Recent advances in flexible memristors for advanced computing and sensing

Jiaming Xu, Ziwang Luo, Long Chen, Xuhui Zhou, Haozhe Zhang, Yuanjin Zheng and Lei Wei

Mater. Horiz., 2024, 11, 4015
DOI: 10.1039/D4MH00291A

Halide perovskite-based memory devices and neuromorphic computing

Tufan Paul, Aditi Sahoo, Soumen Maiti, Pulak Pal and Kalyan Kumar Chattopadhyay

Dalton Trans., 2026
DOI: 10.1039/D5DT02579F

Vortex flow induced self-assembly in CsPbI3 rods leads to an improved electrical response towards external analytes

Tufan Paul, Avisek Maity, Partha Bairi, Aditi Sahoo, Soumen Maiti, Manoj Singh, Barnali Ghosh and Rupak Banerjee

Dalton Trans., 2024, 53, 6333
DOI: 10.1039/D4DT00013G

Lead-free CsSnCl3 perovskite nanocrystals: rapid synthesis, experimental characterization and DFT simulations

Md. Shahjahan Ali, Subrata Das, Yasir Fatha Abed and M. A. Basith

Phys. Chem. Chem. Phys., 2021, 23, 22184
DOI: 10.1039/D1CP02666F

Reservoir computing using back-end-of-line SiC-based memristors

Dongkai Guo, Omesh Kapur, Peng Dai, Yisong Han, Richard Beanland, Liudi Jiang, C. H. (Kees) de Groot and Ruomeng Huang

Mater. Adv., 2023, 4, 5305
DOI: 10.1039/D3MA00141E

Advances in perovskite-based neuromorphic computing devices

Yixin Cao, Yuanxi Li, Ganggui Zhu, Linhui Li, Guohua Lu, Eng Gee Lim, Wenqing Liu, Yina Liu, Chun Zhao and Zhen Wen

Nanoscale, 2025, 17, 12014
DOI: 10.1039/D5NR00335K

Statistical variability analysis of resistive switching in lead-free double perovskite flexible memristors

Susmita Das, Prabir Kumar Haldar and Pranab Kumar Sarkar

Nanoscale, 2026, 18, 5873
DOI: 10.1039/D5NR04484G

Halide perovskite photoelectric artificial synapses: materials, devices, and applications

Zhengyang Xue, Yunchao Xu, Chenxing Jin, Yihuan Liang, Zihao Cai and Jia Sun

Nanoscale, 2023, 15, 4653
DOI: 10.1039/D2NR06403K

Biomolecules incorporated in halide perovskite nanocrystals: synthesis, optical properties, and applications

Masoud Aminzare, Jennifer Jiang, Gabrielle A. Mandl, Sara Mahshid, John A. Capobianco and Noémie-Manuelle Dorval Courchesne

Nanoscale, 2023, 15, 2997
DOI: 10.1039/D2NR05565A

Fermi–Dirac statistics in correlation between electronic entropy and spatial confinement of liquid crystal-perovskite nanohybrids

Deejan Debnath, Prithish Halder, Barnali Saha, Himadri Acharya and Sujit Kumar Ghosh

J. Mater. Chem. C, 2024, 12, 3535
DOI: 10.1039/D4TC00212A

Centimetre-scale single crystal α-MoO3: oxygen assisted self-standing growth and low-energy consumption synaptic devices

Xin Shan, Zeyu Wu, Yangyang Xie, Xin Lin, Baozeng Zhou, Yupeng Zhang, Xiaobing Yan, Tianling Ren, Fang Wang and Kailiang Zhang

Nanoscale, 2023, 15, 1200
DOI: 10.1039/D2NR04530C

Nanostructured perovskites for nonvolatile memory devices

Qi Liu, Song Gao, Lei Xu, Wenjing Yue, Chunwei Zhang, Hao Kan, Yang Li and Guozhen Shen

Chem. Soc. Rev., 2022, 51, 3341
DOI: 10.1039/D1CS00886B

Observation of piezoelectricity in a lead-free Cs2AgBiBr6 perovskite: a new entrant in the energy harvesting arena

Tufan Paul, Aditi Sahoo, Soumen Maiti, Suvankar Mandal, Souvik Bhattacharjee, Avisek Maity and Kalyan Kumar Chattopadhyay

Nanoscale, 2024, 16, 16127
DOI: 10.1039/D4NR01230E

Electrode dependence in halide perovskite memories: resistive switching behaviours

Gregory Soon How Thien, Mohd Arif Mohd Sarjidan, Noor Azrina Talik, Boon Tong Goh, Boon Kar Yap, Zhicai He and Kah-Yoong Chan

Mater. Chem. Front., 2022, 6, 3125
DOI: 10.1039/D2QM00614F

Recent Advances in Halide Perovskite-Based Nonvolatile Resistive Random-Access Memory

Abubakkar Siddik, Pranab Kumar Sarkar and Prabir Kumar Haldar

J. Electron. Mater., 2022, 51, 434
DOI: 10.1007/s11664-021-09328-2

Clay Induced Performance Enhancement of a Plant Extract-Based WORM and RRAM for Sustainable Data Storage and Neuromorphic Computing Applications

Farhana Yasmin Rahman, Santanu Chakraborty, Rahul Deb, Md. Jashim Uddin, Debajyoti Bhattacharjee, Khuloud A. Alibrahim, Abdullah N. Alodhayb and Syed Arshad Hussain

ACS Appl. Electron. Mater., 2024, 6, 6591
DOI: 10.1021/acsaelm.4c01028

Eco-friendly lead-free metal halide perovskites: Progress and prospects in multifunctional applications

Maria Mukhtar, Burragoni Sravanthi Goud, Zeeshan Ali, Muhammad Waleed Shaid, Bushra Naz, Qurat Ul Ain, Mohammed A. Assiri, Savas Sonmezoglu, Altaf Hussain Rajpar, Jae Hong Kim and Sikandar Aftab

Journal of Alloys and Compounds, 2025, 1026, 180365
DOI: 10.1016/j.jallcom.2025.180365

Chromium cyanurate-based robust resistive switching device emulating synaptic plasticity for neuromorphic application

Udumu Mounika Reddy, Deepak K, Ashish Varade, P. Anjaneyulu, Shobith M. Shanbogh and R.S. Vishwanath

Synthetic Metals, 2026, 319, 118161
DOI: 10.1016/j.synthmet.2026.118161

A dual-functional two-terminal memristor based on Cs4PbBr6 perovskite for high density data storage and synaptic plasticity

Hulin Jin, Yong-Guk Kim, Zhiran Jin, Wenyin Liu and Libin Lei

Ceramics International, 2022, 48, 33949
DOI: 10.1016/j.ceramint.2022.07.344

Effects of Halide Composition on Endurance and Retention Performance in Double Perovskite Resistive Switching Memory

SangMyeong Lee, Jae Myeong Lee, Won Bin Kim and Hyun Suk Jung

ACS Appl. Electron. Mater., 2024, 6, 7617
DOI: 10.1021/acsaelm.4c01472

Mechanism analysis of phase-change-induced negative differential resistance in BiFeO₃/La₀.₇Sr₀.₃MnO₃ heterojunction-based resistive switching memory devices

Jie Zhang, Yongrong Huang, Yi Luo, Jingwen Yuan, Shunping Shi, Chuanyu Zhang, Bai Sun, Fanggong Cai and Yong Zhao

Materials Today Communications, 2025, 49, 113841
DOI: 10.1016/j.mtcomm.2025.113841

Low temperature synthesis of Cs2AgBiBr6 lead-free perovskite for flexible photodetector

Bangqi Jiang, Genghua Yan, Yao Xiao, Ye Yuan, Chuanxi Zhao, Wenjie Mai and Ruijiang Hong

J Mater Sci, 2023, 58, 7076
DOI: 10.1007/s10853-023-08451-1

Lead‐Free Perovskites and Metal Halides for Resistive Switching Memory and Artificial Synapse

Bo Wei Zhang, Chun‐Ho Lin, Shruti Nirantar, EQ Han, Yurou Zhang, Zitong Wang, Miaoqiang Lyu and Lianzhou Wang

Small Structures, 2024, 5
DOI: 10.1002/sstr.202300524

Charge-Carrier Dynamics and Relaxation in Cs2SnI6 Perovskite for Energy Storage: Existence of Anharmonic Rattling-Assisted Polaron Dynamics

Moumita Ghosh, Pulak Pal, Tufan Paul, Soumen Maiti, Souvik Bhattacharjee, Kausik Sardar, Aditi Sahoo, Aswini Ghosh and Kalyan Kumar Chattopadhyay

Phys. Rev. Applied, 2023, 20
DOI: 10.1103/PhysRevApplied.20.054032

Effect of HBr additive on the performance of all-inorganic Cs3Bi2Br9 halide perovskite resistive switching memory

Jianghua Xu, Jianping Xu, Shaobo Shi, Weihao Bian, Jing Chen, Songyao Gao, Xue Zhou, Lina Kong, Xiaosong Zhang and Lan Li

Journal of Alloys and Compounds, 2023, 968, 171886
DOI: 10.1016/j.jallcom.2023.171886

Unraveling Dual Operational Mechanisms in an Air-Stable All Inorganic Perovskite for Nonvolatile Memory and Neuromorphic Computing

Zhiqiang Xie, Difei Zhang, Long Cheng, Chaohui Li, Jack Elia, Jianchang Wu, Jingjing Tian, Lijun Chen, Maria Antonietta Loi, Andres Osvet and Christoph J. Brabec

ACS Energy Lett., 2024, 9, 948
DOI: 10.1021/acsenergylett.3c02767

A Nonvolatile Bipolar Optical Fiber Memory Based on Phase Change Materials

Jiapeng Sun, Hanyang Li, Yifan Qin, Siying Cheng, Jinhua Mou, Jiaxing Gao, Yu Zhang and Zhihai Liu

ACS Photonics, 2024, 11, 102
DOI: 10.1021/acsphotonics.3c01022

Flexible artificial synapses with robust bending stability based on all inorganic lead-free bismuth perovskite

Feifei Luo, Xinci Chen, Qiaoyu Guo, Qiao Wang, Yanzhao Wu, Xuechen Jiao and Xianmin Zhang

Applied Physics Letters, 2024, 124
DOI: 10.1063/5.0191981

Biomimetic Synapses Based on Halide Perovskites for Neuromorphic Vision Computing: Materials, Devices, and Applications

Zhongwen Sun, Xuan Zhao, Haonan Si, Qingliang Liao and Yue Zhang

Nano-Micro Lett., 2026, 18
DOI: 10.1007/s40820-025-02052-0

A facile fabrication of lead-free Cs2NaBiI6 double perovskite films for memory device application

Yadan Zheng, Feifei Luo, Liuxia Ruan, Junwei Tong, Linwei Yan, Caixiang Sun and Xianmin Zhang

Journal of Alloys and Compounds, 2022, 909, 164613
DOI: 10.1016/j.jallcom.2022.164613

Aliovalent Ta-Doping-Engineered Oxygen Vacancy Configurations for Ultralow-Voltage Resistive Memory Devices: A DFT-Supported Experimental Study

Arabinda Barman, Dip Das, Sujit Deshmukh, Pranab Kumar Sarkar, Debosmita Banerjee, René Hübner, Mukul Gupta, Chetan Prakash Saini, Shammi Kumar, Priya Johari, Sankar Dhar and Aloke Kanjilal

ACS Appl. Mater. Interfaces, 2022, 14, 34822
DOI: 10.1021/acsami.2c05089

Wide-Range Synaptic Current Responses with a Liquid Ga Electrode via a Surface Redox Reaction in a NaOH Solution at Different Molar Concentrations

Dahee Seo, Seongyeon Kang, Heejoong Ryou, Myunghun Shin and Wan Sik Hwang

ACS Omega, 2023, 8, 41495
DOI: 10.1021/acsomega.3c05352

Recent advancements in metal oxide‐based hybrid nanocomposite resistive random‐access memories for artificial intelligence

Anirudh Kumar, Kirti Bhardwaj, Satendra Pal Singh, Youngmin Lee, Sejoon Lee, Mohit Kumar and Sanjeev K. Sharma

InfoMat, 2025, 7
DOI: 10.1002/inf2.12644

Organic-Inorganic Fapbbr3 Perovskite Based Flexible Optoelectronic Memory Device for Light-Induced Multi Level Resistive Switching Application

Abubakkar Siddik, Prabir Kumar Haldar, Ujjal Das, Asim Roy and Pranab Kumar Sarkar

SSRN Journal, 2022
DOI: 10.2139/ssrn.4172882

Back‐End‐of‐Line SiC‐Based Memristor for Resistive Memory and Artificial Synapse

Omesh Kapur, Dongkai Guo, Jamie Reynolds, Yisong Han, Richard Beanland, Liudi Jiang, C. H. (Kees) de Groot and Ruomeng Huang

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202200312

Room-Temperature Fabricated Multilevel Nonvolatile Lead-Free Cesium Halide Memristors for Reconfigurable In-Memory Computing

Tsung-Kai Su, Wei-Kai Cheng, Cheng-Yueh Chen, Wei-Chun Wang, Yung-Tang Chuang, Guang-Hsun Tan, Hao-Cheng Lin, Cheng-Hung Hou, Ching-Min Liu, Ya-Chu Chang, Jing-Jong Shyue, Kai-Chiang Wu and Hao-Wu Lin

ACS Nano, 2022, 16, 12979
DOI: 10.1021/acsnano.2c05436

Advances in Flexible Memristors with Hybrid Perovskites

Himangshu Jyoti Gogoi, Kunal Bajpai, Arun Tej Mallajosyula and Ankur Solanki

J. Phys. Chem. Lett., 2021, 12, 8798
DOI: 10.1021/acs.jpclett.1c02105

Flexible Memristors for Implantable Applications

Wei Lin, Bai Sun, Shuangsuo Mao, Jiajia Qin, Yusheng Yang, Mingnan Liu, Zhaowei Rao, Yulong Yang and Yong Zhao

ACS Appl. Nano Mater., 2025, 8, 2073
DOI: 10.1021/acsanm.4c06039

Role of antisolvent-based two-step fabrication process in retention of structural stability of organic–inorganic perovskites

Manoj Singh, Tufan Paul, Nisha Hiralal Makani, Dewanshi and Rupak Banerjee

J Mater Sci: Mater Electron, 2023, 34
DOI: 10.1007/s10854-023-10856-2

Modulating, structural, optical band gap, luminescence, and electrical properties of perspective synthesized lead-free halide perovskite CsSnCl3/Cs2O nanocomposites

Fawzy G. El Desouky

emergent mater., 2025, 8, 4719
DOI: 10.1007/s42247-025-01032-9

Transient and Biocompatible Resistive Switching Memory Based on Electrochemically‐Deposited Zinc Oxide

Qi Xue, Tao Hang, Zheng Gong, Linfeng Chen, Jianghu Liang, Yu Sun, Di Lu, Xiaonong Zhang, Chun‐Chao Chen and Ming Li

Adv Elect Materials, 2021, 7
DOI: 10.1002/aelm.202100322

Poly 3-methylthiophene based memristor device for neuromorphic computing

Shobith M Shanbogh, Ashish Varade, Anju kumari and Anjaneyulu P.

Synthetic Metals, 2023, 296, 117360
DOI: 10.1016/j.synthmet.2023.117360

Flexible organic artificial synapse with ultrashort-term plasticity for tunable time-frequency signal processing

Yao Ni, Lu Liu, Jiulong Feng, Lu Yang and Wentao Xu

Chinese Chemical Letters, 2023, 34, 108419
DOI: 10.1016/j.cclet.2023.108419

Insight of the high switching window and data retention in lead-free 2D layered double perovskite resistive memory device

Ujjal Das, Hari Krishna Mishra, Zinnia Mallick, Varun Gupta, Anurag Dehingia, Asim Roy and Dipankar Mandal

Applied Physics Letters, 2023, 123
DOI: 10.1063/5.0174804

Organic-inorganic FAPbBr3 perovskite based flexible optoelectronic memory device for light-induced multi level resistive switching application

Abubakkar Siddik, Prabir Kumar Haldar, Ujjal Das, Asim Roy and Pranab Kumar Sarkar

Materials Chemistry and Physics, 2023, 297, 127292
DOI: 10.1016/j.matchemphys.2022.127292

Emerging New‐Generation Detecting and Sensing of Metal Halide Perovskites

Hui Bu, Caili He, Yanqing Xu, Lu Xing, Xiaomin Liu, Shuxia Ren, Shenghui Yi, Liang Chen, Hao Wu, Guanglei Zhang, Jinjin Zhao and Jianlin Shi

Adv Elect Materials, 2022, 8
DOI: 10.1002/aelm.202101204

The rise of metal halide perovskite memristors for edge computing

Tianwei Duan, Jiajia Zha, Ning Lin, Zhongrui Wang, Chaoliang Tan and Yuanyuan Zhou

Device, 2023, 1, 100221
DOI: 10.1016/j.device.2023.100221

Analog memristive devices based on La2NiO4+ δ as synapses for spiking neural networks

Thoai-Khanh Khuu, Aleksandra Koroleva, Arnaud Degreze, Elena-Ioana Vatajelu, Gauthier Lefèvre, Carmen Jiménez, Serge Blonkowski, Eric Jalaguier, Ahmad Bsiesy and Mónica Burriel

J. Phys. D: Appl. Phys., 2024, 57, 10LT01
DOI: 10.1088/1361-6463/ad1016

Incorporating MXene in Perovskite for Modulating Ion Migration and Enhancing Object Detection

Wenbiao Niu, Ruo‐Si Chen, Hang Li, Yuwei Su, Jiyu Zhao, Zherui Zhao, Jituo Li, Haitao Zhou, Xinqi Ma, Ziyu Lv, Yongbiao Zhai, Guanglong Ding, Su‐Ting Han, Vellaisamy A. L. Roy and Ye Zhou

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202501877

Manipulation of ionic transport in anisotropic silver-based lead-free perovskite analogue with interstitial-iodide for enabling artificial synaptic functions

Bo Wei Zhang, Julian A. Steele, Ardeshir Baktash, Shuo Zhang, Fandi Chen, Chun-Ho Lin, Eduardo Solano, Amir Ehsan Rezaee, Sabah Gaznaghi, EQ Han, Yurou Zhang, Zitong Wang, Mu Xiao, Miaoqiang Lyu and Lianzhou Wang

Nano Energy, 2025, 139, 110981
DOI: 10.1016/j.nanoen.2025.110981

Comprehensive studies of dielectric behavior, resistive switching, and a.c. conduction in zinc-containing quaternary glasses of Se-Te-Sn

Vishnu Saraswat, Shiv Kumar Pal, A. Dahshan and Neeraj Mehta

Journal of Non-Crystalline Solids, 2023, 617, 122487
DOI: 10.1016/j.jnoncrysol.2023.122487

ЗАКОНОМЕРНОСТИ РАСПРЕДЕЛЕНИЯ ЭЛЕКТРИЧЕСКОГО ПОЛЯ И КИСЛОРОДНЫХ ВАКАНСИЙ В НАНОРАЗМЕРНЫХ МЕМРИСТОРНЫХ СТРУКТУРАХ НА ОСНОВЕ ТОНКИХ ПЛЕНОК ОКСИДА ТИТАНА ДЛЯ СИСТЕМ ГИБКОЙ ЭЛЕКТРОНИКИ

И.Л. Житяев, М.С. Картель, Ю.Ю. Житяева and В.А. Смирнов

Nanoindustry Russia, 2025, 18, 480
DOI: 10.22184/1993-8578.2025.18.11s.480.485

Impact of metallic and vacancy-oriented filamentary switching on memristor device based on Cs2AgInCl6 double halide perovskite

Awais Khalid, Abdulaziz M. Alanazi, Suliman A. Alderhami, Amal H. Alsehli, Marwah M. Alsowayigh, Ahmad M. Saeedi, Hasan B. Albargi and Hamed M. Al-Saidi

Materials Science in Semiconductor Processing, 2023, 165, 107678
DOI: 10.1016/j.mssp.2023.107678

Flexible memristors with low-operation voltage and high bending stability based on Cu2AgBiI6 perovskite

Xinci Chen, Xiang Yin, Zicong Li, Lingyu Meng, Xiaoli Han, Zhijun Zhang and Xianmin Zhang

Journal of Applied Physics, 2024, 136
DOI: 10.1063/5.0231148

α‐CsPbI3 Quantum Dots ReRAM with High Air Stability Working by Valance Change Filamentary Mechanism

Da Eun Lee, In Hyuk Im, Ji Hyun Baek, Kyung Ju Kwak, Seung Ju Kim, Tae Hyung Lee, Jae Young Kim and Ho Won Jang

Small Methods, 2025, 9
DOI: 10.1002/smtd.202400514

Photoelectrocatalytic CO2 reduction using stable lead-free bimetallic CsAgBr2 halide perovskite nanocrystals

Nisha Hiralal Makani, Manoj Singh, Tufan Paul, Aditi Sahoo, Jatin Nama, Sudhanshu Sharma and Rupak Banerjee

Journal of Electroanalytical Chemistry, 2022, 920, 116583
DOI: 10.1016/j.jelechem.2022.116583

A comprehensive DFT + U investigation of electrical, optical, and structural properties of doped CsSnCl3 Perovskite: Unveiling optoelectronic potential

Dholon Kumar Paul and A.K.M. Akther Hossain

Computational Materials Science, 2024, 231, 112585
DOI: 10.1016/j.commatsci.2023.112585

Sustainable All‐Inorganic Double Perovskite Memristors Enabling Synaptic Learning and Cognitive Emulation

Jnanaprakash Dash, Sandaap Sathyanarayana, Muhammed Sahad E, Saptarshi Bej and Bikas C. Das

Small, 2026
DOI: 10.1002/smll.202511750

Stable reconfiguring, high-density memory and synaptic characteristics in Sn alloyed CsPbI3 perovskite based resistive switching device

Min Huang, Mingshu Hou, Haiyang Xing, Jiale Tu and Shuanglian Jia

Journal of Alloys and Compounds, 2023, 934, 167719
DOI: 10.1016/j.jallcom.2022.167719

Bipolar-resistive switching characteristics in lead-free inorganic double-halide perovskite-based memory devices

Susmita Das, Prabir Kumar Haldar and Pranab Kumar Sarkar

Bull Mater Sci, 2024, 47
DOI: 10.1007/s12034-024-03286-1

Soybean-based memristor for multilevel data storage and emulation of synaptic behavior

Lu Wang, Wenhao Li and Dianzhong Wen

Microelectronic Engineering, 2023, 267-268, 111911
DOI: 10.1016/j.mee.2022.111911

Review on Resistive Switching Devices Based on Multiferroic BiFeO3

Xianyue Zhao, Stephan Menzel, Ilia Polian, Heidemarie Schmidt and Nan Du

Nanomaterials, 2023, 13, 1325
DOI: 10.3390/nano13081325

Temperature-dependent dielectric properties of CsPb2Br5: a 2D inorganic halide perovskite

Aditi Sahoo, Tufan Paul, Soumen Maiti and Rupak Banerjee

Nanotechnology, 2022, 33, 195703
DOI: 10.1088/1361-6528/ac4fe5

Fluorinated 2D Ruddlesden–Popper Perovskite-Based Flexible Memristor for Neuromorphic Application

Koushik Gayen, Sayandeep Guha and Suman Kalyan Pal

ACS Appl. Electron. Mater., 2025, 7, 10341
DOI: 10.1021/acsaelm.5c01807

Flexible, biocompatible, and biodegradable memristive materials and devices for neuromorphic computing

Kiran A Nirmal, Amitkumar R Patil, Pradnya P Patil, Atul C Khot, Tukaram D Dongale and Tae Geun Kim

Int. J. Extrem. Manuf., 2026, 8, 042007
DOI: 10.1088/2631-7990/ae542d

Photoelectrochemically Induced CO2 Reduction Using Halide-Tunable Lead-Free Perovskites

Manoj Singh, Jatin Nama, Tufan Paul, Nisha Hiralal Makani, Aditi Sahoo, Sudhanshu Sharma and Rupak Banerjee

ACS Appl. Energy Mater., 2023, 6, 3566
DOI: 10.1021/acsaem.3c00053

Advances in flexible perovskite memristors for neuromorphic electronics

Shuanglong Wang, Aqiang Liu, Hao Wu, Jiangnan Xia, Yongge Yang, Hong Lian and Huān Bì

Mater. Futures, 2026, 5, 012701
DOI: 10.1088/2752-5724/ae18e9

Oxide Passivation of Halide Perovskite Resistive Memory Device: A Strategy for Overcoming Endurance Problem

SangMyeong Lee, Won Bin Kim, Jae Myeong Lee, Hee Jung Kim, Jin Hyuk Choi and Hyun Suk Jung

ACS Appl. Mater. Interfaces, 2021, 13, 44577
DOI: 10.1021/acsami.1c13210

Tunable Volatile to Non‐Volatile Resistive Switching in PbZrO3 Antiferroelectric Thin Film for Neuromorphic Computing

Zonglin Lv, Hongwei Wang, Jinpeng Cao, Chao Zhang, Gaolei Zhao, Richeng Yu, Bo Zhang, Xiaoguang Xu, Yong Jiang and Jun Miao

Adv Materials Inter, 2022, 9
DOI: 10.1002/admi.202201005

Neuromorphic optoelectronic devices based on metal halide perovskite

Qiang Liu, Yiming Yuan, Junchi Liu, Wenbo Wang, Jiaxin Chen and Wentao Xu

Materials Today Electronics, 2024, 8, 100099
DOI: 10.1016/j.mtelec.2024.100099

Recent Advances in Halide Perovskite Resistive Switching Memory Devices: A Transformation from Lead-Based to Lead-Free Perovskites

Gregory Soon How Thien, Marlinda Ab Rahman, Boon Kar Yap, Nadia Mei Lin Tan, Zhicai He, Pei-Ling Low, Nisha Kumari Devaraj, Ahmad Farimin Ahmad Osman, Yew-Keong Sin and Kah-Yoong Chan

ACS Omega, 2022, 7, 39472
DOI: 10.1021/acsomega.2c03206

Wide‐Bandgap Perovskite‐Inspired Materials: Defect‐Driven Challenges for High‐Performance Optoelectronics

G. Krishnamurthy Grandhi, David Hardy, Mokurala Krishnaiah, Brenda Vargas, Basheer Al‐Anesi, Mahesh P. Suryawanshi, Diego Solis‐Ibarra, Feng Gao, Robert L. Z. Hoye and Paola Vivo

Adv Funct Materials, 2024, 34
DOI: 10.1002/adfm.202307441

Adaptive immunomorphic hardware based on organic semiconductors and oxidized MXene heterostructures for feature information recognition

Changsong Gao, Rengjian Yu, Enlong Li, Caixia Zhang, Yi Zou, Huipeng Chen, Zhixian Lin and Tailiang Guo

Cell Reports Physical Science, 2022, 3, 100930
DOI: 10.1016/j.xcrp.2022.100930

7‐Methylquinolinium Iodobismuthate Memristor: Exploring Plasticity and Memristive Properties for Digit Classification in Physical Reservoir Computing

Gisya Abdi, Ahmet Karacali, Alif Syafiq Kamarol Zaman, Marlena Gryl, Andrzej Sławek, Aleksandra Szkudlarek, Hirofumi Tanaka and Konrad Szaciłowski

Adv Elect Materials, 2025, 11
DOI: 10.1002/aelm.202500049

Flexible Memristor Based on Lead‐Free Cs2AgBiBr6 Perovskite for Artificial Nociceptors and Information Security

Jie Tang, Xiaoxin Pan, Xiang Chen, Bowen Jiang, Xiaoqing Li, Jie Pan, Haohan Qu, Zhijia Huang, Peixiong Wang, Jinxia Duan, Guokun Ma, Houzhao Wan, Li Tao, Jun Zhang and Hao Wang

Adv Funct Materials, 2025, 35
DOI: 10.1002/adfm.202412375

Revealing the Effect of Substantial A Site Cation Multiplicity in Lead-Free Double Perovskites for Memristor-Based Synaptic Devices

Suvankar Poddar, Suvankar Mondal, Souvik Bhattacharjee, Pranab Kumar Sarkar, Bikram Kumar Das and Kalyan Kumar Chattopadhyay

ACS Appl. Mater. Interfaces, 2025, 17, 29884
DOI: 10.1021/acsami.5c03940

The Role of Polymers in Halide Perovskite Resistive Switching Devices

Gregory Soon How Thien, Kah-Yoong Chan and Ab Rahman Marlinda

Polymers, 2023, 15, 1067
DOI: 10.3390/polym15051067

Flexible and Stretchable Memristive Arrays for in-Memory Computing

Xusheng Liu, Jie Cao, Jie Qiu, Xumeng Zhang, Ming Wang and Qi Liu

Front. Nanotechnol., 2022, 3
DOI: 10.3389/fnano.2021.821687

Two-dimensional layered CsPb2Br5 perovskite as high-performance electrode material for supercapacitor application

Kausik Sardar, Tufan Paul, Soumen Maiti, Subhasish Thakur, Aditi Sahoo, Gautam Majumdar and Kalyan Kumar Chattopadhyay

MRS Communications, 2023, 13, 1131
DOI: 10.1557/s43579-023-00403-9

Advancements in flexible memristors for neuromorphic computing: Materials, mechanisms, and applications in synaptic emulation

Weiwei Li, Chunbo Duan, Ying Wei and Hui Xu

FlexMat, 2025, 2, 390
DOI: 10.1002/flm2.70012

Chloride Ion Vacancy-Mediated Multilevel Bipolar Resistive Switching in Lead-Free All-Inorganic Halide Perovskite Thin Films

Chinmayee Mandar Mhaskar, Sangeeta Roy Chaudhuri and Ayan Roy Chaudhuri

ACS Appl. Mater. Interfaces, 2025, 17, 55054
DOI: 10.1021/acsami.5c12762

Resistive Switching Properties in Copper Oxide–Graphene Oxide Nanocomposite-Based Devices for Flexible Electronic Applications

Nikita Ghosh, Abubakkar Siddik, Pranab Kumar Sarkar and Prabir Kumar Haldar

J. Electron. Mater., 2024, 53, 432
DOI: 10.1007/s11664-023-10767-2

Synergy of 3D and 2D Perovskites for Durable, Efficient Solar Cells and Beyond

Isaac Metcalf, Siraj Sidhik, Hao Zhang, Ayush Agrawal, Jessica Persaud, Jin Hou, Jacky Even and Aditya D. Mohite

Chem. Rev., 2023, 123, 9565
DOI: 10.1021/acs.chemrev.3c00214

Ion dynamics in metal halide perovskites for resistive-switching memory and neuromorphic memristors

Sumin Lee, Jeonghyeon Son and Beomjin Jeong

Materials Today Electronics, 2024, 9, 100114
DOI: 10.1016/j.mtelec.2024.100114

Perspectives on halide perovskite-based in-memory and neuromorphic computing devices

Chang Woo Sun, Seong Jun Hong, Yu Gyeong Kum, Da Won Kim, Hyojung Kim and Seok Joo Yang

J. Korean Ceram. Soc., 2026
DOI: 10.1007/s43207-026-00593-7

Cutting-Edge Advances in Perovskite Photovoltaic Devices and Applications

SangMyeong Lee and Hyun Suk Jung

Korean J. Chem. Eng., 2024, 41, 3703
DOI: 10.1007/s11814-024-00319-7

Lead‐free inorganic halide perovskite‐based synaptic memory for next generation neuromorphic computing

Subhasish Chanda, Deepak Kumar, Iman Biswas, Manisha Sharma, Youngmin Lee, Sejoon Lee, Sanjeev Kumar Sharma and Aniruddha Mondal

InfoMat, 2026
DOI: 10.1002/inf2.70131

Assessing the Drawbacks and Benefits of Ion Migration in Lead Halide Perovskites

Kostiantyn Sakhatskyi, Rohit Abraham John, Antonio Guerrero, Sergey Tsarev, Sebastian Sabisch, Tisita Das, Gebhard J. Matt, Sergii Yakunin, Ihor Cherniukh, Martin Kotyrba, Yuliia Berezovska, Maryna I. Bodnarchuk, Sudip Chakraborty, Juan Bisquert and Maksym V. Kovalenko

ACS Energy Lett., 2022, 7, 3401
DOI: 10.1021/acsenergylett.2c01663

Voltage modulated long-term plasticity in perovskite heterostructured memristive synaptic devices with high-performance neuromorphic computing

Jianxing Zhang, Hangfei Li, Tao Liu, Shijie Dong, Sheng Xu, Hailian Li and Jie Su

Journal of Applied Physics, 2023, 133
DOI: 10.1063/5.0133146

Resistive Switching Behavior in Lead-Free Double Perovskite Cs2SnCl6 for Multilevel Flexible Device Application

Siming Tian, Shuo Cao, Junjie Feng, Yuchan Wang, Wenxia Zhang, Xiaosheng Tang, Wei Hu, Ting Liu and Nan Zhang

J. Phys. Chem. C, 2026, 130, 1791
DOI: 10.1021/acs.jpcc.5c08325

Biomimetic halide perovskite synapses for neuromorphic computing

Zhongwen Sun, Xuan Zhao, Haonan Si, Qingliang Liao and Yue Zhang

eScience, 2026, 100558
DOI: 10.1016/j.esci.2026.100558

Halide Perovskites for Resistive Switching Memory

Kaijin Kang, Wei Hu and Xiaosheng Tang

J. Phys. Chem. Lett., 2021, 12, 11673
DOI: 10.1021/acs.jpclett.1c03408

High Ionic Conduction and Polarity-Induced Piezoresponse in Layered Bimetallic Rb4Ag2BiBr9 Single Crystals

Manoj Singh, Tufan Paul, Pulak Pal, Aditi Sahoo, Lokesh Singh Tanwar, Nisha Hiralal Makani, Aswini Ghosh and Rupak Banerjee

J. Phys. Chem. C, 2022, 126, 21810
DOI: 10.1021/acs.jpcc.2c06844

Synapses based on lead-free perovskite in artificial intelligence

Shijie Liu, Zhenpeng Cheng, Ming-Yu Li, Sisi Liu, Haifei Lu, Xiaoyan Wen, Cong Wang, Xumin Ding and Lei Wang

Matter, 2024, 7, 2810
DOI: 10.1016/j.matt.2024.05.001