Recent advances in interface engineering of bismuth-based materials for photocatalytic CO2 reduction

Abstract

Photocatalytic reduction of CO₂ into value-added products is witnessed as a promising technology to mitigate global warming and energy crisis. Among the illustrious functional semiconductors, bismuth-based materials are feasible for the CO₂ reduction reaction owing to their convenient preparation, their narrow band gap and the availability of hybridized energy states in the conduction band. Furthermore, the inherent two dimensional (2D) layered structure of few Bi materials remains an added advantage for various photocatalytic reactions. In this focused review, the interfacial engineering of Bi-based semiconductors achieved by coupling them with distinct photocatalytic materials to form type-I, type-II, Z-scheme or S-scheme heterojunctions is discussed, and their applications in CO₂ reduction reactions are emphasized. Further advancements, including co-catalyst loading, defect engineering and designing hierarchical morphology from the perspective of improving charge carrier separation and structural stability are highlighted. The preparation methods and mechanistic pathways for the CO₂ reduction reaction are briefly summarized. Finally, the challenges and scope of Bi-based materials to spotlight their applications in energy- and environment-related areas are presented.