Issue 11, 2021

Growth mechanism of helical γ-Dy2S3 single crystals

Abstract

Unusual helical single crystals of γ-Dy2S3 were grown from solution by SnS evaporation, and their growth mechanism was investigated. The helical growth of γ-Dy2S3 single crystals is driven by axial screw dislocations, and the crystals grow via the vapor–solid–solid mechanism in the presence of a three-phase interface. Dy2S3 transfers into the vapor phase through a nonequilibrium process owing to simultaneous evaporation of Dy2S3 and SnS. The capture of a nonvolatile component during evaporation is common for solutions comprising volatile and nonvolatile components.

Graphical abstract: Growth mechanism of helical γ-Dy2S3 single crystals

Supplementary files

Article information

Article type
Communication
Submitted
02 Dec. 2020
Accepted
23 Janv. 2021
First published
25 Janv. 2021

CrystEngComm, 2021,23, 2196-2201

Growth mechanism of helical γ-Dy2S3 single crystals

R. E. Nikolaev, V. S. Sulyaeva, A. V. Alekseev, A. S. Sukhikh, E. V. Polyakova, T. A. Pomelova, T. Kuzuya, S. Hirai and B. Tran Nhu, CrystEngComm, 2021, 23, 2196 DOI: 10.1039/D0CE01750G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements