Mesh Bias Controlled Synthesis of TiO2 and Al0.74Ti0.26O3 Thin Films by Mist Chemical Vapor Deposition and Applications as Gate Dielectric Layers for Field-Effect Transistors

Kojun Yokoyama, Abdul Kuddus, Md Faruk Hossain and Hajime Shirai

ACS Appl. Electron. Mater., 2022, 4, 2516
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Performance variation with pristine and doped high‐k materials via atomic layer deposition

Eun Su Jung, JinUk Yoo, Tae Min Choi, Hwa Rim Lee, Chae Yeon Lee, Dong Hyun Kim and Sung Gyu Pyo

Int J Applied Ceramic Tech, 2025, 22
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Amorphous Carbon Monolayer: A van der Waals Interface for High-Performance Metal Oxide Semiconductor Devices

Viswanath G. Akkili, Jongchan Yoon, Kihyun Shin, Sanghyun Jeong, Ji-Yun Moon, Jun-Hui Choi, Seung-Il Kim, Ashish A. Patil, Frederick Aziadzo, Jeongbeen Kim, Suhyeon Kim, Dong-Wook Shin, Jung-Sub Wi, Hoon-Hwe Cho, Joon Sik Park, Eui-Tae Kim, Dong-Eun Kim, Jaeyeong Heo, Graeme Henkelman, Kostya S. Novoselov, Choong-Heui Chung, Jae-Hyun Lee, Zonghoon Lee and Sangyeob Lee

ACS Nano, 2025, 19, 1056
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Extensive Analysis of Gate Leakage Current in Nano-Scale Multi-gate MOSFETs

Shekhar Yadav, Hemant Kumar and Chandra Mohan Singh Negi

Trans. Electr. Electron. Mater., 2022, 23, 658
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Reduced Work Function in Anatase ⟨101⟩ TiO2 Films Self-Doped by O-Vacancy-Dependent Ti3+ Bonds Controlling the Photocatalytic Dye Degradation Performance

Debajyoti Das and Sukalyan Shyam

Langmuir, 2024, 40, 10502
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Comparison of high-k Y2O3/TiO2 bilayer and Y-doped TiO2 thin films on Ge substrate

Dong Gun Kim, Hae-Ryoung Kim, Dae Seon Kwon, Junil Lim, Haengha Seo, Tae Kyun Kim, Heewon Paik, Woongkyu Lee and Cheol Seong Hwang

J. Phys. D: Appl. Phys., 2021, 54, 185110
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Na doping process using UV and NaOH solution for leakage current reduction in TiO2 dielectric films

Chan Sik Yoo and Hong-Sub Lee

Applied Surface Science, 2025, 699, 163171
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Oxygen‐Scavenging Effects of Added Ti Layer in the TiN Gate of Metal‐Ferroelectric‐Insulator‐Semiconductor Capacitor with Al‐Doped HfO2 Ferroelectric Film

Yong Bin Lee, Beom Yong Kim, Hyeon Woo Park, Suk Hyun Lee, Minsik Oh, Seung Kyu Ryoo, In Soo Lee, Seungyong Byun, Doosup Shim, Jae Hoon Lee, Hani Kim, Kyung Do Kim, Min Hyuk Park and Cheol Seong Hwang

Adv Elect Materials, 2022, 8
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Enhanced Electrical Properties of an Al-Doped TiO2 Dielectric Film on a TiN Electrode by Adopting an Atomic Layer Deposited Ru Interlayer

Dae Seon Kwon, Tae Kyun Kim, Junil Lim, Haengha Seo, Heewon Paik and Cheol Seong Hwang

ACS Appl. Electron. Mater., 2022, 4, 2005
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High-temperature and interfacial oxidation of MAX phase-reinforced composite coatings deposited by laser cladding on Zr alloy substrates

Yi Xiao, Huaqiang Xiao, Taiqian Mo, Lirong Ren, Yuxin Tian and Lindan Zhu

Ceramics International, 2023, 49, 38672
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Atomic layer deposition of Ru/rutile Al-TiO2/Ru layer stacks for high-performance silicon capacitors

Taehyun Kim, Da Eun Lim, Hyeongjun Kim, Hyunmin Nah, Heun Park, Yoon Jang Chung and Woongkyu Lee

Materials Science in Semiconductor Processing, 2025, 195, 109646
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Mg-doped ZnO thin film based capacitive memory with low leakage current

Mritunjay Kumar and Jay Chandra Dhar

J Mater Sci: Mater Electron, 2024, 35
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Enhanced Performance and Gate Bias Stress Stability of Atomic-Layer-Deposited Amorphous Zn–Sn–O Thin-Film Transistors with HfO2 and Al-Doped TiO2 Interlayers on SiO2 Gate Oxide

Jinheon Choi, Juneseong Choi, Tae Kyun Kim, Yonghee Lee, Sukin Kang, Sahngik Aaron Mun, Jaewon Ham, Hyungjeung Kim and Cheol Seong Hwang

ACS Appl. Electron. Mater., 2025, 7, 215
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Enhancement of On-Current and Reliability in InGaZnO Thin-Film Transistors for Synaptic Circuit Applications through Gate Insulator Stack Engineering

Narae Han, Youngchae Roh, Ha-Jun Sung, Minseung Kang, Jongun Won, Joo-Hun Han, Younjin Jang, Jee-Eun Yang, Sangwook Kim and Sangbum Kim

ACS Appl. Mater. Interfaces, 2025, 17, 52943
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The impact of sputtering pressure on the TiO2/p-Si interface and its implications for hole-blocking and photodetection

Sukalyan Shyam and Debajyoti Das

Journal of Alloys and Compounds, 2024, 989, 174277
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