Issue 36, 2024

Ultrathin 2D IZO film transistors printed via liquid InZn alloys: insights into the oxidation behavior and enhanced mobility properties

Abstract

Two-dimensional (2D) InZnO (IZO) is a typical and potential transparent conductive oxide for next-generation flexible transparent electronic displays due to its high flexibility, transparency, and high mobility characteristics. In this study, a liquid metal printing method is proposed to prepare atomically thin 2D IZO with controllable composition. Unlike the oxidation process where In dominates the surface oxidation in the liquid In–Sn alloy, the surface oxidation process of the liquid In–Zn alloy is dominated by Zn. Furthermore, the oxidation behavior displays clear characteristics of both competitive and synergistic oxidation. This unique feature allows precise control of the ZnO content in 2D In2O3, with Zn content in the film adjustable from 4 at% to 82 at%. Additionally, despite the incorporation of Zn, the film maintains a visible light transmittance of over 99%. As the Zn content in the 2D IZO film increases, the current on/off ratio of the transistor initially decreases and then increases, reaching a maximum of 104, while the field-effect mobility consistently improves. After covering the 2D IZO back channel with 2D Ga2O3, a significant enhancement of field-effect mobility is further achieved due to the interface modulation. The findings of this study provide new insights into the oxidation behavior of indium-based liquid alloys and present a novel route for synthesizing 2D IZO thin-film semiconductor materials with varied compositions. This research offers valuable guidance for the development of advanced materials in the field of transparent electronics.

Graphical abstract: Ultrathin 2D IZO film transistors printed via liquid InZn alloys: insights into the oxidation behavior and enhanced mobility properties

Supplementary files

Article information

Article type
Paper
Submitted
05 جوٗن 2024
Accepted
10 اگست 2024
First published
12 اگست 2024

J. Mater. Chem. C, 2024,12, 14675-14684

Ultrathin 2D IZO film transistors printed via liquid InZn alloys: insights into the oxidation behavior and enhanced mobility properties

S. Ze, F. Li, J. Guo, C. Luo, T. Chen, Y. Tian, F. Liu, J. Li and B. Liu, J. Mater. Chem. C, 2024, 12, 14675 DOI: 10.1039/D4TC02312A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements