementary files

Article information

Article type
Paper
Submitted
07 Sept. 2021
Accepted
28 Okt. 2021
First published
29 Okt. 2021

J. Mater. Chem. C, 2022,10, 2631-2638

A two-dimensional polymer memristor based on conformational changes with tunable resistive switching behaviours

Y. Song, G. Feng, L. Wu, E. Zhang, C. Sun, D. Fa, Q. Liang, S. Lei, X. Yu and W. Hu, J. Mater. Chem. C, 2022, 10, 2631 DOI: 10.1039/D1TC04248C

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