Issue 24, 2021

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

Abstract

A series of Cr3+-doped BaMSi3O9 (M = Zr, Sn, Hf) near-infrared emitting phosphors with tunable luminescence properties have been successfully synthesized by using a simple solid-state reaction method. The developed BaMSi3O9:Cr3+ phosphors show a broad near-infrared emission band ranging from 650 nm to 1200 nm with a peak wavelength longer than 800 nm and a full width at half maximum (FWHM) of more than 155 nm upon blue light excitation. The optimized phosphor also demonstrates good thermal stability, whose emission intensity at 150 °C can retain about 59% of its initial intensity at room temperature. The near-infrared LED prototypes constructed by combining the BaMSi3O9:Cr3+ phosphor with a blue LED chip give a maximum output power of 12.19 mW at a drive current of 320 mA. By using the fabricated near-infrared LED device as a lighting source, night-vision lighting and blood vessel imaging of human fingers and arms are successfully realized, demonstrating the great potential of BaMSi3O9:Cr3+ phosphors for near-infrared LED applications.

Graphical abstract: Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

Supplementary files

Article information

Article type
Research Article
Submitted
24 Aug 2021
Accepted
12 Okt 2021
First published
13 Okt 2021

Inorg. Chem. Front., 2021,8, 5186-5194

Broadband near-infrared BaMSi3O9:Cr3+ (M = Zr, Sn, Hf) phosphors for light-emitting diode applications

Y. Zhang, Y. Liang, S. Miao, D. Chen, S. Yan and J. Liu, Inorg. Chem. Front., 2021, 8, 5186 DOI: 10.1039/D1QI01082D

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