Issue 10, 2020

Engineering the crystal orientation of Na3V2(PO4)2F3@rGO microcuboids for advanced sodium-ion batteries

Abstract

Sodium superionic conductor structured Na3V2(PO4)2F3 is demonstrated to be a promising cathode material for sodium-ion batteries (SIBs) due to its high operating potential and robust 3D open framework for fast Na+ migration, but suffers from intrinsic low electronic conductivity caused by the insulating [PO4] tetrahedra. Herein, Na3V2(PO4)2F3@rGO (NVPF@rGO) microcuboids with different exposed crystal facets are fabricated via guiding the crystal growth orientation with the existence of NaX (X = F, Cl, Br). When employed as a cathode for SIBs, the optimum NVPF@rGO electrode exhibits a high discharge capacity of 127.5 mA h g−1 at 0.2C (1C = 128 mA g−1) and impressive rate performance of 73.7 mA h g−1 even at a high rate of 50C. Further testing of the commercial soft carbon//NVPF@rGO full cell delivers relatively excellent electrochemical properties in terms of an average operating voltage of ∼3.3 V, decent cycling stability at 5C (74.5% of the initial capacity after 500 cycles), and high energy density of 338 W h kg−1 (calculated by the mass of the NVPF cathode). Kinetic analysis results reveal that the ameliorated electrochemical properties should be related to the significantly enhanced ion migration at the material/electrolyte interface endowed by the oriented crystal growth along the [110] direction. This work will provide a novel approach for constructing advanced cathode materials for SIBs.

Graphical abstract: Engineering the crystal orientation of Na3V2(PO4)2F3@rGO microcuboids for advanced sodium-ion batteries

Supplementary files

Article information

Article type
Research Article
Submitted
31 Maijs 2020
Accepted
14 Jūl. 2020
First published
16 Jūl. 2020

Mater. Chem. Front., 2020,4, 2932-2942

Engineering the crystal orientation of Na3V2(PO4)2F3@rGO microcuboids for advanced sodium-ion batteries

L. Zhu, Q. Zhang, D. Sun, Q. Wang, N. Weng, Y. Tang and H. Wang, Mater. Chem. Front., 2020, 4, 2932 DOI: 10.1039/D0QM00364F

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