Issue 21, 2022

Experimental evidence of ion migration in aged inorganic perovskite solar cells using non-destructive RBS depth profiling

Abstract

Hybrid halide perovskites have made breakthroughs in a range of optoelectronic devices due to their favorable properties. Perovskites show mixed ionic electronic conductivity, which leads to current–voltage transients at timescales of milliseconds to hours and is responsible for hysteresis in the devices. Under the device-operating conditions, ions present in the bulk of the perovskites migrate towards the electrodes due to electrostatic effects, react with the interfacial layers and, thus, deteriorate the device performance and stability. Most experimental techniques used for probing ion migration in perovskites are indirect or destructive. In this work, we use Rutherford back scattering (RBS), which is a non-destructive technique, to investigate the elemental composition profile and interface diffusion between various layers to disentangle the extrinsic and intrinsic ion migration in inorganic halide perovskites (IHPs, e.g., CsPbI2Br). The experimental results suggest that I ions are the most mobile and diffuse into adjacent layers in the CsPbI2Br-based inverted perovskite solar cells, followed by Cs+ ions. We also show that oxygen leads to intrinsic and extrinsic ion migration and that ion migration takes place in aged devices even in the absence of external stress.

Graphical abstract: Experimental evidence of ion migration in aged inorganic perovskite solar cells using non-destructive RBS depth profiling

Supplementary files

Article information

Article type
Paper
Submitted
22 Febr. 2022
Accepted
05 Aug. 2022
First published
06 Aug. 2022
This article is Open Access
Creative Commons BY-NC license

Mater. Adv., 2022,3, 7846-7853

Experimental evidence of ion migration in aged inorganic perovskite solar cells using non-destructive RBS depth profiling

T. Hussain, K. Fatima, A. Anjum, T. A. Abbas, I. Ahmad, A. Fakharuddin and M. Sultan, Mater. Adv., 2022, 3, 7846 DOI: 10.1039/D2MA00199C

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