Issue 6, 2016

Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors

Abstract

We report on the p-type doping effect of oxygen and ozone molecules on mono- and few-layer WSe2 and MoSe2 field effect transistors. We show that adsorption of oxygen and ozone under ambient conditions results in subtantial doping and corresponding enhancement in the hole conductivity of the devices. Ozone-induced doping is found to be rapid and efficient, saturating within minutes of exposure whereas oxygen-induced doping occurs over a period of days to reach the equivalent level of doping. Our observations reveal that the water adlayer on the material surface plays a crucial role in solubilizing oxygen and ozone and in forming a redox couple with a large chemical potential.

Graphical abstract: Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors

Supplementary files

Article information

Article type
Communication
Submitted
23 Nov. 2015
Accepted
13 Janv. 2016
First published
13 Janv. 2016

Phys. Chem. Chem. Phys., 2016,18, 4304-4309

Author version available

Effect of oxygen and ozone on p-type doping of ultra-thin WSe2 and MoSe2 field effect transistors

S. Wang, W. Zhao, F. Giustiniano and G. Eda, Phys. Chem. Chem. Phys., 2016, 18, 4304 DOI: 10.1039/C5CP07194A

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