Transfer-free growth of wafer-level graphene via a Mo sacrificer

Abstract

This study presents a straightforward method to allow transfer-free graphene growth on SiO₂/Si substrates, with Mo serving as a sacrificial layer, which could be easily removed by simple air blowing. Such a route eliminates the need for chemical etching of metal catalysts. The resulting 2-inch graphene wafer shows electrical uniformity and minimal metal residue.