Open Access Article
Yoan
Hidalgo-Rosa
ab,
Yoslainy
Echevarria-Valdés
c,
Mario
Saavedra-Torres
d,
Dayán
Páez-Hernández
ce,
Eduardo
Schott
*f and
Ximena
Zarate
*d
aCentro de Nanotecnología Aplicada, Facultad de Ciencias, Ingeniería y Tecnología, Universidad Mayor, Camino La Pirámide 5750, Huechuraba, Santiago, Chile. E-mail: yoanhrj@gmail.com
bEscuela de Ingeniería del Medio Ambiente y Sustentabilidad, Facultad de Ciencias, Ingeniería y Tecnología, Universidad Mayor, Camino La Pirámide 5750, Huechuraba, 8580745 Santiago, Chile
cDoctorado en Fisicoquímica Molecular, Facultad de Ciencias Exactas, Universidad Andrés Bello, República 275, Santiago 8370146, Chile
dInstituto de Ciencias Aplicadas, Facultad de Ingeniería, Universidad Autónoma de Chile, Av. Pedro de Valdivia 425, Santiago, Chile. E-mail: ximena.zarate@uautonoma.cl
eCenter of Applied Nanosciences (CANS), Universidad Andres Bello, Ave. República #275, 8370146 Santiago de Chile, Chile
fDepartamento de Química Inorgánica, Facultad de Química y de Farmacia, Centro de Energía UC, Centro de Investigación en Nanotecnología y Materiales Avanzados CIEN-UC, Pontificia Universidad Católica de Chile, Vicuña Mackenna 4860, Macul, 7820436 Santiago, Chile. E-mail: maschotte@gmail.com; edschott@uc.cl
First published on 19th March 2025
Lanthanide(III) ions can be incorporated into metal–organic frameworks (MOFs) to form Ln@MOFs through post-synthetic procedures. This makes the MOFs efficient luminescent chemical sensors for detecting trace amounts of heavy metals. In this report, a quantum chemical theoretical protocol has been carried out to elucidate the detection principle of the turn-off luminescence mechanism in a Eu@UiO-66(DPA)-type MOF selective to Hg2+ ions. UiO-66(DPA) is an iso-reticular MOF of UiO-66 constructed from the Zr6-cluster [Zr6(μ3-O)4(μ3-OH)4]12+ and the ligands 1,4-benzenedicarboxylate (BDC) and 2,6-pyridinedicarboxylate (DPA) as linkers. The sensitization and energy transfer (ET) in UiO-66(DPA) doped with Eu3+ were analyzed using multireference ab initio CASSCF/NEVPT2 methods and time-dependent density functional theory (TD-DFT). The cluster model used in the calculations comprises the Z6-cluster/BDC/DPA fragments with the DPA ligand coordinating to Eu3+ or Hg2+ ions. The proposed sensitization pathway involves intersystem crossing from S1(DPA) to T1(DPA), a plausible subsequent energy transfer from T1(DPA) to the 5D1 state of Eu3+, and then vibrational relaxation to the emissive 5D0 state. These results also suggest that the electronic states of the BDC ligand can be strengthened by the population of the T1 electronic states of the DPA antenna via ET. Periodic DFT calculations confirm the electronic state mixture of BDC and DPA linkers in the conduction bands, just above the electronic state of Eu3+ ions, which is in concordance with the proposed Eu3+ sensitization pathways. The assessed optical properties (absorption and emission) of Hg2+@UIO-66(DPA) explain the experimental behavior of this chemosensor when the Hg2+ ion replaces the Eu3+ ion and the luminescence diminishes.
Optical sensors can be based on various principles, including absorbance, transmittance, polarization of light or refractive index.7 Advances in chemical detection technologies have allowed for more sensitive and selective detection of metal ions, even at trace levels.8 This has enabled researchers and environmental agencies to better understand metal ion distribution, sources, and potential health risks. Furthermore, developing portable chemical detection devices has significantly enhanced on-site monitoring and rapid screening of metal ion contamination.9 In 2020, Yuxiu Xiao et al. reported an analytical device based on a one-to-two logic gate utilizing a Eu-MOF. They designed a Eu-MOF-loaded fiber paper microsensor for the rapid detection of water in solid pharmaceuticals using ratiometric sensing and a portable visual device.10 Building on this advancement, the integration of metal–organic frameworks (MOFs) with smartphone technology has further unlocked new possibilities for real-time, on-site chemical detection.11–13 Lanthanide-based MOFs (Ln-MOFs) have shown exceptional promise for visual detection applications through smartphone-assisted systems,13–15 leveraging their distinctive luminescence properties to enhance sensitivity and enable accurate quantification via straightforward and interpretable colorimetric or luminescence changes.11,14
In this regard, luminescent metal–organic frameworks (L-MOFs) are promising alternatives in the development of chemosensors.16 These materials are composed of metal ions or clusters (nodes) connected by organic ligands (linkers), generating two-dimensional or three-dimensional structures.17 The combination of these metallic and organic building components (nodes and linkers) in L-MOFs leads to the appearance of unique luminescence properties. The hybrid nature of their components enables a wide range of photophysical processes that govern their luminescence properties.18 Metal-to-ligand charge transfer (MLCT), ligand-to-metal charge transfer (LMCT), ligand-to-ligand charge transfer (LLCT), metal localized emission and ligand-centered emission are some of the involved mechanisms.19 These materials exhibit luminescence changes in the presence of specific analytes, allowing the detection and recognition of target substances.20 Other features of MOFs that make them stand out as optical chemosensors are related to their tunable structures, high surface areas, and easy functionalization post-synthesis.21,22 These properties make L-MOFs highly useful in fields such as environmental monitoring,23 biomedical research,24 and industrial applications.25 Therefore, by understanding and tuning the luminescence changes in L-MOFs, researchers would be able to design highly sensitive and selective chemosensors for a wide range of analytes.26
In this sense, linkers can be designed or functionalized by post-synthetic modifications (PSM) to exhibit specific properties, such as desirable optical properties, and/or induce certain chemosensor–analyte interactions.27 A powerful PSM strategy is to include lanthanide ions (Ln3+) into MOF hosts to activate the emission properties of the material and generate new emission signals that are lanthanide ion-centered.28 The sharp line emissions, high color purity, high luminescence quantum yield, and large Stokes shifts, attributed to the 4f–4f transitions and relativistic effects of Ln ions, might undergo improvements in co-doped MOFs.29 Their luminescence arises from a sensitization process carried out via energy transfer (ET) from a suitable organic ligand to the Ln3+ ions, which is called the “antenna effect”. Thus, a careful selection and design of the linkers and nodes might tune the emission properties of L-MOFs. This makes L-MOFs promising materials for the development of efficient and sensitive chemosensors.30–32 Due to their structural and optical properties, L-MOFs functionalized with Ln3+ ions have been used to detect metal ions.33,34 Mechanisms such as energy transfer from the ligand to the Ln3+ center and metal–ligand charge transfer are well accepted in a detection process to explain the change in the optical properties of functionalized L-MOFs.34,35 Several studies indicate that the quenching effect is not completely clear in all cases. In this context, a recent systematic literature review by Shuangyan Wu (2024)36 concluded that the principles underlying the current sensing mechanisms are unclear and limited to qualitative analysis. However, much research has been descriptive and based only on experimental data. Some works have successfully applied DFT-based methods to elucidate potential photophysical processes that induce luminescence alteration in Ln3+ co-doped L-MOFs.37–39 However, in Ln3+-based systems, a more sophisticated level of theory is required to accurately address the multireference character arising from the various low-lying states associated with the 4fn configurations.40 Predicting the correlation between the L-MOF structure and analyte-induced luminescence changes is challenging due to the large size of MOFs. However, advancements in computational chemistry have enabled accurate descriptions of their molecular and electronic properties.26,41–46 This report presents a computational protocol designed to understand the luminescence properties and sensing mechanisms of Ln3+ co-doped L-MOFs (Ln3+@L-MOFs). A comprehensive study was conducted, focusing on molecular and electronic properties, including the relative energies of the ground and excited states (S1 or T1), as well as the electronic band structures of the L-MOFs. Our theoretical protocol integrates periodic DFT, molecular DFT, and multireference calculations to provide a detailed assessment of the luminescence properties and sensing mechanism.26,43–45
Theoretical studies of Ln3+@L-MOF chemosensors, due to their computational complexity, numerous electrons and electron correlation effects, need high-performance computation resources. These studies are crucial in the investigation of Ln3+@L-MOFs, offering in-depth knowledge of the principles underlying detection events toward a target analyte, thereby influencing experimental work and aiding in creating new chemosensors of the Ln3+@L-MOF type.
Hence, to enhance the understanding and contribute to the knowledge, in the work reported herein, a theoretical procedure is proposed. In this theoretical procedure, multiconfigurational ab initio methods, along with molecular density functional theory (DFT), and periodic DFT calculations were combined. This approach aims to accurately determine the sensitization and emission channels for the previously experimentally reported UiO-66 MOFs47 doped with a Eu3+ selective chemical sensor to detect Hg2+in situ as well as, to the best of our knowledge, the sensing mechanism for the first time.
This MOF holds the Eu3+ atom in a free –COOH group (Eu@UiO-66(DPA)) and it is used to detect very low Hg2+ levels (lower than 10 nM, which is the maximum level of Hg2+ in drinking water according to the U.S. Environmental Protection Agency48). It is proposed that the detection mechanism is via the replacement of the Eu3+ atom by the Hg2+ atom due to the higher affinity of DPA toward Hg2+. This substitution induces the blocking of the Eu3+ antenna effect inducing then the chelation enhancement quenching (CHEQ) effect (Fig. 1).
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| Fig. 1 A simplified scheme showing the detection mechanism via the replacement of Eu3+ by Hg2+, inducing the blocking of the antenna effect of Eu3+ and then producing the CHEQ effect. | ||
One of the most intriguing features of MOFs is their ability to fine-tune optical properties through slight structural modifications. These modifications can include the incorporation of functional groups50 or metal ions51 or be induced by the analyte,52 which involved a significant change in the optical properties of MOFs. The photophysical processes that dictate the optical behaviors of a luminescent sensor are intrinsically associated with electronic interactions between the sensor and the analyte.53 The density of states (DOS) method has been widely utilized to investigate the electronic structure and optical properties of MOF-based chemical sensors.52–57 DOS plots provide crucial insights into the nature of charge transport, helping to determine whether it occurs through ligand-to-ligand, metal-to-ligand, ligand-to-metal, or metal-to-metal processes involving the photophysical properties of materials.41,58 This analysis offers a straightforward approach for representing complex electronic structures while also providing valuable insights into the optical properties of materials.59 This method has been previously employed to gain insights into the photophysical processes associated with optical properties related to charge transfer and energy transfer mechanisms,60 such as ligand–ligand charge transfer (LLCT),61 metal-to-ligand charge transfer (MLCT),57 ligand-to-metal charge transfer (LMCT),62 and photoinduced electron transfer (PET).57 Additionally, it provides a detailed view of the atomic contributions to the occupied and unoccupied electronic states.60,61,63,64 Thus, DOS analysis was employed to further investigate the changes in the luminescence properties of the UiO-66(DPA) chemosensor induced by Eu3+ and Hg2+ ions, focusing on the structures Eu@UiO-66(DPA) and Hg@UiO-66(DPA).
On the other hand, to study the efficiency of Ln sensitization and emission in a MOF, the main processes involved must be considered. This process starts from the excitation of the linker with the final population of its first excited singlet state (S1) after no radiative processes followed by an intersystem crossing (ISC) between S1 and the first excited triplet state (T1) of the linker [linker (S1 → T1)]. Finally, there occurs an energy transfer process that populates the emissive state of the lanthanide ion [linker (T1) → Ln3+] from which emission occurs.26
Thus, to elucidate the origin of the sensitization and emission pathways and the sensing mechanism in Ln3+@L-MOF chemosensors, a detailed understanding of the electronic structure of the system and the effect of the presence of the analyte of interest must be obtained. This implies predicting the correct localization of the electronic state of the lanthanide ions and antenna both in the ground state and excited states.40 Advanced computational methods have been developed that enable a more in-depth examination of the electronic structure and excited states related to photophysical processes that govern luminescence properties.
Due to the intrinsic properties of heavy elements, such as lanthanides, their theoretical treatment requires meticulous evaluation.26,65 Three primary factors must be considered: (i) relativistic effects, including scalar relativistic contributions and spin–orbit coupling, (ii) electronic correlation, and (iii) the influence of the ligand field.66 In the case of lanthanides, spin–orbit interactions and electron correlation effects play a dominant role and must be explicitly accounted for in theoretical calculations. Notably, the quasi-degenerate nature of electronic configurations arising from the 4fn shell introduces significant static correlation, which is essential for accurately determining the energetic positions of both ground and excited states.40,67
One of the most important methods is the multi-configuration self-consistent field (MCSCF), which is employed to study the electronic structure of lanthanide ions.68 Therefore, our attention has been directed towards accomplishing a theoretical protocol to clarify the emission channels and understand the sensing mechanism in luminescent UiO-66(DPA) sensors using a cluster model. In the ESI,† we present a detailed description of structural models used for modeling these systems, both as extended solids and cluster models. Moreover, the computational methods are described in detail, such as software packages, theory levels, and theoretical approaches used for each of the calculations.
For UiO-66(Zr) MOFs, it has been documented that their optical properties are governed by electronic transitions involving both non-functionalized BDC linkers and substituted BDC linkers. Matsuoka et al.69 demonstrated that the organic linker in NH2-UiO-66(Zr) absorbs light, as shown by in situ electron paramagnetic resonance (EPR) measurements conducted before and after exposure to visible light. The EPR measurements revealed no characteristic signals attributable to Zr3+ species after visible-light exposure, indicating that LMCT does not occur in this system. Jorge Gascon et al. reached a similar conclusion while investigating the electronic properties of NH2-UiO-66(Zr) and NH2-UiO-66(Hf) MOFs using DFT and EPR techniques. They emphasized that there is no evidence for the formation of M3+ species, such as Zr3+ or Hf3+ in the excited state.70 On the other hand, previous theoretical studies reported the electronic structure of the UiO-66(Zr), UiO-66(Hf) and UiO-(Th) MOFs via density of states (DOS) and projected DOS (PDOS) plots. In these previous studies, the contributions of ligand states near the conduction band minimum (CBM) and valence band maximum (VBM) were also shown.62,71 Accordingly, to gain deeper insights into the emission pathway of the sensing mechanism, the PDOSs of both the Eu3+@UiO-66(DPA) and Hg2+@UiO-66(DPA) systems were analyzed.
PDOS analysis by fragments is shown in Fig. 2. BDC fragments are predominantly present in the occupied range, particularly in the valence zone with higher contribution states between −7 and −1.8 eV (purple), while DPA (blue) and Zr6O4(OH)4 (red) are also present but with a small number of states. However, the Eu state emerged with a lone but highly populated band closer to the Fermi level at −0.1 eV. The lowest energy conduction band is populated almost entirely by Eu states (green curve) at 1.1 eV, and only with small contributions by the DPA linker at this energy level. Thus, doping UiO-66(DPA) with Eu3+ introduces 4f states that are sufficiently low in energy to fall below the electronic states of the BDC and DPA linkers. The rest of the fragments contribute above ∼1.1 eV, mainly DPA (between 1.1 and 2.2 eV) and BDC (mostly between 1.5 and 2 eV). The overlap between the electronic states of the DPA and BDC linkers next to Eu3+ (1.5 to 2.2 eV) suggests that both ligands are involved in the sensitization and emission pathways of the Eu3+@UiO-66(DPA) MOF.
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| Fig. 2 (a) Structure of Eu3+@UiO-66(DPA) identifying fragments: Zr6O4(OH)4 (red), BDC (violet), DPA (blue), and Eu (green). (b) PDOS by fragments. | ||
PDOS results obtained by elemental and orbital analyses presented in Fig. 3 are in agreement with the by-fragment results. It is observed that the valence band located closer to the Fermi level is populated mainly by Eu(f), followed by O(p) and C(p) between −2 and −7 eV, assigned previously to the BDC and Zr6O4(OH)4 fragments. However, O(p) mostly contributes at lower energy levels under −2 eV, attributed to the O atoms present on the Zr6O4(OH)4 and BDC/DPA terminal groups. The conduction band is also populated by Eu(f) at 1 eV, followed by C(p) from BDC and DPA, particularly between 1 and 2.2 eV. Over this range, Zr6O4(OH)4 shows an increase in the number of unoccupied states, through Zr(d), with Eu(d) and the rest of the elements showing values over 4 eV.
Eu3+@UiO-66(DPA) exhibits alterations in the luminescence intensity after the introduction of various ions, with a particularly pronounced effect observed in the presence of Hg2+ ions. Experimental data suggest that the quenching mechanism may involve the substitution of Eu3+ by Hg2+ within the Eu3+@UiO-66(DPA) structure. This substitution leads to a reduction in the material luminescence.47 To get a deeper understanding of the sensing mechanism, PDOS analysis of Hg2+@UiO-66(DPA) was also performed.
PDOS by-fragment results (Fig. 4) show that at the Fermi level, the BDC fragments would have a relevant role with their occupied states in the valence zone around −2.0 eV (purple). Also, DPA (blue) is the fragment that maintains direct interactions with the Hg atom and this atom does not show a relevant contribution in this region. The BDC fragment also shows some contributions at around −1.8 and −2.5 eV, sharing the same energy range with the Zr6O4(OH)4 and DPA fragments. However, the Zr6O4(OH)4 and DPA fragments show much smaller contributions than BDC. On the other hand, at low energy levels, the conduction band is composed of a Hg atom (1.5 eV) and followed by the DPA fragment. Around this range, the DPA and BDC fragments maintain a relevant contribution up to 2.5 eV, especially the BDC fragment shows an important contribution between 1.8 and 2.5 eV. Over 3 eV, the Zr6O4(OH)4 and BDC fragments share their contributions to the PDOS, followed by the contribution of the DPA fragment with an overlap at larger energy values.
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| Fig. 4 (a) Structure of Hg2+@UiO-66(DPA) identifying fragments: Zr6O4(OH)4 (red), BDC (violet), DPA (blue), and Hg (brown). (b) PDOS by fragments. | ||
The PDOS obtained by elemental and shell analyses matches these results (Fig. 5), where the valence band is composed mainly of C(p) followed by O(p) at −2 eV. The O(p) contribution increases at lower energy levels assigned to the Zr6O4(OH)4 and BDC/DPA fragments. On the other hand, the conduction band is composed of C(p) and Hg(s) orbitals at ∼1.8 eV. Moreover, C(p) and O(p) unoccupied state contributions are present between the 1.8 and 2.5 eV energy range. Finally, over the 3 eV energy range, Zr(d) and H(s) contribute to those states.
The electronic states introduced by the Hg atoms and the DPA linkers generate unoccupied states at the conduction band edge, leading to the formation of a non-emissive excited state. According to our analysis, the Hg2+ and DPA composition of the conduction band edge in the Hg2+@UiO-66(DPA) system contributes to generate a ‘dark’ excited state after excitation and subsequent non-radiative deactivation. This ‘dark’ excited state leads to a turn-off in the luminescence process. This result is consistent with the experimental turn-off luminescence sensing mechanism of Eu3+@UiO-66(DPA) in the presence of Hg2+ ions.
Finally, for Eu3+@UiO-66(DPA) and Hg2+@UiO-66(DPA), the highest occupied levels are constituted by Eu3+ and DPA/BDC linkers, respectively. In particular, for Hg2+@UiO-66(DPA), the C(p) orbitals have an important contribution, i.e. the phenyl groups. On the other hand, both metals contribute primarily at low energy unoccupied levels of the conduction band. Specifically, the most notable orbital contribution of Eu has an energy of 1.1 eV, while for Hg2+@UiO-66(DPA), the same region of the conduction band is composed of Hg and DPA states (Fig. 4b). This difference in composition would lead to expected energy transfer channels from the BDC fragments to the metals (Eu3+ or Hg2+) and the DPA fragment. This charge transfer is particularly more favorable in the case of Eu2+@UiO-66(DPA) than in the case of Hg2+@UiO-66(DPA), which could be explained by the lower band gap in the electronic structure of the material with the lanthanide.
600 cm−1 and 20
174 cm−1, respectively. Our results align with previous reports, which showed 5D0 and 5D1 values of 17
830 and 19
450 cm−1 respectively, based on CASSCF/XMCQDPT2/SO-CASSCF calculations.72 This is also consistent with the previously reported experimental values of 17
300 and 19
000 cm−1 for 5D0 and 5D1 of the Eu3+ion.73 The electronic structures of the BDC and DPA linkers, including the ground state (S0) and excited states (Sn and Tn), were investigated using the CAS(10,10)SCF/NEVPT2 method with an active space of ten electrons in ten molecular orbitals
According to the CAS(10,10)SCF/NEVPT2 calculations for the DPA linker, the S1 electronic state is located at 31
194 cm−1, whereas the T1 electronic state appears at 23
828 cm−1. Therefore, the energy gap (S1–T1) is 7366 cm−1 which is not within the optimal range according to the Reinhoudt rule. Following this empirical rule (Reinhoudt rule), the energy gap between the S1 and T1 electronic states must be 5000 cm−1 to ensure an efficient inter-system crossing (ISC) S1 → T1.74 The CAS(10,10)SCF/NEVPT2 calculations showed that the S1 and T1 electronic states of the BDC linker are located at 27
794 and 26
558 cm−1, respectively. Thus, the energy gap (S1–T1) is 1236 cm−1.
In this regard, for both ligands (BDC and DPA), the S1–T1 energy difference calculated at the CAS(10,10)SCF/NEVPT2 level of theory shows that the ISC process is totally efficient, according to the empirical rule. However, for UiO-66(DPA), it has been reported that after the PSM with Eu3+ (generating Eu3+@UiO-66(DPA)), a characteristic emission peak assigned to the Eu3+ ions appears. This suggests that the population of the T1 electronic state of the antenna and its subsequent energy transfer pathway may take another route from the commonly observed mechanism. We support this hypothesis with two arguments. First, the periodic DFT calculations indicate that the conduction band (CB) consists of a mixture of electronic states from BDC and DPA linkers just above the electronic state associated with Eu3+ ions. Second, the strong spin–orbit coupling (SOC) effect of Eu3+ ions in this material induces a mixture of electronic states with different multiplicities.
According to the Latva rule, an energy gap between 2500 and 4000 cm−1 can facilitate efficient energy transfer from the T1 electronic state of the antenna to a resonance excited level of Ln3+ ions. This energy gap is adequate for an efficient ET channel when ΔE (T → Ln*), according to the Latva rule. A posterior analysis of CASSCF/NEVPT2 calculations showed that the T1 electronic state of the DPA antenna is located 6224 cm−1 higher in energy than the Eu3+ ion 5D0 state (17
600 cm−1). The T1(DPA) electronic state is located 3554 cm−1 higher than the 5D1 electronic state (20
174 cm−1) of the Eu3+ ion. The T1 electronic state of the BDC linker is located at 8988 and 6384 cm−1 higher than the 5D0 and 5D1 electronic states of the Eu3+ ion. Based on these results, it can be considered that an energy transfer from the T1 electronic state of the BDC or DPA linker to the emissive electronic state of 5D0 Eu ions has a low probability of occurring. Thus, the most important argument is that the most probable sensitization pathway involves the ISC process of DPA (S1 → T1), followed by an energy transfer channel that is activated from the T1 electronic state of the DPA linker to the 5D1 electronic state of Eu3+ ions, T1 (DPA) → 5D1 (Eu3+). Then, a vibrational relaxation (VR) from 5D1 can result in the emissive 5D0 state, 5D1 → 5D0 (Eu3+). Additionally, the excited electronic states of the BDC antenna could enhance the population of the DPA antenna T1 electronic states through the ET process, as shown in Fig. 6. Finally, the radiative deactivation from 5D0 electronic states to the Eu3+ 7FJ electronic states is produced (see Fig. 6).
A more detailed analysis of the excited electronic states was carried out. Table S2† lists the active orbitals, occupation numbers and low-lying excited electronic state configurations computed for the BDC antenna. As it is possible to appreciate, the S1 electronic state has 50% contribution of a configuration with 1(π → π*) character and 38% contribution of a configuration with 1(n → π*), whereas the T1 electronic state of this antenna has 78% contribution of a configuration with 3(π → π*) character. Thus, multireference characteristics of these excited electronic states, which show a large change in the orbital type, could favor the ISC process (S1(BDC) → T1(BDC)), according to the El-Sayed rule.75,76 However, in the case of the DPA antenna, as shown in Table S3,† the electronic configurations of the S1 and T1 electronic states do not indicate any change in the orbital type within the active space. The S1 electronic state has 50% contribution of a configuration with 1(π → π*) character and 20% contribution of a configuration with 1(π → π*), whereas the T1 electronic state of the DPA antenna has 78% contribution of a configuration also with 3(π → π*) character. Thus, according to El-Sayed's rule, the electronic configurations of S1 and T1 are more likely to result in a slow intersystem crossing (ISC) due to the absence of a change in the orbital type.
Finally, the radiative and non-radiative processes involved in sensitization and ET channels were analyzed based on their rate constants. In the case of the BDC linker, the ISC rate kISC (S1 → T1) = 6.00 × 109 s−1 is larger than the fluorescence rate (three orders of magnitude) of kF (S1 → S0) = 4.28 × 106 s−1. As can be seen in Fig. 6, the ISC pathway from the DPA linker has an ISC rate of kISC (S1 → T1) = 3.75 × 109 s−1, which is also three orders of magnitude greater than the fluorescence rate kF (S1 → S0) = 1.17 × 106 s−1. Thus, based on the rate constant of these photophysical processes for both linkers, it is likely that the population of the T1 electronic state occurs through an intersystem crossing (ISC) process before radiative decay. On the other hand, these calculations also reveal a slow phosphorescence (kP) rate for both linkers. As shown in Fig. 6, the DPA linker has a kP (T1 → S0) value of 2.07 × 103 s−1, while the BDC linker has a kP (T1 → S0) value of 4.43 × 103 s−1. Both linkers exhibit long-lived populations in their T1 electronic states, with nonradiative pathways such as ET to sensitize the Eu3+ ion. The LUMPAC software77 was used to compute the energy transfer rates (kET) and the back energy transfer rates (kBET). As illustrated in Fig. 6, ET rates kET that are within the order of 104–109 s−1 lead to a probable ET channel, both from the S1 and T1 electronic states. Although the T1 electronic state of the DPA antenna falls outside the energy range stipulated by Latva's rule, it still exhibits adequate energy transfer rates for T1 (DPA) → 5DJ(Eu3+). The kET(S1–5D1) = 3.47 × 105 s−1 and kET(S1–5D0) = 3.24 × 104 s−1 values are lower than the corresponding values for probable ET from the T1 electronic state, with kET(T1–5D1) = 1.27 × 109 s−1 and kET(T1–5D0) = 5.61 × 108 s−1. Furthermore, the analysis of kBET values indicates that the BET mechanism is not competitive in this system. The observed results support the proposed sensitization and emission mechanism between the DPA linker and the Eu3+ ion. The ET pathway from the ligand to the lanthanide dominates, as evidenced by the significantly lower and non-competitive BET rates: kBET(5D1–T1) = 2.86 × 10−3 s−1 and kBET(5D0–T1) = 3.09 × 10−7 s−1, both of which are too low to represent a predominant process. Likewise, the BET rates kBET(5D1–S1) = 7.27 × 10−21 s−1 and kBET(5D0–S1) = 1.08 × 10−25 s−1 confirm the negligible role of back transfer in this system.
To investigate the luminescence quenching pathway in the Hg2+@UiO-66(DPA) system, the S0 and S1 electronic states were studied in terms of energy and structure. According to the Franck–Condon principle and selection rules, we support the hypothesis that, upon photoexcitation, the electron relaxes until reaching the first excited electronic state, presumably involved with the Hg2+ ions. Thus, in the first step, the vertical excitation of the Hg2+@UiO-66(DPA) (based on cluster models) was computed. This absorption spectrum displays three main transitions regarding the f values, one at 250 nm, a more intense one at 258 nm, and the last one at 306 nm.
The bands centered at 306 nm (f = 0.02) correspond to π → π* electronic transitions from the HOMO to the LUMO+1, which are labeled as H and L+1 in Fig. 7. The MOs involved in this absorption band are localized at the bridging oxygen atoms of the [Zr6(OH)4O4] node and DPA linker; see the left panel in Fig. 7. The more intense bands are located at 258 nm (f = 1.02) and are composed of π → π* electronic transitions (HOMO−3 → LUMO+2). These electronic transitions exhibit an inter-ligand charge-transfer (ILCT) character. The MOs involved in this absorption band are mainly localized on the BDC linker. The band at 250 nm is associated with a π → π* electronic transition (HOMO−3 → LUMO+1), which also presents an ILCT character; see Fig. 7.
In the second step, the probable emissive S1 state of Hg2+@UiO-66(DPA) was explored. This step begins with the optimization of the S1 electronic state, which was subsequently used as input data to calculate the electronic transitions associated with the emission spectrum by means of TD-DFT methods. All electronic transitions that correspond to the absorption process involve the molecular orbital just above the LUMO (orbital located on the Hg atom). Thus, considering the Franck–Condon principle and selection rules, it is more likely that, after excitation, the electron relaxes until reaching the S1 electronic state located on the Hg atom. Therefore, radiative deactivation could arise from the S1 electronic state, following Kasha's rule. The radiative rate (krad) and radiative lifetime (τrad) computed for this electronic transition are in the range of fluorescence. As displayed in the right panel in Fig. 7, τrad and krad present values which are in fluorescence for all calculations (less than 10−6 seconds and 106 seconds−1, respectively).79 However, if the intensity of these electronic transitions based on the f magnitude (f = 0.002) is analyzed, the presence of Hg ions induces a “dark” excited state.
In summary, the most probable fluorescence quenching pathway of the Hg2+@UiO-66(DPA) system is supported by the hypothesis that after direct photoexcitation from the S0 electronic state, the electron relaxes to reach the first excited electronic state S1 located in the Hg2+ ion. For this reason, it is possible to state that the S1 electronic state decays to the S0 electronic state through a non-radiative mechanism.
Footnote |
| † Electronic supplementary information (ESI) available. See DOI: https://doi.org/10.1039/d4dt03285c |
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