Issue 9, 2023

Strategies and applications of generating spin polarization in organic semiconductors

Abstract

The advent of spintronics has undoubtedly revolutionized data storage, processing, and sensing applications. Organic semiconductors (OSCs), characterized by long spin relaxation times (>μs) and abundant spin-dependent properties, have emerged as promising materials for advanced spintronic applications. To successfully implement spin-related functions in organic spintronic devices, the four fundamental processes of spin generation, transport, manipulation, and detection form the main building blocks and are commonly in demand. Thereinto, the effective generation of spin polarization in OSCs is a precondition, but in practice, this has not been an easy task. In this context, considerable efforts have been made on this topic, covering novel materials systems, spin-dependent theories, and device fabrication technologies. In this review, we underline recent advances in external spin injection and organic property-induced spin polarization, according to the distinction between the sources of spin polarization. We focused mainly on summarizing and discussing both the physical mechanism and representative research on spin generation in OSCs, especially for various spin injection methods, organic magnetic materials, the chiral-induced spin selectivity effect, and the spinterface effect. Finally, the challenges and prospects that allow this topic to continue to be dynamic were outlined.

Graphical abstract: Strategies and applications of generating spin polarization in organic semiconductors

Article information

Article type
Review Article
Submitted
17 مارٕچ 2023
Accepted
12 جوٗن 2023
First published
12 جوٗن 2023

Nanoscale Horiz., 2023,8, 1132-1154

Strategies and applications of generating spin polarization in organic semiconductors

K. Meng, L. Guo and X. Sun, Nanoscale Horiz., 2023, 8, 1132 DOI: 10.1039/D3NH00101F

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements