High-efficiency near-UV light-emitting diodes on Si substrates with InGaN/GaN/AlGaN/GaN multiple quantum wells

Yuan Li, Zhiheng Xing, Yulin Zheng, Xin Tang, Wentong Xie, Xiaofeng Chen, Wenliang Wang and Guoqiang Li

J. Mater. Chem. C, 2020, 8, 883
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Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure

Wenliang Wang, Yuan Li, Yulin Zheng, Zhichao Yang, Zhiting Lin, Xiaofeng Chen, Zhenya Lu and Guoqiang Li

CrystEngComm, 2018, 20, 4685
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Efficiency improved by monolithic integration of HEMT with vertical-structure LEDs and Mg doping on dry etched GaN

Dingbo Chen, Zhikun Liu, Xing Lu, Lijun Wan, Runze Li, Zhichao Yang and Guoqiang Li

J. Mater. Chem. C, 2019, 7, 2823
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A sandwich-structured AlGaN/GaN HEMT with broad transconductance and high breakdown voltage

Dingbo Chen, Zhikun Liu, Jinghan Liang, Lijun Wan, Zhuoliang Xie and Guoqiang Li

J. Mater. Chem. C, 2019, 7, 12075
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A well-grown β-Ga2O3 microrod array formed from GaOOH on a Si (100) substrate and growth mechanism study

Junhua Zhang, Shujie Jiao, Yongbiao Wan, Shiyong Gao, Dongbo Wang and JinZhong Wang

CrystEngComm, 2018, 20, 4329
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High-performance vertical GaN-based near-ultraviolet light-emitting diodes on Si substrates

Yuan Li, Wenliang Wang, Liegen Huang, Yulin Zheng, Xiaochan Li, Xin Tang, Wentong Xie, Xiaofen Chen and Guoqiang Li

J. Mater. Chem. C, 2018, 6, 11255
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Tungsten carbide layers deposited on graphite substrates via a wet powder process as anti-parasitic-reaction coatings for reactor components in GaN growth

Daisuke Nakamura, Taishi Kimura, Kenji Itoh, Naoki Fujimoto, Shugo Nitta and Hiroshi Amano

CrystEngComm, 2020, 22, 2632
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395 nm GaN-based near-ultraviolet light-emitting diodes on Si substrates with a high wall-plug efficiency of 520%@350 mA

Yuan Li, Jianyu Lan, Wenliang Wang, Yulin Zheng, Wentong Xie, Xin Tang, Deqi Kong, Yu Xia, Zhibin Lan, Runze Li, Xiaobin He and Guoqiang Li

Opt. Express, 2019, 27, 7447
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Coefficient-of-Performance Analyses for Light-Emitting-Diode Cycles Resembling Carnot Heat Pumps

Jihong Zhang and Tienmo Shih

IEEE Access, 2019, 7, 18764
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Effective removal of Si contamination at the GaN regrowth interface through in-situ etching

Haoran Qie, Hongwei Gao, Yaozong Zhong, Xiaolu Guo, Qian Sun, Tengfei Li, Yunzhe Cao, Xinchen Ge, Xinyu Sun, Fangqing Li, Xiujian Sun and Hui Yang

Applied Surface Science, 2025, 695, 162905
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Integration Technology of Micro-LED for Next-Generation Display

Dingbo Chen, Yu-Chang Chen, Guang Zeng, David Wei Zhang and Hong-Liang Lu

Research, 2023, 6
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Thin-film vertical monolithic III-nitride optoelectronic system

Fan Shi, Chengxiang Jiang, Jiaqi Yin, Jiawei Shi, Mingyuan Xie, Jiabin Yan, Hongbo Zhu and Yongjin Wang

Applied Physics Letters, 2025, 127
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Tunable white-light emission and energy transfer in single-phase Bi3+,Eu3+ co-doped Ba9Y2Si6O24 phosphors for UV w-LEDs

Hai Guo, Zhigang Zheng, Liming Teng, Rongfei Wei and Fangfang Hu

Journal of Luminescence, 2019, 213, 494
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Light-responsive vertical-structure light-emitting diode

Zheng Shi, Qinyan Zhou, Shuyu Ni, Hongbo Zhu and Yongjin Wang

Semicond. Sci. Technol., 2020, 35, 045025
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Excellent electroluminescence and electrical characteristics from p-CuO/i-Ga2O3/n-GaN light-emitting diode prepared by magnetron sputtering

Hui Wang, Guojiao Xiang, Yijian Zhou, Wenbo Peng, Yue Liu, Jiahui Zhang, Jinming Zhang, Rong Li and Yang Zhao

Journal of Luminescence, 2022, 243, 118621
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Color‐Tunable 3D InGaN/GaN Multi‐Quantum‐Well Light‐Emitting‐Diode Based on Microfacet Emission and Programmable Driving Power Supply

Lai Wang, Xun Wang, Frank Bertram, Bowen Sheng, Zhibiao Hao, Yi Luo, Changzheng Sun, Bing Xiong, Yanjun Han, Jian Wang, Hongtao Li, Gordon Schmidt, Peter Veit, Jürgen Christen and Xinqiang Wang

Advanced Optical Materials, 2021, 9
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High-Speed Parallel Micro-LED Arrays on Si Substrates Based on Via-Holes Structure for Visible Light Communication

Huaqing Chai, Shunan Yao, Lei Lei, Zihe Zhu, Guoqiang Li and Wenliang Wang

IEEE Electron Device Lett., 2022, 43, 1279
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A review on thermal management of light-emitting diodes: From package-level to system-level

Zongtao Li, Jing Tan, Jiasheng Li, Xinrui Ding and Yong Tang

Applied Thermal Engineering, 2024, 257, 124145
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Influence of top mirror on performance of GaN-based resonant cavity light-emitting diode

Shu-Yu Zhao, Bin-Bin Xu, Zhen-Yu Zhao and Xue-Qin Lü

Acta Phys. Sin., 2022, 71, 047801
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Fabrication of a thermostable Ga-face GaN template on a molybdenum substrate via layer transfer

Qing Wang, Zhiwen Liang, Qi Wang and Guoyi Zhang

Opt. Mater. Express, 2020, 10, 2447
DOI: 10.1364/OME.400388

A review on GaN-based two-terminal devices grown on Si substrates

Yu Zhang, Chao Liu, Min Zhu, Yuliang Zhang and Xinbo Zou

Journal of Alloys and Compounds, 2021, 869, 159214
DOI: 10.1016/j.jallcom.2021.159214

Realization of both enhancement and depletion mode MOSFETs on GaN-on-Si LED epitaxial wafer

Jinlong Piao, Jiabin Yan, Jinjia Li and Yongjin Wang

Semicond. Sci. Technol., 2020, 35, 10LT04
DOI: 10.1088/1361-6641/aba6e6

Efficiency Droop and Effective Active Volume in GaN-Based Light-Emitting Diodes Grown on Sapphire and Silicon Substrates

Han-Youl Ryu, Geun-Hwan Ryu and Chibuzo Onwukaeme

Applied Sciences, 2019, 9, 4160
DOI: 10.3390/app9194160

Ge-GaN deposition: An assistant kMC model

Romualdo Alejandro Ferreyra and Matias Abel Quiroga

Applied Surface Science, 2021, 546, 149132
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Stress and dislocation control of GaN epitaxial films grown on Si substrates and their application in high-performance light-emitting diodes

Yuan Li, Wenliang Wang, Xiaochan Li, Liegen Huang, Zhiting Lin, Yulin Zheng, Xiaofeng Chen and Guoqiang Li

Journal of Alloys and Compounds, 2019, 771, 1000
DOI: 10.1016/j.jallcom.2018.09.031