Issue 37, 2017

Black phosphorus transistors with van der Waals-type electrical contacts

Abstract

Contact engineering is a possible solution to decrease the pervasive Schottky barrier in a two dimensional (2D) material transistor with bulk metal electrodes. In this paper, two kinds of typical van der Waals (vdW)-type electrical contacts (a 2D metal contact and a 2D material/bulk metal hybrid contact) in monolayer (ML) black phosphorus (BP) transistors are investigated by ab initio energy band calculations and quantum transport simulations. Compared with the traditional bulk metal Ni contact, the gate electrostatic control is significantly improved by using both 2D graphene and borophene electrodes featuring a decrease of 30–50% in the subthreshold swing and an increase by a factor of 4–7 in the on-state current due to the depressed metal induced gap states and reduced screening of the 2D metal electrodes to the gate. In contrast, graphene insertion between the Ni electrode and ML BP shows only a slight improvement in the gate electrostatic control ability and BN insertion shows almost no improvement. The higher efficiency using the 2D metal contact than the 2D material/bulk metal hybrid contact in improving the ML BP FET device performance also provides helpful guidance in the selection of vdW-type electrical contacts of other 2D transistors.

Graphical abstract: Black phosphorus transistors with van der Waals-type electrical contacts

Supplementary files

Article information

Article type
Paper
Submitted
03 جوٗن 2017
Accepted
21 اگست 2017
First published
22 اگست 2017

Nanoscale, 2017,9, 14047-14057

Black phosphorus transistors with van der Waals-type electrical contacts

R. Quhe, Y. Wang, M. Ye, Q. Zhang, J. Yang, P. Lu, M. Lei and J. Lu, Nanoscale, 2017, 9, 14047 DOI: 10.1039/C7NR03941G

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements