Issue 3, 2019

A ZnO/porous GaN heterojunction and its application as a humidity sensor

Abstract

A heterojunction of ZnO/porous GaN (ZnO/PGAN) was fabricated and directly applied to a diode-type humidity sensor. ZnO disks were loaded onto PGAN using a spraying process. The structure and surface morphology of the ZnO/PGAN were characterized using X-ray diffraction and scanning electron microscopy. The heterojunction displayed an excellent diode nature, which was investigated using photoluminescence spectra and IV characteristics. The excellent transport capability of ZnO/PGAN contributes to enhanced electron transfer, and hence results in high sensitivity and quick response/recovery properties under different relative humidity (RH) levels. In the range of 12–96% RH, a fast sensing response time as low as 7 s and a recovery time of 13 s can be achieved. The simple design of a ZnO/PGAN based humidity sensor highlights its potential in various applications.

Graphical abstract: A ZnO/porous GaN heterojunction and its application as a humidity sensor

  • This article is part of the themed collection: Gas sensing

Supplementary files

Article information

Article type
Paper
Submitted
26 Sept. 2018
Accepted
20 Dec. 2018
First published
21 Dec. 2018
This article is Open Access
Creative Commons BY license

Nanoscale Adv., 2019,1, 1232-1239

A ZnO/porous GaN heterojunction and its application as a humidity sensor

C. Wang, H. Huang, M. Zhang, W. Song, L. Zhang, R. Xi, L. Wang and G. Pan, Nanoscale Adv., 2019, 1, 1232 DOI: 10.1039/C8NA00243F

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