Issue 3, 2020

A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors

Abstract

Mixed-dimension van der Waals (vdW) p–n heterojunction photodiodes have inspired worldwide efforts to combine the excellent properties of 2D materials and traditional semiconductors without consideration of lattice mismatch. However, owing to the scarcity of intrinsic p-type semiconductors and insufficient optical absorption of the few layer 2D materials, a high performance photovoltaic device based on a vdW heterojunction is still lacking. Here, a novel mixed-dimension vdW heterojunction consisting of 1D p-type Se nanotubes and a 2D flexible n-type InSe nanosheet is proposed by a facile method, and the device shows excellent photovoltaic characteristics. Due to the superior properties of the hybrid p–n junction, the mix-dimensional van der Waals heterojunction exhibited high on/off ratios (103) at a relatively weak light intensity of 3 mW cm−2. And a broadband self-powered photodetector ranging from the UV to visible region is achieved. The highest responsivity of the device could reach up to 110 mA W−1 without an external energy supply. This value is comparable to that of the pristine Se device at 5 V and InSe device at 0.1 V, respectively. Furthermore, the response speed is enhanced by one order of magnitude over the single Se or InSe device even at a bias voltage. This work paves a new way for the further development of high performance, low cost, and energy-efficient photodetectors by using mixed-dimensional vdW heterostructures.

Graphical abstract: A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors

Supplementary files

Article information

Article type
Communication
Submitted
08 Nov 2019
Accepted
12 Dez 2019
First published
17 Dez 2019

Nanoscale Horiz., 2020,5, 564-572

A mixed-dimensional 1D Se–2D InSe van der Waals heterojunction for high responsivity self-powered photodetectors

H. Shang, H. Chen, M. Dai, Y. Hu, F. Gao, H. Yang, B. Xu, S. Zhang, B. Tan, X. Zhang and P. Hu, Nanoscale Horiz., 2020, 5, 564 DOI: 10.1039/C9NH00705A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements