Issue 42, 2021

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Abstract

The great interest in aluminium nitride thin films has been attributed to their excellent dielectric, thermal and mechanical properties. Here we present the results of amorphous AlN films obtained by atomic layer deposition. We used trimethylaluminum and monomethylhydrazine as the precursors at a deposition temperature of 375–475 °C. The structural and mechanical properties and chemical composition of the synthesized films were investigated in detail by X-ray diffraction, X-ray photoelectron spectroscopy, electron and probe microscopy and nanoindentation. The obtained films were compact and continuous, exhibiting amorphous nature with homogeneous in-depth composition, at an oxygen content of as low as 4 at%. The mechanical properties were comparable to those of AlN films produced by other techniques.

Graphical abstract: Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

Article information

Article type
Paper
Submitted
30 Jūl. 2021
Accepted
13 Sept. 2021
First published
13 Sept. 2021

Dalton Trans., 2021,50, 15062-15070

Amorphous AlN films grown by ALD from trimethylaluminum and monomethylhydrazine

R. G. Parkhomenko, O. De Luca, Ł. Kołodziejczyk, E. Modin, P. Rudolf, D. Martínez Martínez, L. Cunha and M. Knez, Dalton Trans., 2021, 50, 15062 DOI: 10.1039/D1DT02529E

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