Issue 35, 2021

The synthesis and formation mechanism of nonpolar InN nanoplates

Abstract

High-crystal-quality nonpolar indium nitride (InN) nanoplates were synthesized via deploying controllable chemical vapor deposition (CVD) technology using the M-plane of GaN nanowires (NWs) as a template, with features creating a potential advantage for their use in terahertz emitter/detector devices. The formation of the 2D InN nanosheets may have been due to self-limiting epitaxial growth, which is in turn explained by lattice induction theory and surface distortion effects.

Graphical abstract: The synthesis and formation mechanism of nonpolar InN nanoplates

Supplementary files

Article information

Article type
Communication
Submitted
27 Jūl. 2021
Accepted
07 Aug. 2021
First published
09 Aug. 2021

CrystEngComm, 2021,23, 5976-5981

The synthesis and formation mechanism of nonpolar InN nanoplates

W. Song, T. Li, L. Zhang, W. Zhu and L. Wang, CrystEngComm, 2021, 23, 5976 DOI: 10.1039/D1CE00981H

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