Recent progress on defect-engineering in ferroelectric HfO2: The next step forward via multiscale structural optimization

Fengjun Yan, Yao Wu, Yilong Liu, Pu Ai, Shi Liu, Shiqing Deng, Kan-Hao Xue, Qiuyun Fu and Wen Dong

Mater. Horiz., 2024, 11, 626
DOI: 10.1039/D3MH01273E

Germanium nanocrystal non-volatile memory devices: fabrication, charge storage mechanism and characterization

Wai Kin Chim

Nanoscale, 2025, 17, 4195
DOI: 10.1039/D4NR05159A

Unique switching mode of HfO2 among fluorite-type ferroelectric candidates

Ge-Qi Mao, Heng Yu, Kan-Hao Xue, Jinhai Huang, Zijian Zhou and Xiangshui Miao

J. Mater. Chem. C, 2024, 12, 15463
DOI: 10.1039/D4TC02418D

Growth modulation of atomic layer deposition of HfO2 by combinations of H2O and O3 reactants

Byeong Guk Ko, Chi Thang Nguyen, Bonwook Gu, Mohammad Rizwan Khan, Kunwoo Park, Hongjun Oh, Jungwon Park, Bonggeun Shong and Han-Bo-Ram Lee

Dalton Trans., 2021, 50, 17935
DOI: 10.1039/D1DT03465K

Effect of oxygen flow on the optical properties of hafnium oxide thin films by dual-ion beam sputtering deposition

Shaobo Fang, Chong Ma, Weiming Liu, Junbo He, Cheng Wang, Gang Chen, Dingquan Liu and Rongjun Zhang

Appl. Phys. A, 2022, 128
DOI: 10.1007/s00339-022-06224-2

Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared

Catalin Palade, Ana-Maria Lepadatu, Adrian Slav, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea, Doru Ursutiu and Cornel Samoila

Materials, 2021, 14, 7040
DOI: 10.3390/ma14227040

Improved Ferroelectric Properties in Hf0.5Zr0.5O2 Thin Films by Microwave Annealing

Biyao Zhao, Yunting Yan, Jinshun Bi, Gaobo Xu, Yannan Xu, Xueqin Yang, Linjie Fan and Mengxin Liu

Nanomaterials, 2022, 12, 3001
DOI: 10.3390/nano12173001

Polarization Switching and Correlated Phase Transitions in Fluorite‐Structure ZrO2 Nanocrystals

Xinyan Li, Hai Zhong, Ting Lin, Fanqi Meng, Ang Gao, Zhuohui Liu, Dong Su, Kuijuan Jin, Chen Ge, Qinghua Zhang and Lin Gu

Advanced Materials, 2023, 35
DOI: 10.1002/adma.202207736

Characteristics of Hf0.5Zr0.5O2 Thin Films Prepared by Direct and Remote Plasma Atomic Layer Deposition for Application to Ferroelectric Memory

Da Hee Hong, Jae Hoon Yoo, Won Ji Park, So Won Kim, Jong Hwan Kim, Sae Hoon Uhm and Hee Chul Lee

Nanomaterials, 2023, 13, 900
DOI: 10.3390/nano13050900

Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix

Ioana Dascalescu, Catalin Palade, Adrian Slav, Ionel Stavarache, Ovidiu Cojocaru, Valentin Serban Teodorescu, Valentin-Adrian Maraloiu, Ana-Maria Lepadatu, Magdalena Lidia Ciurea and Toma Stoica

Sci Rep, 2024, 14
DOI: 10.1038/s41598-024-53845-z

Characterization of HZO Films Fabricated by Co-Plasma Atomic Layer Deposition for Ferroelectric Memory Applications

Won-Ji Park, Ha-Jung Kim, Joung-Ho Lee, Jong-Hwan Kim, Sae-Hoon Uhm, So-Won Kim and Hee-Chul Lee

Nanomaterials, 2024, 14, 1801
DOI: 10.3390/nano14221801

SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors

Catalin Palade, Adrian Slav, Ovidiu Cojocaru, Valentin Serban Teodorescu, Toma Stoica, Magdalena Lidia Ciurea and Ana-Maria Lepadatu

Coatings, 2022, 12, 348
DOI: 10.3390/coatings12030348

The effect of stress on HfO2-based ferroelectric thin films: A review of recent advances

Runhao Han, Peizhen Hong, Shuai Ning, Qiang Xu, Mingkai Bai, Jing Zhou, Kaiyi Li, Fei Liu, Feng Shi, Feng Luo and Zongliang Huo

J. Appl. Phys., 2023, 133, 240702
DOI: 10.1063/5.0146998

Epitaxial growth and phase evolution of ferroelectric La-doped HfO2 films

Zhi Shen, Lei Liao, Yong Zhou, Ke Xiong, Jinhua Zeng, Xudong Wang, Yan Chen, Jingjing Liu, Tianle Guo, Shukui Zhang, Tie Lin, Hong Shen, Xiangjian Meng, Yiwei Wang, Yan Cheng, Jing Yang, Pan Chen, Lifen Wang, Xuedong Bai, Junhao Chu and Jianlu Wang

Applied Physics Letters, 2022, 120
DOI: 10.1063/5.0087976

Ferroelectricity in Y:HfO2 thin films grown on transparent FTO/glass substrates through a multi-step deposition-annealing process

Shibnath Samanta, Gopinathan Anoop, WooJun Seol, Hyunjin Joh, Seong Min Park and Ji Young Jo

Journal of Alloys and Compounds, 2025, 1010, 178235
DOI: 10.1016/j.jallcom.2024.178235

Low-temperature microwave annealing stabilizes the morphotropic phase boundary in HfO2/ZrO2 superlattice heterostructures

Chen-You Wei, Yu-Hong Chen, Tzu-I Kao, Cheng-En Wu, Chao-Wei Wu, Heng-Jia Chang, Yi-Ju Yao, Fu-Ju Hou, Guang-Li Luo and Yung-Chun Wu

Applied Physics Letters, 2025, 126
DOI: 10.1063/5.0264349

The characterization and understanding of electrically active defects in the HfO2/β-Ga2O3(2̄01) MOS system

Khushabu S. Agrawal, Paolo La Torraca, Jonas Valentijn, Roberta Hawkins, Adam A. Gruszecki, Joy Roy, Vasily Lebedev, Lewys Jones, Robert M. Wallace, Chadwin D. Young, Paul K. Hurley and Karim Cherkaoui

APL Materials, 2025, 13
DOI: 10.1063/5.0283247

Crystallinity Effect on Electrical Properties of PEALD–HfO2 Thin Films Prepared by Different Substrate Temperatures

Xiao-Ying Zhang, Jing Han, Duan-Chen Peng, Yu-Jiao Ruan, Wan-Yu Wu, Dong-Sing Wuu, Chien-Jung Huang, Shui-Yang Lien and Wen-Zhang Zhu

Nanomaterials, 2022, 12, 3890
DOI: 10.3390/nano12213890

High strength, low thermal conductivity and collapsible of Y2O3-stablized HfO2 crystalline fibrous membranes

Zhezhe Deng, Yongshuai Xie, Wei Liu, Jianhong Dong, Ying Peng, Ze Zhu, Luyi Zhu, Guanghui Zhang, Xinqiang Wang and Dong Xu

Ceramics International, 2022, 48, 16715
DOI: 10.1016/j.ceramint.2022.02.220

Ferroelectrics at the nanoscale: materials and devices – a critical review

Mircea Dragoman, Martino Aldrigo, Daniela Dragoman, Sergiu Iordanescu, Adrian Dinescu, Silviu Vulpe and Mircea Modreanu

Critical Reviews in Solid State and Materials Sciences, 2023, 48, 561
DOI: 10.1080/10408436.2022.2083579

Effect of Ce doping on ferroelectric HfO2 from first-principles: Implications for ferroelectric thin films and phase regulation

Yushui Tian, Yulu Zhou, Miao Zhao, Yifang Ouyang and Xiaoma Tao

Journal of Solid State Chemistry, 2023, 328, 124316
DOI: 10.1016/j.jssc.2023.124316

The effect of Nd-doping on polymorphic behavior and dielectric properties of HfO2: An experimental study and DFT calculation

D. Banerjee, Snehamoyee Hazra, Subarna Datta, Jipin Peter, Raju K. Biswas and Barnali Ghosh

Journal of Alloys and Compounds, 2025, 1029, 180724
DOI: 10.1016/j.jallcom.2025.180724

Memory Properties of Zr-Doped ZrO2 MOS-like Capacitor

Catalin Palade, Adrian Slav, Ionel Stavarache, Valentin Adrian Maraloiu, Catalin Negrila and Magdalena Lidia Ciurea

Coatings, 2022, 12, 1369
DOI: 10.3390/coatings12091369