Issue 35, 2020

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Abstract

Herein, two kinds of vertical organic optoelectronic devices, vertical organic field-effect transistors (VOFETs) and light-emitting transistors (VOLETs), were constructed based on amorphous organic semiconductors of N,N′-di(1-naphthyl)-N,N′-diphenyl-(1,1′-biphenyl)-4,4′-diamine (NPB) as hole injecting and transport layers and tris(8-hydroxy-quinolinato) aluminum (Alq3) as the emitting layer. High device performances with a large on/off ratio of ∼6 × 103, current density of ∼40 mA cm−2, and fast response of ∼5 ms at a frequency of 20 Hz and a brightness of 126 cd m−2 were demonstrated for these two vertical devices with good device stability and repeatability. These results suggest the potential applications of amorphous organic semiconductors with good film-forming characteristics and easy device fabrication ability in vertical optoelectronic circuits.

Graphical abstract: High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

Supplementary files

Article information

Article type
Paper
Submitted
07 geg. 2020
Accepted
18 liep. 2020
First published
06 rugp. 2020

Nanoscale, 2020,12, 18371-18378

High-performance amorphous organic semiconductor-based vertical field-effect transistors and light-emitting transistors

H. Gao, J. Liu, Z. Qin, T. Wang, C. Gao, H. Dong and W. Hu, Nanoscale, 2020, 12, 18371 DOI: 10.1039/D0NR03569F

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