Issue 14, 2021

Low-operating temperature ammonia sensor based on Cu2O nanoparticles decorated with p-type MoS2 nanosheets

Abstract

The high-operating temperature and poor selectivity of metal oxide semiconductor (MOS)-based chemiresistive-type gas sensors severely limit their application in the future Internet of Things (IoT), which need a lower power consumption and a higher accurate molecular recognition ability. Here, a simple and effective modification strategy is proposed for the incorporation of Cu2O and the two-dimensional (2D) material MoS2via a facile hydrothermal and wet chemical method. The sensing characteristics of a series of (p–p) Cu2O/MoS2 nanohybrids towards ammonia (NH3) are systematically investigated. The nanohybrid based sensor shows an excellent NH3 sensing performance compared with the pristine Cu2O nanoparticles in the 25–325 °C temperature range. Under an optimal low-operating temperature of 75 °C, the sensing performance for 20–100 ppm NH3 is studied and the sensing response of the Cu2O/MoS2 sensor (at ∼872%) with an optimized composition for 100 ppm NH3 is increased more than 8 times compared with the pristine Cu2O (∼103%) under the same conditions. Furthermore, excellent selectivity for NH3 is observed against other interferent gases. The Cu2O/MoS2 sensor belongs to a surface-controlled type and the enhanced sensing property of nanohybrid benefits from the superimposed effect of the p–p heterojunction formation and the elevated specific surface area at the interface between Cu2O and MoS2.

Graphical abstract: Low-operating temperature ammonia sensor based on Cu2O nanoparticles decorated with p-type MoS2 nanosheets

Supplementary files

Article information

Article type
Paper
Submitted
27 Janv. 2021
Accepted
10 Marts 2021
First published
13 Marts 2021

J. Mater. Chem. C, 2021,9, 4838-4846

Low-operating temperature ammonia sensor based on Cu2O nanoparticles decorated with p-type MoS2 nanosheets

Y. Ding, X. Guo, B. Du, X. Hu, X. Yang, Y. He, Y. Zhou and Z. Zang, J. Mater. Chem. C, 2021, 9, 4838 DOI: 10.1039/D1TC00391G

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