Issue 6, 2020

Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

Abstract

We present a comprehensive study of bulk GeS optical properties and their anisotropy, by investigation of the fundamental band gap of the material and the energetically higher direct transitions. Optical absorption and photoreflectance measurements allowed us to establish the indirect gap of GeS at E0 = 1.56 eV at room temperature, and closely-lying direct transitions at E1 = 1.59 eV and E2 = 1.64 eV. Polarization-resolved measurements revealed that E1 is polarized along the armchair crystallographic direction and E2 is polarized along the zigzag direction. Finally, the experimental results are discussed in terms of first-principles calculations, which allowed us to assign all the optically active transitions in the ZΓY region of the Brillouin zone.

Graphical abstract: Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

Supplementary files

Article information

Article type
Paper
Submitted
30 Marts 2020
Accepted
26 Jūl. 2020
First published
14 Aug. 2020
This article is Open Access
Creative Commons BY license

Mater. Adv., 2020,1, 1886-1894

Anisotropic optical properties of GeS investigated by optical absorption and photoreflectance

A. Tołłoczko, R. Oliva, T. Woźniak, J. Kopaczek, P. Scharoch and R. Kudrawiec, Mater. Adv., 2020, 1, 1886 DOI: 10.1039/D0MA00146E

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