Issue 24, 2022

Atmospheric atomic layer deposition of SnO2 thin films with tin(ii) acetylacetonate and water

Abstract

Due to its unique optical, electrical, and chemical properties, tin dioxide (SnO2) thin films attract enormous attention as a potential material for gas sensors, catalysis, low-emissivity coatings for smart windows, transparent electrodes for low-cost solar cells, etc. However, the low-cost and high-throughput fabrication of SnO2 thin films without producing corrosive or toxic by-products remains challenging. One appealing deposition technique, particularly well-adapted to films presenting nanometric thickness is atomic layer deposition (ALD). In this work, several metalorganic tin-based complexes, namely, tin(IV) tert-butoxide, bis[bis(trimethylsilyl)amino] tin(II), dibutyltin diacetate, tin(II) acetylacetonate, tetrakis(dimethylamino) tin(IV), and dibutyltin bis(acetylacetonate), were explored thanks to DFT calculations. Our theoretical calculations suggest that the three last precursors are very appealing for ALD of SnO2 thin films. The potential use of these precursors for atmospheric-pressure spatial atomic layer deposition (AP-SALD) is also discussed. For the first time, we experimentally demonstrate the AP-SALD growth of SnO2 thin films using tin(II) acetylacetonate (Sn(acac)2) and water. We observe that Sn(acac)2 exhibits efficient ALD activity with a relatively large ALD temperature window (140–200 °C), resulting in a growth rate of 0.85 ± 0.03 Å per cyc. XPS analyses show a single Sn 3d5/2 characteristic peak for Sn4+ at 486.8 ± 0.3 eV, indicating that a pure SnO2 phase is obtained within the ALD temperature window. The as-deposited SnO2 thin films are in all cases amorphous, and film conductivity increases with the deposition temperature. Hall effect measurements confirm the n-type nature of SnO2 with a free electron density of about 8 × 1019 cm−3, electron mobility up to 11.2 cm2 V−1 s−1, and resistivity of 7 × 10−3 Ω cm for samples deposited at 270 °C.

Graphical abstract: Atmospheric atomic layer deposition of SnO2 thin films with tin(ii) acetylacetonate and water

Supplementary files

Article information

Article type
Paper
Submitted
08 Maijs 2022
Accepted
27 Maijs 2022
First published
07 Jūn. 2022

Dalton Trans., 2022,51, 9278-9290

Atmospheric atomic layer deposition of SnO2 thin films with tin(II) acetylacetonate and water

V. H. Nguyen, M. Akbari, A. Sekkat, H. T. T. Ta, J. Resende, C. Jiménez, K. P. Musselman and D. Muñoz-Rojas, Dalton Trans., 2022, 51, 9278 DOI: 10.1039/D2DT01427K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements